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    Solid state imaging device
    2.
    发明授权
    Solid state imaging device 有权

    公开(公告)号：US11127777B2

    公开(公告)日：2021-09-21

    申请号：US16643102

    申请日：2018-07-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro Takagi ,  Yasuhito Yoneta ,  Masaharu Muramatsu

    IPC: H01L27/148 ,  H04N5/372 ,  H04N5/3728

    Abstract: A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.

    Manufacturing method for solid-state imaging device and solid-state imaging device
    3.
    发明授权
    Manufacturing method for solid-state imaging device and solid-state imaging device 有权

    公开(公告)号：US10068800B2

    公开(公告)日：2018-09-04

    申请号：US14407633

    申请日：2013-02-21

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Yasuhito Yoneta ,  Ryoto Takisawa ,  Shingo Ishihara ,  Hisanori Suzuki ,  Masaharu Muramatsu

    IPC: H01L31/0203 ,  H01L21/77 ,  H01L27/146 ,  H04N5/369

    Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step.

    Solid-state image capture device
    4.
    发明授权
    Solid-state image capture device 有权
    固态图像捕获装置

    公开(公告)号：US09559132B2

    公开(公告)日：2017-01-31

    申请号：US14407662

    申请日：2013-03-01

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro Takagi ,  Yasuhito Yoneta ,  Kenichi Sugimoto ,  Hisanori Suzuki ,  Masaharu Muramatsu

    IPC: H01L27/146 ,  H01L27/148 ,  H01L31/0236 ,  H01L31/0352

    CPC classification number: H01L27/1462 ,  H01L27/1461 ,  H01L27/14629 ,  H01L27/14806 ,  H01L27/14843 ,  H01L31/02363 ,  H01L31/03529 ,  Y02E10/50

    Abstract: A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat.

    Abstract translation: 半导体衬底在第一主表面侧上设置有多个感光区域。 绝缘膜具有彼此相对的第三主表面和第四主表面，并且布置在半导体衬底上，使得第三主表面与第一主表面相对。 与半导体衬底的厚度方向平行的与第一主表面中的每个感光区域对应的区域的横截面是凹曲线和凸曲线交替连续的波纹形状。 与第三主表面中的每个感光区域相对应的区域平行于绝缘膜的厚度方向的横截面是其中凹曲线和凸曲线对应于第一主表面交替连续的波纹形状。 第四主要表面是平的。

    Anti-Reflection Layer For Back-Illuminated Sensor
    5.
    发明申请
    Anti-Reflection Layer For Back-Illuminated Sensor 有权
    背照射传感器防反射层

    公开(公告)号：US20150200216A1

    公开(公告)日：2015-07-16

    申请号：US14591325

    申请日：2015-01-07

    Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

    Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chem ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

    IPC: H01L27/146

    CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

    Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

    Abstract translation: 用于短波长光的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 在纯硼层的顶部形成防反射层或保护层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。

    MANUFACTURING METHOD FOR SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE
    6.
    发明申请
    MANUFACTURING METHOD FOR SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置和固态成像装置的制造方法

    公开(公告)号：US20150187649A1

    公开(公告)日：2015-07-02

    申请号：US14407633

    申请日：2013-02-21

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Yasuhito Yoneta ,  Ryoto Takisawa ,  Shingo Ishihara ,  Hisanori Suzuki ,  Masaharu Muramatsu

    IPC: H01L21/77 ,  H04N5/369

    CPC classification number: H01L21/77 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2224/11 ,  H04N5/369 ,  Y10T29/49124

    Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step.

    Abstract translation: 一种制造固态成像装置的方法包括：准备具有布置在其上的具有电极的第二主表面的成像元件的第一步骤和被配置为对入射能量线进行光电转换以产生信号电荷的光电转换器部分 ; 制备具有沿其厚度方向延伸的通孔的支撑基板的第二步骤，具有第三主表面; 第三步骤，使成像元件和支撑基板彼此对准，使得电极从通孔露出，同时第二和第三主表面彼此相对并且将成像元件和支撑基板彼此接合; 以及第四步骤，在所述通孔中布置导电球形构件，并且在所述第三步骤之后将所述球形构件电连接到所述电极。

    Solid state imaging device
    7.
    发明授权
    Solid state imaging device 有权

    公开(公告)号：US11908880B2

    公开(公告)日：2024-02-20

    申请号：US17344228

    申请日：2021-06-10

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro Takagi ,  Yasuhito Yoneta ,  Masaharu Muramatsu

    IPC: H01L27/148 ,  H04N25/711 ,  H04N25/73

    CPC classification number: H01L27/14843 ,  H04N25/711 ,  H04N25/73

    Abstract: A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region in the second direction increases in the charge transfer direction in response to a change in the lengths of the plurality of second transfer column regions.

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