公开(公告)号：US10748730B2

公开(公告)日：2020-08-18

申请号：US15160505

申请日：2016-05-20

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  Yinying Xiao-Li ,  Xuefeng Liu

IPC: H01J1/308 ,  H01L31/105 ,  H01L31/107 ,  H01L27/148 ,  H01J1/304 ,  H01J1/34

Abstract: A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.

公开(公告)号：US20160343532A1

公开(公告)日：2016-11-24

申请号：US15160505

申请日：2016-05-20

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  Yinying Xiao-Li ,  Xuefeng Liu

IPC: H01J1/308 ,  H01L31/107 ,  H01J37/22 ,  H01L27/148 ,  H01J1/304 ,  H01J1/34 ,  H01L31/105 ,  H01L31/0216

Abstract: A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.

Abstract translation: 光电阴极利用整体形成在硅衬底上的场致发射阵列（FEA）来增强光电子发射，以及直接设置在FEA的输出表面上以防止氧化的薄硼层。 场发射体由具有以二维周期图案设置的各种形状（例如，金字塔或圆形晶须）的突起形成，并且可以被配置为以反向偏压模式操作。 提供可选的栅极层以控制发射电流。 在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成任选的抗反射材料层。 在相对的照明​​和输出表面之间产生可选的外部电位。 通过特殊的掺杂方案和施加外部电位形成n型硅场致发射体和p-i-n光电二极管膜的可选组合。 光电阴极形成传感器和检测系统的一部分。

公开(公告)号：US08675188B2

公开(公告)日：2014-03-18

申请号：US13734506

申请日：2013-01-04

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/00 ,  G01J4/00

CPC classification number: G01N21/9501 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/95615 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

Abstract translation: 半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号，基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场 一个或多个结构，确定适合于至少部分校正背景场的校正光场，其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下 选择的公差等级，以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特征。

公开(公告)号：US20190285407A1

公开(公告)日：2019-09-19

申请号：US15952081

申请日：2018-04-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  John Fielden ,  Xuefeng Liu ,  Peilin Jiang

IPC: G01B11/27

Abstract: A system for measuring an overlay error of a sample is disclosed. The system may include a broadband illumination source configured to emit broadband illumination. The system may also include one or more optical elements configured to direct the broadband illumination to a target disposed on the sample, wherein the one or more optical elements are configured to collect illumination from the target and direct it to a spectrometer, wherein the spectrometer is configured to disperse multiple wavelengths of the illumination collected from the sample to multiple elements of a sensor to generate a plurality of signals. The system may also include a controller configured to calculate an overlay error between a first structure and a second structure of the target by comparing the plurality of signals with a plurality of calculated signals.

公开(公告)号：US10133181B2

公开(公告)日：2018-11-20

申请号：US15234638

申请日：2016-08-11

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: H01J40/06 ,  G03F7/20 ,  H01J1/34 ,  H01J1/304 ,  H01J37/073 ,  H01J35/06

Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

公开(公告)号：US20180108514A1

公开(公告)日：2018-04-19

申请号：US15605308

申请日：2017-05-25

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/244 ,  H01J37/10 ,  H01J37/147 ,  H01J37/04 ,  H01J37/073

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/073 ,  H01J37/10 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/0435

Abstract: A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters. The field emitters can take various shapes including a pyramid, a cone, or a rounded whisker. Optional gate layers may be placed on the output surface near the field emitters. The field emitter may be p-type or n-type doped. Circuits may be incorporated into the wafer to control the emission current. A light source may be configured to illuminate the electron source and control the emission current. The multi-column electron beam device may be a multi-column electron beam lithography system configured to write a pattern on a sample.

公开(公告)号：US20130282340A1

公开(公告)日：2013-10-24

申请号：US13919577

申请日：2013-06-17

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden ,  Bin-Ming Benjamin Tsai ,  Jingjing Zhang

IPC: G06F17/50

CPC classification number: G06F17/5018 ,  G03F7/70625 ,  G06F17/10 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06F2217/16 ,  H01L22/12 ,  H01L22/20

Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Abstract translation: 提供了流程感知度量的系统和方法。 一种方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择工艺参数的标称值和一个或多个不同值，模拟使用标称值在晶片上形成的结构的一个或多个特性， 以及基于所述结构的一个或多个特性如何在所述标称值和所述一个或多个不同值中的至少两个之间变化来确定所述光学模型的参数化。

公开(公告)号：US10558123B2

公开(公告)日：2020-02-11

申请号：US16161010

申请日：2018-10-15

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: H01J37/073 ,  G03F7/20 ,  H01J1/34 ,  H01J1/304 ,  H01J35/06

Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

公开(公告)号：US10197501B2

公开(公告)日：2019-02-05

申请号：US13710315

申请日：2012-12-10

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xuefeng Liu ,  John Fielden ,  David L. Brown

IPC: G01N21/88 ,  H01L27/148 ,  G01N21/95 ,  H01J31/26 ,  G01N21/956

Abstract: A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap.

公开(公告)号：US09966230B1

公开(公告)日：2018-05-08

申请号：US15605308

申请日：2017-05-25

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/244 ,  H01J37/10 ,  H01J37/147 ,  H01J37/04 ,  H01J37/073

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/073 ,  H01J37/10 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/0435

Abstract: A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters. The field emitters can take various shapes including a pyramid, a cone, or a rounded whisker. Optional gate layers may be placed on the output surface near the field emitters. The field emitter may be p-type or n-type doped. Circuits may be incorporated into the wafer to control the emission current. A light source may be configured to illuminate the electron source and control the emission current. The multi-column electron beam device may be a multi-column electron beam lithography system configured to write a pattern on a sample.