公开(公告)号：US10930700B2

公开(公告)日：2021-02-23

申请号：US16597124

申请日：2019-10-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki Kasuya ,  Takeshi Kawahara ,  Yasuhito Miyazaki ,  Kentaro Maeta ,  Hisanori Suzuki

IPC: H01L31/0236 ,  H01L27/148 ,  H01L31/103 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

公开(公告)号：US10529772B2

公开(公告)日：2020-01-07

申请号：US16081208

申请日：2017-03-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki Kasuya ,  Takeshi Kawahara ,  Yasuhito Miyazaki ,  Kentaro Maeta ,  Hisanori Suzuki

IPC: H01L31/0236 ,  H01L27/148 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

公开(公告)号：US11088190B2

公开(公告)日：2021-08-10

申请号：US15942684

申请日：2018-04-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu Muramatsu ,  Yasuhito Miyazaki ,  Hirotaka Takahashi

IPC: H01L27/146

Abstract: An optical semiconductor device includes a semiconductor substrate having a plurality of photoelectric conversion parts and having a trench formed to separate the plurality of photoelectric conversion parts from each other, an insulating layer formed on at least an inner surface of the trench, a boron layer formed on the insulating layer, and a metal layer formed on the boron layer.

公开(公告)号：US20200043974A1

公开(公告)日：2020-02-06

申请号：US16597124

申请日：2019-10-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki Kasuya ,  Takeshi Kawahara ,  Yasuhito Miyazaki ,  Kentaro Maeta ,  Hisanori Suzuki

IPC: H01L27/148 ,  H01L31/0236 ,  H01L31/103 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

公开(公告)号：US10573769B2

公开(公告)日：2020-02-25

申请号：US14766778

申请日：2014-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuhito Miyazaki ,  Kentaro Maeta ,  Masaharu Muramatsu

IPC: H01L31/10 ,  H01L31/0352

Abstract: A back-illuminated energy ray detecting element 1 includes a semiconductor substrate and a protective film. The semiconductor substrate has a first principal surface as an energy ray incident surface and a second principal surface opposite to the first principal surface, and a charge generating region configured to generate an electric charge according to incidence of an energy ray is disposed on the second principal surface side. The protective film is disposed on the second principal surface side of the semiconductor substrate to cover at least the charge generating region, and includes silicon nitride or silicon nitride oxide. The protective film has a stress alleviating section configured to alleviate stress generated in the protective film.