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公开(公告)号：US11810747B2
公开(公告)日：2023-11-07
申请号：US17377065
申请日：2021-07-15
CPC分类号： H01J31/26 , H01J29/04 , H01J29/085
摘要： An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.
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公开(公告)号：US11676790B2
公开(公告)日：2023-06-13
申请号：US17595661
申请日：2020-05-22
申请人： PHOTONIS FRANCE
发明人： Pascal Lavoute , Gert Nützel
CPC分类号： H01J29/08 , H01J31/26 , H01J31/506
摘要： An electromagnetic radiation detector includes an inlet window intended to receive a stream of incident photons, as well as a photocathode in the form of a semiconductive layer. A conductive layer is deposited on the downstream face of the inlet window and a thin dielectric layer is disposed between the conductive layer and the semiconductive layer. The conductive layer is brought to a potential below that of the semiconductive layer so as to drive the photoelectrons out of the recombination zone and consequently improve the quantum yield of the photocathode.
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公开(公告)号：US09601299B2
公开(公告)日：2017-03-21
申请号：US13947975
申请日：2013-07-22
发明人： Yung-Ho Alex Chuang , John Fielden
IPC分类号： H01J5/16 , H01J29/38 , H01J1/34 , H01J31/26 , H01J31/50 , G02B21/12 , G01N21/95 , H01L27/146 , H01L27/148
CPC分类号： H01J29/385 , G01N21/9501 , G02B21/125 , H01J1/34 , H01J31/26 , H01J31/50 , H01L27/14643 , H01L27/148 , H01L27/14806 , H01L27/14893
摘要： A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.
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4.发明授权Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching 有权蚀刻速率建模及其使用具有多个参数，用于室内和室对室匹配公开(公告)号：US09502221B2
公开(公告)日：2016-11-22
申请号：US14243705
申请日：2014-04-02
IPC分类号： H01J7/24 , H01J31/26 , H01J37/32 , G05B19/418
CPC分类号： H01J37/32926 , G05B19/418 , H01J37/32183 , H01J37/32935 , H01J37/3299
摘要： A method includes receiving a voltage and current measured at an output of an RF generator of a first plasma system and calculating a first model etch rate based on the voltage and current, and a power. The method further includes receiving a voltage and current measured at an output of the RF generator of a second plasma system, determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system, and comparing the second model etch rate with the first model etch rate. The method includes adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate. The method is executed by a processor.
摘要翻译： 一种方法包括接收在第一等离子体系统的RF发生器的输出处测量的电压和电流，并且基于电压和电流以及功率来计算第一模型蚀刻速率。 该方法还包括接收在第二等离子体系统的RF发生器的输出处测量的电压和电流，基于第二等离子体系统的RF发生器的输出处的电压和电流确定第二模型蚀刻速率，以及比较 具有第一模型蚀刻速率的第二模型蚀刻速率。 该方法包括在确定第二模型蚀刻速率与第一模型蚀刻速率不匹配时，调整第二等离子体系统的RF发生器的输出端的功率以实现与第一等离子体系统相关联的第一模型蚀刻速率。 该方法由处理器执行。
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5.发明申请High Resolution High Quantum Efficiency Electron Bombarded CCD Or CMOS Imaging Sensor 有权高分辨率高量子效率电子轰击CCD或CMOS成像传感器公开(公告)号：US20160027605A1
公开(公告)日：2016-01-28
申请号：US14614088
申请日：2015-02-04
发明人： Ximan Jiang , Stephen Biellak , John Fielden
摘要： An electron-bombarded detector for detecting low light signals includes a vacuum tube structure defining a cylindrical vacuum tube chamber, a photocathode disposed at a first end of the vacuum tube chamber, a sensor disposed at a second end of the vacuum tube chamber, ring electrodes disposed in the vacuum tube chamber for generating an electric field that accelerates emitted photoelectrons toward the sensor, and a magnetic field generator configured to generate a symmetric magnetic field that applies a focusing lens effect on the photoelectrons. The ring electrodes and magnetic field generator are operating using one of a reduced distance focusing approach and an acceleration/deceleration approach such that the photoelectrons have a landing energy below 2 keV. The use of reflective mode photocathodes is enabled using either multi-pole deflector coils, or ring electrodes formed by segmented circular electrode structures. Large angle deflections are achieved using magnetic or electrostatic deflectors.
摘要翻译： 用于检测低光信号的电子轰击检测器包括限定圆柱形真空管室的真空管结构，设置在真空管室的第一端的光电阴极，设置在真空管室的第二端的传感器，环形电极 设置在真空管室中，用于产生将发射的光电子朝向传感器加速的电场;以及磁场发生器，被配置为产生对光电子产生聚焦透镜效应的对称磁场。 环形电极和磁场发生器使用减小的距离聚焦方法和加速/减速方法之一进行操作，使得光电子具有低于2keV的着陆能量。 使用反射模式光电阴极可以使用多极偏转线圈或由分段圆形电极结构形成的环形电极。 使用磁性或静电偏转器实现大角度偏转。
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公开(公告)号：US20110038465A1
公开(公告)日：2011-02-17
申请号：US12620990
申请日：2009-11-18
CPC分类号： H01J35/065 , H01J2235/062
摘要： Systems and methods are provided for field emission device. An array of carbon nanotubes is arranged in a variable height distribution over a cathode substrate. An anode is provided to accelerate the emitted electrons toward an x-ray plate. Voltage is supplied across the array of carbon nanotubes to cause emission of electrons. The pointed height distribution may be linear or parabolic, and a peak height of the variable height distribution may occur in a center of the array. A side gate may also be provided adjacent the array of carbon nanotubes to provide improved electron emission and focusing control.
摘要翻译： 为场发射装置提供系统和方法。 碳纳米管阵列以阴极基底上的可变高度分布布置。 提供阳极以朝向x射线板加速发射的电子。 在碳纳米管阵列上提供电压以引起电子的发射。 尖的高度分布可以是线性的或抛物线的，并且可变高度分布的峰高可能发生在阵列的中心。 也可以在碳纳米管阵列附近提供侧栅，以提供改进的电子发射和聚焦控制。
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7.发明授权Method of generating multiple x-ray images of an object from a single x-ray exposure 有权从单个X射线曝光产生物体的多个X射线图像的方法
公开(公告)号：US6052432A
公开(公告)日：2000-04-18
申请号：US206354
申请日：1998-12-07
CPC分类号： H05G1/64
摘要： An x-ray image intensifier includes a photoconductive x-ray detector having an electro-optic light modulator disposed on a photoconductive detector layer. The photoconductive x-ray detector absorbs x-rays passing through an object to be imaged to form an x-ray exposure of the object. An optical image of the x-ray exposure is generated when light passes through the photoconductive x-ray detector. An imager captures optical images of the x-ray exposures. A processor coupled to the imager digitizes and stores the optical images of the x-ray exposure captured by the imager at selected intervals.
摘要翻译： X射线图像增强器包括具有设置在光电导检测器层上的电光调制器的光电导X射线检测器。 光电导X射线检测器吸收通过待成像对象的X射线以形成物体的X射线曝光。 当光通过光电导X射线检测器时，产生x射线曝光的光学图像。 成像仪捕获X射线曝光的光学图像。 耦合到成像器的处理器以选定的间隔数字化和存储由成像器捕获的x射线曝光的光学图像。
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公开(公告)号：US6005257A
公开(公告)日：1999-12-21
申请号：US527688
申请日：1995-09-13
IPC分类号： H01J1/34 , H01L3/0304 , H01J31/26 , H01J40/06
CPC分类号： H01J9/233 , H01J1/34 , H01J2201/3423 , H01J2231/50015
摘要： An improved photocathode and image intensifier tube are disclosed along with a method for making both the tube and photocathode. The disclosed photocathode and image intensifier tube have an active layer comprising two or more sublayers. The first sublayer has a first concentration of a group III-V semiconductor compound while the second sublayer has a second concentration of the group III-V semiconductor compound. The multilayer active layer is coupled to a window layer.
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公开(公告)号：US4837631A
公开(公告)日：1989-06-06
申请号：US191862
申请日：1988-05-09
申请人： John W. Hicks, Jr.
发明人： John W. Hicks, Jr.
摘要： An electronic camera tube includes a transparent envelope enclosing an evacuated cavity, a photocathode layer on a first internal surface of the envelope and an array of storage electrodes on a second internal surface of the envelope. The first and second surfaces are parallel and closely spaced. The photocathode layer emits electrons in response to an incident light intensity pattern. The storage electrodes in the array receive the electrons from the photocathode layer and emit secondary electrons, thereby accumulating a charge pattern representing the light intensity pattern. The camera tube further includes a readout device associated with each storage electrode for reading out the charge pattern during a readout phase. The readout devices operate by generating a readout current through an evacuated region adjacent to each storage electrode. Each readout current is a function of the charge accumulated on the adjacent storage electrode during the exposure phase. A number of different readout techniques can be utilized.
摘要翻译： 电子照相机管包括封闭真空腔的透明封套，在外壳的第一内表面上的光电阴极层和在封套的第二内表面上的一组存储电极。 第一和第二表面是平行和紧密间隔的。 光电阴极层响应于入射光强度图案发射电子。 阵列中的存储电极接收来自光电阴极层的电子并发射二次电子，从而累积表示光强度图案的电荷图案。 相机管还包括与每个存储电极相关联的读出装置，用于在读出阶段期间读出电荷模式。 读出装置通过产生与每个存储电极相邻的抽真空区域的读出电流来工作。 每个读出电流是在曝光阶段期间累积在相邻存储电极上的电荷的函数。 可以使用多种不同的读出技术。
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10.发明授权Electronic camera tube utilizing an array of charge storage cells for image storage and tunneling devices for readout 失效电子照相机管利用一系列用于图像存储的电荷存储单元和用于读出的隧穿装置
公开(公告)号：US4827346A
公开(公告)日：1989-05-02
申请号：US96623
申请日：1987-09-14
申请人： John W. Hicks, Jr.
发明人： John W. Hicks, Jr.
摘要： An electronic camera tube includes a transparent envelope enclosing an evacuated cavity, a photocathode layer on a first internal surface of the envelope and an array of cells on a second internal surface of the envelope. The first and second surfaces are parallel and closely spaced. The photocathode layer emits electrons in response to an incident light intensity pattern. The cells in the array receive the electrons from the photocathode layer and emit secondary electrons, thereby accumulating a charge pattern representing the light intensity pattern. The camera tube further includes readout devices for reading out the charge pattern during a readout phase. The readout devices operate by electron tunneling and inject electrons perpendicular to the cell array through the evacuated cavity to readout electrodes on the photocathode layer. The electron currents injected through the evacuated cavity by the readout devices are controlled in response to the charge on the respective cells in the array.
摘要翻译： 电子照相机管包括封闭真空腔的透明封套，在外壳的第一内表面上的光电阴极层和在封套的第二内表面上的电池阵列。 第一和第二表面是平行和紧密间隔的。 光电阴极层响应于入射光强度图案发射电子。 阵列中的单元接收来自光电阴极层的电子并发射二次电子，从而累积表示光强度图案的电荷图案。 相机管还包括读出装置，用于在读出阶段期间读出电荷模式。 读出装置通过电子隧穿工作，并通过真空腔将与电池阵列垂直的电子注入到光电阴极层上的读出电极。 响应于阵列中各个单元上的电荷来控制由读出装置通过抽真空腔注入的电子电流。
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