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    Solid state imaging device
    2.
    发明授权
    Solid state imaging device 有权

    公开(公告)号：US11127777B2

    公开(公告)日：2021-09-21

    申请号：US16643102

    申请日：2018-07-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro Takagi ,  Yasuhito Yoneta ,  Masaharu Muramatsu

    IPC: H01L27/148 ,  H04N5/372 ,  H04N5/3728

    Abstract: A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.

    Solid-state image capture device
    3.
    发明授权
    Solid-state image capture device 有权
    固态图像捕获装置

    公开(公告)号：US09559132B2

    公开(公告)日：2017-01-31

    申请号：US14407662

    申请日：2013-03-01

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro Takagi ,  Yasuhito Yoneta ,  Kenichi Sugimoto ,  Hisanori Suzuki ,  Masaharu Muramatsu

    IPC: H01L27/146 ,  H01L27/148 ,  H01L31/0236 ,  H01L31/0352

    CPC classification number: H01L27/1462 ,  H01L27/1461 ,  H01L27/14629 ,  H01L27/14806 ,  H01L27/14843 ,  H01L31/02363 ,  H01L31/03529 ,  Y02E10/50

    Abstract: A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat.

    Abstract translation: 半导体衬底在第一主表面侧上设置有多个感光区域。 绝缘膜具有彼此相对的第三主表面和第四主表面，并且布置在半导体衬底上，使得第三主表面与第一主表面相对。 与半导体衬底的厚度方向平行的与第一主表面中的每个感光区域对应的区域的横截面是凹曲线和凸曲线交替连续的波纹形状。 与第三主表面中的每个感光区域相对应的区域平行于绝缘膜的厚度方向的横截面是其中凹曲线和凸曲线对应于第一主表面交替连续的波纹形状。 第四主要表面是平的。

    Solid state imaging device
    4.
    发明授权
    Solid state imaging device 有权

    公开(公告)号：US11908880B2

    公开(公告)日：2024-02-20

    申请号：US17344228

    申请日：2021-06-10

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro Takagi ,  Yasuhito Yoneta ,  Masaharu Muramatsu

    IPC: H01L27/148 ,  H04N25/711 ,  H04N25/73

    CPC classification number: H01L27/14843 ,  H04N25/711 ,  H04N25/73

    Abstract: A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region in the second direction increases in the charge transfer direction in response to a change in the lengths of the plurality of second transfer column regions.

    Backside incident-type imaging element
    7.
    发明授权
    Backside incident-type imaging element 有权

    公开(公告)号：US11862659B2

    公开(公告)日：2024-01-02

    申请号：US17608212

    申请日：2020-07-03

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Masaharu Muramatsu ,  Shin-ichiro Takagi ,  Yasuhito Yoneta

    IPC: H01L27/146 ,  H04N25/772 ,  H04N25/778

    CPC classification number: H01L27/1464 ,  H04N25/772 ,  H04N25/778

    Abstract: A backside incident-type imaging element includes a semiconductor substrate having a front surface and a back surface on an opposite side from the front surface, a ground potential being applied to the semiconductor substrate, and a semiconductor layer formed on the front surface, in which the semiconductor layer has a first element part that includes a light receiving portion generating a signal charge according to incident light from a side of the back surface and outputs a signal voltage corresponding to the signal charge, and a second element part that includes an analog-digital converter converting the signal voltage output from the first element part into a digital signal.

    SOLID-STATE IMAGE CAPTURE DEVICE
    8.
    发明申请
    SOLID-STATE IMAGE CAPTURE DEVICE 有权
    固态图像捕获器件

    公开(公告)号：US20150155314A1

    公开(公告)日：2015-06-04

    申请号：US14407662

    申请日：2013-03-01

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro Takagi ,  Yasuhito Yoneta ,  Kenichi Sugimoto ,  Hisanori Suzuki ,  Masaharu Muramatsu

    IPC: H01L27/146

    CPC classification number: H01L27/1462 ,  H01L27/1461 ,  H01L27/14629 ,  H01L27/14806 ,  H01L27/14843 ,  H01L31/02363 ,  H01L31/03529 ,  Y02E10/50

    Abstract: A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat.

    Abstract translation: 半导体衬底在第一主表面侧上设置有多个感光区域。 绝缘膜具有彼此相对的第三主表面和第四主表面，并且布置在半导体衬底上，使得第三主表面与第一主表面相对。 与半导体衬底的厚度方向平行的与第一主表面中的每个感光区域对应的区域的横截面是凹曲线和凸曲线交替连续的波纹形状。 与第三主表面中的每个感光区域相对应的区域平行于绝缘膜的厚度方向的横截面是其中凹曲线和凸曲线对应于第一主表面交替连续的波纹形状。 第四主要表面是平的。

    Solid state imaging device
    9.
    发明授权
    Solid state imaging device 有权

    公开(公告)号：US11942506B2

    公开(公告)日：2024-03-26

    申请号：US16643110

    申请日：2018-07-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro Takagi ,  Mitsuhito Mase ,  Jun Hiramitsu ,  Yasuhito Yoneta ,  Masaharu Muramatsu

    IPC: H01L27/148 ,  H01L27/146 ,  H04N25/71 ,  H04N25/73

    CPC classification number: H01L27/14843 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14812 ,  H04N25/71 ,  H01L27/14831 ,  H04N25/73

    Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

    Solid-state imaging device
    10.
    发明授权
    Solid-state imaging device 有权

    公开(公告)号：US10483302B2

    公开(公告)日：2019-11-19

    申请号：US15502003

    申请日：2015-08-03

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro Takagi ,  Kentaro Maeta ,  Yasuhito Yoneta ,  Hisanori Suzuki ,  Masaharu Muramatsu

    IPC: H01L27/146 ,  H01L31/02 ,  H01L27/148 ,  H04N5/372

    Abstract: A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.

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