Semiconductor photodetection device

    公开(公告)号:US10199418B2

    公开(公告)日:2019-02-05

    申请号:US14766336

    申请日:2013-10-17

    Abstract: A plurality of semiconductor photodetecting elements have a planar shape having a pair of first sides opposed to each other in a first direction and a pair of second sides being shorter than the pair of first sides and opposed to each other in a second direction perpendicular to the first direction, and are disposed on a base so as to be adjacent to each other in juxtaposition. A plurality of bump electrodes each are disposed on sides where the pair of first sides lie in each semiconductor photodetecting element, to electrically and mechanically connect the base to each semiconductor photodetecting element. A plurality of dummy bumps are disposed so that at least one dummy bump is disposed on each of sides where the pair of second sides lie in each semiconductor photodetecting element, to mechanically connect the base to each semiconductor photodetecting element.

    SOLID-STATE IMAGE CAPTURE DEVICE
    2.
    发明申请
    SOLID-STATE IMAGE CAPTURE DEVICE 有权
    固态图像捕获器件

    公开(公告)号:US20150155314A1

    公开(公告)日:2015-06-04

    申请号:US14407662

    申请日:2013-03-01

    Abstract: A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat.

    Abstract translation: 半导体衬底在第一主表面侧上设置有多个感光区域。 绝缘膜具有彼此相对的第三主表面和第四主表面,并且布置在半导体衬底上,使得第三主表面与第一主表面相对。 与半导体衬底的厚度方向平行的与第一主表面中的每个感光区域对应的区域的横截面是凹曲线和凸曲线交替连续的波纹形状。 与第三主表面中的每个感光区域相对应的区域平行于绝缘膜的厚度方向的横截面是其中凹曲线和凸曲线对应于第一主表面交替连续的波纹形状。 第四主要表面是平的。

    Solid-state image capture device
    3.
    发明授权
    Solid-state image capture device 有权
    固态图像捕获装置

    公开(公告)号:US09559132B2

    公开(公告)日:2017-01-31

    申请号:US14407662

    申请日:2013-03-01

    Abstract: A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat.

    Abstract translation: 半导体衬底在第一主表面侧上设置有多个感光区域。 绝缘膜具有彼此相对的第三主表面和第四主表面,并且布置在半导体衬底上,使得第三主表面与第一主表面相对。 与半导体衬底的厚度方向平行的与第一主表面中的每个感光区域对应的区域的横截面是凹曲线和凸曲线交替连续的波纹形状。 与第三主表面中的每个感光区域相对应的区域平行于绝缘膜的厚度方向的横截面是其中凹曲线和凸曲线对应于第一主表面交替连续的波纹形状。 第四主要表面是平的。

Patent Agency Ranking