Wafer scale enhanced gain electron bombarded CMOS imager

    公开(公告)号:US11810747B2

    公开(公告)日:2023-11-07

    申请号:US17377065

    申请日:2021-07-15

    IPC分类号: H01J31/26 H01J29/04 H01J29/08

    摘要: An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

    Non-radioactive ion source using high energy electrons
    8.
    发明授权
    Non-radioactive ion source using high energy electrons 有权
    使用高能电子的非放射性离子源

    公开(公告)号:US09006678B2

    公开(公告)日:2015-04-14

    申请号:US13960006

    申请日:2013-08-06

    摘要: A system and method for producing a continuous or pulsed source of high energy electrons at or near atmospheric pressure is disclosed. High energy electrons are used to ionize analyte molecules in ambient air through collisions with reactant ions. The device includes an electron emitter, electron optics, and a thin membrane in an evacuated tube. The electron emitter may include a photocathode surface mounted on an optically transparent window and an external source of UV photons. The transparent window may include a UV transparent window mounted on an evacuated tube and/or the evacuated tube may be a transparent tube on which a photocathode surface film is deposited. The electron optics may include successive electrodes biased at increasing voltages. The membrane may include a material transparent or semi-transparent to energetic electrons. Upon impacting the membrane, continuous or pulsed electron packets are partially transmitted through to a high pressure ionization region.

    摘要翻译: 公开了一种在大气压或接近大气压下产生高能电子的连续或脉冲源的系统和方法。 高能电子用于通过与反应物离子的碰撞使环境空气中的分析物分子电离。 该装置包括电子发射器,电子光学器件和真空管中的薄膜。 电子发射器可以包括安装在光学透明窗口和外部UV光子源上的光电阴极表面。 透明窗口可以包括安装在真空管上的UV透明窗口和/或真空管可以是其上沉积有光电阴极表面膜的透明管。 电子光学器件可以包括以增加的电压偏置的连续电极。 膜可以包括对高能电子透明或半透明的材料。 在撞击膜时,连续的或脉冲的电子包被部分地传输到高压电离区域。

    Field emission electron source and field emission device using the same
    9.
    发明授权
    Field emission electron source and field emission device using the same 有权
    场致发射电子源和场致发射装置使用

    公开(公告)号:US08907555B2

    公开(公告)日:2014-12-09

    申请号:US13592795

    申请日:2012-08-23

    IPC分类号: H01J19/24 H01J19/06

    摘要: A field emission electron source includes a carbon nanotube micro-tip structure. The carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate. A field emission device is also disclosed.

    摘要翻译: 场发射电子源包括碳纳米管微尖端结构。 碳纳米管微尖端结构包括绝缘基板和图案化碳纳米管薄膜结构。 绝缘基板包括表面。 表面包括边缘。 图案化的碳纳米管膜结构部分地布置在绝缘基板的表面上。 图案化碳纳米管膜结构包括两端连接的带状臂,形成从绝缘基板的表面的边缘突出的顶端部分并悬挂。 两个条形臂中的每一个包括平行于绝缘基板的表面的多个碳纳米管。 还公开了一种场致发射器件。

    Method for making emitter having carbon nanotubes
    10.
    发明授权
    Method for making emitter having carbon nanotubes 有权
    制造具有碳纳米管的发射体的方法

    公开(公告)号:US08801487B2

    公开(公告)日:2014-08-12

    申请号:US13792524

    申请日:2013-03-11

    IPC分类号: H01J9/00 H01J9/04

    摘要: A method for making an emitter is disclosed. A number of carbon nanotubes in parallel with each other are provided. The carbon nanotubes have a number of first ends and a number of second ends opposite to the number of first ends. The first ends are attached on a first electrode and the second ends are attached on a second electrode. The first electrode and the second electrode are spaced from each other. A voltage is supplied between the first electrode and the second electrode to break the carbon nanotubes.

    摘要翻译: 公开了一种制造发射器的方法。 提供了彼此平行的多个碳纳米管。 碳纳米管具有与第一端数相反的多个第一端和多个第二端。 第一端附接在第一电极上,第二端附接在第二电极上。 第一电极和第二电极彼此间隔开。 在第一电极和第二电极之间提供电压以破坏碳纳米管。