公开(公告)号：US06963052B2

公开(公告)日：2005-11-08

申请号：US10487842

申请日：2003-05-19

申请人： Akira Kuibira ,  Hirohiko Nakata

发明人： Akira Kuibira ,  Hirohiko Nakata

IPC分类号： C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H05B3/68

CPC分类号： H01L21/67109

摘要： Heater module, and semiconductor manufacturing equipment in which the heater module is utilized, for raising the cooling speed of a post-heating heater markedly more than conventional, and that can contribute toward bettering and improving productivity, without accompanying scaling-up of and cost increases in the semiconductor manufacturing equipment. The heater module is furnished with heater part 1a for controlled heating of a wafer placed on its top face, and block part 3a provided to be shiftable relative to said heater part, for varying heat capacity in total with heater part 1a by abutting on or separating from the reverse surface of heater part 1a. By having the heat capacity of block part 3a be 20% or more of the total heat capacity of heater part 1a and block part 3a, the heater cooling speed can be made 10° C./min or more.

摘要翻译： 加热器模块和使用加热器模块的半导体制造设备，用于提高后加热加热器的冷却速度，其显着地比传统的更高，并且可以有助于改善和提高生产率，而不伴随增加和成本增加 在半导体制造设备中。 加热器模块配备有加热器部分1a，用于受控加热放置在其顶面上的晶片，以及块部分3a，其被设置为可相对于所述加热器部件移动，用于通过邻接加热器部分1a来改变总体上的热容量 在加热器部分1a的反面上或与其分离。 通过使块部3a的热容量为加热器部1a和块部3a的总热容量的20％以上，加热器的冷却速度可以为10℃/分钟以上。

公开(公告)号：US20050242079A1

公开(公告)日：2005-11-03

申请号：US11160856

申请日：2005-07-13

申请人： Akira Kuibira ,  Hirohiko Nakata

发明人： Akira Kuibira ,  Hirohiko Nakata

IPC分类号： C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H05B3/68

CPC分类号： H01L21/67109

摘要： Heater module, and semiconductor manufacturing equipment in which the heater module is utilized, for raising the cooling speed of a post-heating heater markedly more than conventional, and that can contribute toward bettering and improving productivity, without accompanying scaling-up of and cost increases in the semiconductor manufacturing equipment. The heater module is furnished with heater part 1a for controlled heating of a wafer placed on its top face, and block part 3a provided to be shiftable relative to said heater part, for varying heat capacity in total with heater part 1a by abutting on or separating from the reverse surface of heater part 1a. By having the heat capacity of block part 3a be 20% or more of the total heat capacity of heater part 1a and block part 3a, the heater cooling speed can be made 10° C./min or more.

摘要翻译： 加热器模块和使用加热器模块的半导体制造设备，用于提高后加热加热器的冷却速度，其显着地比传统的更高，并且可以有助于改善和提高生产率，而不伴随增加和成本增加 在半导体制造设备中。 加热器模块配备有加热器部分1a，用于受控加热放置在其顶面上的晶片，以及块部分3a，其被设置为可相对于所述加热器部件移动，用于通过邻接加热器部分1a来改变总体上的热容量 在加热器部分1a的反面上或与其分离。 通过使块部3a的热容量为加热器部1a和块部3a的总热容量的20％以上，加热器的冷却速度可以为10℃/分钟以上。

公开(公告)号：US20050000956A1

公开(公告)日：2005-01-06

申请号：US10711064

申请日：2004-08-20

申请人： Akira Kuibira ,  Masuhiro Natsuhara ,  Hirohiko Nakata

发明人： Akira Kuibira ,  Masuhiro Natsuhara ,  Hirohiko Nakata

IPC分类号： H05B3/20 ,  C23C16/46 ,  H01L21/00 ,  H05B3/14 ,  H05B3/26 ,  H05B3/68

CPC分类号： H01L21/67103 ,  H05B3/143 ,  H05B3/265

摘要： Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.

摘要翻译： 其晶片保持面具有优异的等温性能，适用于半导体制造装置和液晶制造装置的陶瓷基座。 在板状烧结陶瓷体1中，形成电阻加热元件2。 烧结陶瓷体外周边缘1a和电阻加热元件本体外周边缘2a之间的回拉长度L的波动在±0.8％以内，而晶片保持面的整个表面的等温额定值为±1.0％ 减。 优选的等温额定值为±0.5％以下，通过使拉回长度L的波动在±0.5％以内可以实现。

公开(公告)号：US06671489B2

公开(公告)日：2003-12-30

申请号：US10169129

申请日：2002-06-27

申请人： Masuhiro Natsuhara ,  Hirohiko Nakata

发明人： Masuhiro Natsuhara ,  Hirohiko Nakata

IPC分类号： G03G1520

CPC分类号： G03G15/2064 ,  G03G2215/2016 ,  G03G2215/2035

摘要： In a heating-type toner-fixing unit using a ceramic heater and a cylindrical fixing film, the shape of the fixing face-side surface of a ceramic heater 10 which comes into contact with a fixing film 3 and the shape of the portions of a heater support 12 at least adjacent to the fixing face-side surface are formed into a shape that is almost identical to a naturally deformed shape of the fixing film 3 in a static state or a traveling state where the fixing film is pressed by a pressure roller 4 at a designated nip width. It is also possible that the nip portion and portions adjacent thereto at the entrance side and exit side are formed into a flat shape and portions other than the flat portions are formed into a curved surface shape along the cylindrical shape of the fixing film 3.

公开(公告)号：US06508884B2

公开(公告)日：2003-01-21

申请号：US09741477

申请日：2000-12-19

申请人： Akira Kuibira ,  Hirohiko Nakata ,  Kenjiro Higaki ,  Masuhiro Natsuhara ,  Takashi Ishii ,  Yasuyuki Matsui

发明人： Akira Kuibira ,  Hirohiko Nakata ,  Kenjiro Higaki ,  Masuhiro Natsuhara ,  Takashi Ishii ,  Yasuyuki Matsui

IPC分类号： C23C1600

CPC分类号： H01L21/6835 ,  C04B37/005 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2237/06 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/066 ,  C04B2237/08 ,  C04B2237/10 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/52 ,  C04B2237/567 ,  C04B2237/62 ,  C04B2237/66 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/80 ,  H01L21/4857 ,  H01L21/67103 ,  C04B41/0072 ,  C04B41/4539 ,  C04B41/4572 ,  C04B41/5133 ,  C04B41/5022 ,  C04B35/581

摘要： A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece, paste containing metal particles is applied and fired to form a heater circuit pattern as a conductive layer. Between the surface of the sintered aluminum nitride piece having the heater circuit pattern formed thereon and another sintered aluminum nitride piece, a glass layer is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces together.

摘要翻译： 一种用于半导体制造装置的晶片保持器，其具有高导热性并且包括可以以高精度图案形成的加热器电路图案的导电层，制造晶片保持器的方法，以及其中具有 提供晶片保持器。 在烧结的氮化铝片的表面上，涂覆含有金属颗粒的糊状物并烧制以形成作为导电层的加热器电路图案。 在其上形成有加热器电路图案的烧结氮化铝片的表面和另一个烧结的氮化铝片之间，设置玻璃层作为待烧结的接合层，以将烧结的氮化铝片接合在一起。

公开(公告)号：US06384378B2

公开(公告)日：2002-05-07

申请号：US09834642

申请日：2001-04-16

申请人： Masuhiro Natsuhara ,  Hirohiko Nakata

发明人： Masuhiro Natsuhara ,  Hirohiko Nakata

IPC分类号： H05B300

CPC分类号： G03G15/2053 ,  G03G15/2064 ,  H05B3/0095

摘要： A ceramic heater that is used in a toner-fixing system comprising a ceramic heater and a heat-resistant film, that reduces the degree of deformation of the heat-resistant film, that lightens the load applied to the film at the time of revolution, that prevents the fracture of the film, and that enables fixing at a high rate exceeding 24 ppm. A ceramic base material 11 of the ceramic heater attached to a heating cylinder comprises aluminum nitride or silicon nitride. A heating element 12 and current-feeding electrodes are made of heat-resistant metal such as tungsten and molybdenum or heat resistant alloy and are formed on the ceramic base material. In the ceramic heater, at least one part of the face (the fixing face) that contacts the heat-resistant film is curved when viewed from a direction perpendicular to the feeding direction of a copying sheet.

摘要翻译： 一种用于包括陶瓷加热器和耐热膜的调色剂定影系统中的陶瓷加热器，其减小了耐热膜的变形程度，从而减轻了在旋转时施加到膜上的载荷， 可以防止膜的断裂，能够以超过24ppm的高速率进行固定。 附着在加热缸上的陶瓷加热器的陶瓷基材11包括氮化铝或氮化硅。 加热元件12和馈电电极由诸如钨和钼的耐热金属或耐热合金制成并形成在陶瓷基材上。 在陶瓷加热器中，从与复印纸的进给方向垂直的方向观察时，与耐热膜接触的面（固定面）的至少一部分是弯曲的。

公开(公告)号：US06365879B1

公开(公告)日：2002-04-02

申请号：US09707810

申请日：2000-11-07

申请人： Akira Kuibira ,  Hirohiko Nakata

发明人： Akira Kuibira ,  Hirohiko Nakata

IPC分类号： H05B368

CPC分类号： H01L21/67103

摘要： A wafer holder includes a heater interposed between at least one pair of ceramic base members. The wafer holder can be regarded as including a holding surface side structure on a side of the heater facing toward the wafer, and a backside structure on the opposite side of the heater. The backside structure has a heat insulating character. The ceramic base member in the backside structure is formed of ceramic having a lower heat conductivity than that of the ceramic base member in the holding surface side structure. Further, the ceramic base member in the backside structure has a heat conductivity of 100 W/mK or less and a joint layer has a heat conductivity of 10 W/mK or less. In this way, the wafer holder prevents heat from spreading toward the backside of the wafer holder.

摘要翻译： 晶片保持器包括夹在至少一对陶瓷基底构件之间的加热器。 晶片保持器可以被认为在加热器的朝向晶片的一侧上包括保持表面侧结构，并且在加热器的相对侧上具有背面结构。 背面结构具有绝热特性。 背面结构中的陶瓷基底构件由保持面侧结构中具有比陶瓷基底构件低的导热性的陶瓷形成。 此外，背面结构体中的陶瓷基材的导热率为100W / m·K以下，接合层的导热率为10W / m·K以下。 以这种方式，晶片保持器防止热量向晶片保持器的背面扩散。

公开(公告)号：US06271163B1

公开(公告)日：2001-08-07

申请号：US09357600

申请日：1999-07-20

申请人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka ,  Yasuhiro Murase

发明人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka ,  Yasuhiro Murase

IPC分类号： C04B35581

CPC分类号： C04B35/581 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/00

摘要： An aluminum nitride sintered body has excellent thermal shock resistance and strength, and is applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. The aluminum nitride sintered body contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, respectively as sintering aids, and a residual amount of carbon in a range from 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.

摘要翻译： 氮化铝烧结体具有优异的耐热冲击性和强度，并且适用于在严格的热循环下使用的用于功率模块的辐射基板或用于半导体设备的夹具。 氮化铝烧结体分别含有0.01〜5重量％的碱土类金属元素化合物，以氧化物计，0.01〜10重量％的稀土元素化合物，以氧化物计，作为烧结助剂， 残留量在0.005〜0.1重量％的范围内，从而抑制晶粒生长，提高耐热冲击性和烧结体的强度。

公开(公告)号：US06261703B1

公开(公告)日：2001-07-17

申请号：US09230178

申请日：1999-01-21

申请人： Kazutaka Sasaki ,  Hirohiko Nakata

发明人： Kazutaka Sasaki ,  Hirohiko Nakata

IPC分类号： H01L2312

CPC分类号： H05K1/0271 ,  C04B35/111 ,  C04B35/581 ,  C04B35/587 ,  C04B35/62655 ,  C04B37/026 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/5445 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/122 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/66 ,  C04B2237/704 ,  C04B2237/708 ,  H01L23/3735 ,  H01L2224/48091 ,  H05K1/0306 ,  H05K3/38 ,  H05K2201/09145 ,  H05K2201/098 ,  Y10T428/12535 ,  Y10T428/12576 ,  Y10T428/24917 ,  H01L2924/00014

摘要： A highly reliable copper circuit-joined board that, in mounting a semiconductor element, a lead frame or the like on a ceramic substrate, enables the semiconductor element, the lead frame or the like to be strongly joined to the substrate without breaking or deformation of the substrate found in conventional joining methods, such as brazing and joining using a copper/copper oxide eutectic crystal. Any one of an interposing layer comprising a brazing material layer comprising silver and/or copper as a main component and an active metal or an interposing layer having a two-layer structure comprising a first interposing layer comprising the brazing material layer or a high-melting metallizing layer and a second interposing layer, having a melting point of 1000° C. or below, comprising Ni, Fe, Cu as a main component in that order from the substrate side, is formed on a ceramic substrate, and a conductor layer, comprising copper as a main component, which, in both the lengthwise and widthwise directions, is at least 0.05 mm shorter than the interposing layer, is formed on the interposing layer to prepare a copper circuit-joined board. The copper circuit-joined board may comprise the base board having thereon an outer layer comprising Ni as a main component. A semiconductor element is mounted on the copper circuit-joined board to prepare a semiconductor device.

摘要翻译： 一种高度可靠的铜电路接合板，其在将半导体元件，引线框架等安装在陶瓷基板上时能够使半导体元件，引线框架等牢固地接合到基板而不会发生断裂或变形 在常规接合方法中发现的基板，例如使用铜/铜氧化物共晶晶体的钎焊和接合。 包含以银和/或铜为主要成分的钎焊材料层的中介层和活性金属或具有两层结构的插层，包括含有钎焊材料层或高熔点的第一介入层 在陶瓷基板上形成从基板侧依次包含Ni，Fe，Cu作为主要成分的熔点为1000℃以下的金属化层和第二中介层，导体层， 包括铜作为主要成分，其在长度方向和宽度方向上比中间层短至少0.05mm，形成在插层上以制备铜电路接合板。 铜电路接合板可以包括其上具有包括Ni作为主要成分的外层的基板。 半导体元件安装在铜电路接合板上以制备半导体器件。

公开(公告)号：US5679469A

公开(公告)日：1997-10-21

申请号：US506898

申请日：1995-07-26

申请人： Kouhei Shimoda ,  Hirohiko Nakata

发明人： Kouhei Shimoda ,  Hirohiko Nakata

IPC分类号： C04B41/90 ,  C04B41/52 ,  C04B41/89 ,  H01L23/13 ,  B32B15/04 ,  B32B15/16 ,  B32B18/00

CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2111/00336 ,  Y10S428/901 ,  Y10T428/12028 ,  Y10T428/12056 ,  Y10T428/12146 ,  Y10T428/12174 ,  Y10T428/12576 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/12889 ,  Y10T428/12944

摘要： A metallized ceramic substrate having a smooth plating layer comprises a ceramic substrate containing aluminum nitride as a main component; a tungsten- and/or molybdenum-based metallized layer formed on at least one face of the ceramic substrate; and a nickel-based plating layer formed on the metallized layer wherein the plating layer has a thickness of not greater than 2 .mu.m and a surface roughness (Ra) of not greater than 2 .mu.m. Alternatively, the plating layer on the ceramic substrate may comprise a first nickel-based plating layer having a thickness of not greater than 2 .mu.m and a second gold-based plating layer having a thickness of not greater than 1 .mu.m wherein the gold-based plating layer has a surface roughness (Ra) of 2 .mu.m or less. These metallized substrates are produced by applying a metallizing paste containing tungsten and/or molybdenum onto a green aluminum nitride ceramic substrate, flattening the metallizing paste layer, firing the metallizing paste-coated ceramic substrate, and forming the plating layer or layers.

摘要翻译： 具有平滑镀层的金属化陶瓷基板包括含有氮化铝作为主要成分的陶瓷基板; 形成在所述陶瓷基板的至少一个面上的钨和/或钼基金属化层; 以及形成在金属化层上的镍基镀层，其中镀层的厚度不大于2μm，表面粗糙度（Ra）不大于2μm。 或者，陶瓷基板上的镀层可以包括厚度不大于2μm的第一镍基镀层和厚度不大于1μm的第二金基镀层，其中金 - 基底镀层的表面粗糙度（Ra）为2μm以下。 这些金属化基板通过将涂覆有钨和/或钼的金属化浆料涂敷在绿色氮化铝陶瓷基板上，使金属化糊料层平坦化，烧结金属化涂布陶瓷基板，形成镀层而制成。