公开(公告)号：US10930700B2

公开(公告)日：2021-02-23

申请号：US16597124

申请日：2019-10-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki Kasuya ,  Takeshi Kawahara ,  Yasuhito Miyazaki ,  Kentaro Maeta ,  Hisanori Suzuki

IPC: H01L31/0236 ,  H01L27/148 ,  H01L31/103 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

公开(公告)号：US10529772B2

公开(公告)日：2020-01-07

申请号：US16081208

申请日：2017-03-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki Kasuya ,  Takeshi Kawahara ,  Yasuhito Miyazaki ,  Kentaro Maeta ,  Hisanori Suzuki

IPC: H01L31/0236 ,  H01L27/148 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

公开(公告)号：US20200043974A1

公开(公告)日：2020-02-06

申请号：US16597124

申请日：2019-10-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki Kasuya ,  Takeshi Kawahara ,  Yasuhito Miyazaki ,  Kentaro Maeta ,  Hisanori Suzuki

IPC: H01L27/148 ,  H01L31/0236 ,  H01L31/103 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.