公开(公告)号：US09305969B2

公开(公告)日：2016-04-05

申请号：US13666098

申请日：2012-11-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Motohiro Suyama ,  Akiomi Ujima ,  Kentaro Maeta ,  Hisanori Suzuki ,  Masaharu Muramatsu ,  Fumio Iwase

IPC: G06M7/00 ,  H01L27/00 ,  H01L27/148 ,  H04N5/3722 ,  H04N3/14

CPC classification number: H01L27/14843 ,  H04N3/1525 ,  H04N3/1537 ,  H04N5/3722

Abstract: A solid-state imaging device 1A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns, N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the imaging plane 12, and N signal readout circuits 30 arranged on the other end side in the column direction for each of the columns with respect to the imaging plane 12, a semiconductor element 50 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 20 for each of the columns, and a semiconductor element 60 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 30 for each of the columns.

Abstract translation: 固态成像装置1A包括CCD型固体摄像元件10，其具有由M×N个像素形成的成像面12，二维排列成M行N列，N个信号读出电路20配置在一个 相对于成像面12的各列的列方向的端侧，以及相对于摄像面12对于列的列方向配置在另一端侧的N个信号读出电路30，半导体 元件50，用于数字转换，然后顺序地输出作为串行信号从每个列的信号读出电路20输出的电信号;以及半导体元件60，用于数字转换，然后顺序地输出作为串行信号从信号输出的电信号 每列的读出电路30。

公开(公告)号：US10811459B2

公开(公告)日：2020-10-20

申请号：US15505993

申请日：2015-08-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro Takagi ,  Kentaro Maeta ,  Yasuhito Yoneta ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H01L27/148 ,  H04N5/369 ,  H01L27/14 ,  H04N5/372 ,  H01L27/146

Abstract: A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.

公开(公告)号：US20200043974A1

公开(公告)日：2020-02-06

申请号：US16597124

申请日：2019-10-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki Kasuya ,  Takeshi Kawahara ,  Yasuhito Miyazaki ,  Kentaro Maeta ,  Hisanori Suzuki

IPC: H01L27/148 ,  H01L31/0236 ,  H01L31/103 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

公开(公告)号：US10529772B2

公开(公告)日：2020-01-07

申请号：US16081208

申请日：2017-03-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki Kasuya ,  Takeshi Kawahara ,  Yasuhito Miyazaki ,  Kentaro Maeta ,  Hisanori Suzuki

IPC: H01L31/0236 ,  H01L27/148 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

公开(公告)号：US10199418B2

公开(公告)日：2019-02-05

申请号：US14766336

申请日：2013-10-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kenichi Sugimoto ,  Hiroya Kobayashi ,  Kentaro Maeta ,  Masaharu Muramatsu

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/498

Abstract: A plurality of semiconductor photodetecting elements have a planar shape having a pair of first sides opposed to each other in a first direction and a pair of second sides being shorter than the pair of first sides and opposed to each other in a second direction perpendicular to the first direction, and are disposed on a base so as to be adjacent to each other in juxtaposition. A plurality of bump electrodes each are disposed on sides where the pair of first sides lie in each semiconductor photodetecting element, to electrically and mechanically connect the base to each semiconductor photodetecting element. A plurality of dummy bumps are disposed so that at least one dummy bump is disposed on each of sides where the pair of second sides lie in each semiconductor photodetecting element, to mechanically connect the base to each semiconductor photodetecting element.

公开(公告)号：US09054000B2

公开(公告)日：2015-06-09

申请号：US13666149

申请日：2012-11-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Motohiro Suyama ,  Akiomi Ujima ,  Kentaro Maeta ,  Hisanori Suzuki ,  Masaharu Muramatsu ,  Fumio Iwase

IPC: H04N5/225 ,  H01L27/146

CPC classification number: H01L27/14618 ,  H01L2224/16 ,  H01L2224/48091 ,  H04N5/2253 ,  H01L2924/00014

Abstract: A solid-state imaging device 2A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns and N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the plane 12 and for outputting electrical signals according to the magnitudes of charges taken out of the respective columns, respectively, a C-MOS-type semiconductor element 50 for digital-converting and sequentially outputting as serial signals electrical signals output from the circuits 20 for each of the columns, a heat transfer member 80 having a main surface 81a and a back surface 81b, and a cooling block 84 provided on the surface 81b, and the semiconductor element 50 and the surface 81a of the heat transfer member 80 are bonded to each other.

Abstract translation: 固态成像装置2A包括CCD型固体摄像元件10，该CCD型固体摄像元件10具有由M×N像素构成的摄像面12，二维排列成M行N列，N信号读出电路20配置在一方 用于每个列相对于平面12的列方向的端侧，并分别根据从各列取出的电荷的大小输出电信号，用于数字转换的C-MOS型半导体元件 并顺序地输出作为串行信号从每个列的电路20输出的电信号，具有主表面81a和后表面81b的传热构件80和设置在表面81b上的冷却块84，以及半导体元件 50和传热构件80的表面81a彼此接合。

公开(公告)号：US10930700B2

公开(公告)日：2021-02-23

申请号：US16597124

申请日：2019-10-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki Kasuya ,  Takeshi Kawahara ,  Yasuhito Miyazaki ,  Kentaro Maeta ,  Hisanori Suzuki

IPC: H01L31/0236 ,  H01L27/148 ,  H01L31/103 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

公开(公告)号：US10483302B2

公开(公告)日：2019-11-19

申请号：US15502003

申请日：2015-08-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro Takagi ,  Kentaro Maeta ,  Yasuhito Yoneta ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H01L27/146 ,  H01L31/02 ,  H01L27/148 ,  H04N5/372

Abstract: A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.

公开(公告)号：US10573769B2

公开(公告)日：2020-02-25

申请号：US14766778

申请日：2014-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuhito Miyazaki ,  Kentaro Maeta ,  Masaharu Muramatsu

IPC: H01L31/10 ,  H01L31/0352

Abstract: A back-illuminated energy ray detecting element 1 includes a semiconductor substrate and a protective film. The semiconductor substrate has a first principal surface as an energy ray incident surface and a second principal surface opposite to the first principal surface, and a charge generating region configured to generate an electric charge according to incidence of an energy ray is disposed on the second principal surface side. The protective film is disposed on the second principal surface side of the semiconductor substrate to cover at least the charge generating region, and includes silicon nitride or silicon nitride oxide. The protective film has a stress alleviating section configured to alleviate stress generated in the protective film.