-
公开(公告)号：US07361230B2
公开(公告)日：2008-04-22
申请号：US10119955
申请日：2002-04-09
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68714 , Y10T279/23
摘要： In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.
摘要翻译： 在基板处理装置中，用于安装基板的陶瓷模块具有具有电路和陶瓷基体的平板部分，并且作为安装基板的表面以外的平板部分的至少一部分表面， 与腔室接触，它由腔室支撑。 因此，可以提供提高热均匀性，降低成本的衬底处理装置，适合于装置的尺寸减小，并且可以减轻安装电源导电构件等的限制。
-
公开(公告)号：US07268321B2
公开(公告)日：2007-09-11
申请号：US10498460
申请日：2003-03-19
CPC分类号： H01L21/68757 , H01L21/67103 , H01L21/67248
摘要： A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).
摘要翻译： 提供了一种晶片保持器，其中支撑和加热晶片中的局部热辐射保持在控制之下，并且晶片保持表面的温度均匀性得到增强，并且通过利用晶片保持器，适于处理较大直径晶片的半导体制造装置为 提供。 在陶瓷基板（2）内具有电阻加热元件（3）等并配有穿过反应室（6）的引线（4）的晶片保持器（1）中，引线（4）容纳在 管状引导构件（5）以及引导构件（5）和反应室（6）之间的间隔以及引导构件（5）的内部被气密地密封。 引导构件（5）和陶瓷基板（2）不接合在一起，并且在内部被密封的引导构件（5）的内部，朝向陶瓷基板（2）的气氛优选为 与反应室（6）中的气氛相同。
-
公开(公告)号：US20070205787A1
公开(公告)日：2007-09-06
申请号：US11701416
申请日：2007-02-02
IPC分类号： G01R31/02
CPC分类号： G01R31/2865 , G01R1/18 , G01R31/2875
摘要： A wafer holder with which probing can be performed with little or virtually no noise due to the wafer being shielded from electromagnetic waves; and a wafer prober on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, and a resistance heat generator for heating the chuck top. At least part of the resistance heat generator is covered by an insulating layer, and an electrically conductive layer is present on an opposite side of the resistance heat generator having the insulating layer. The electrically conductive layer blocks electromagnetic waves that adversely affect inspection. The insulating layer preferably covers the entire surface of the resistance heat generator, and the electrically conductive layer preferably covers the entire surface of the resistance heat generator comprising the insulating layer.
摘要翻译： 晶片保持器，由于晶片被电磁波屏蔽，可以进行很少或几乎没有噪声的探测; 以及安装晶片保持器的晶片探测器。 本发明的晶片保持器包括用于安装晶片的卡盘顶板和用于加热卡盘顶部的电阻发热器。 电阻发热体的至少一部分被绝缘层覆盖，导电层存在于具有绝缘层的电阻发热体的相反侧。 导电层阻止对检查产生不利影响的电磁波。 绝缘层优选覆盖电阻发热体的整个表面，并且导电层优选覆盖包括绝缘层的电阻发热体的整个表面。
-
4.发明授权Ceramic joined body, substrate holding structure and substrate processing apparatus 有权陶瓷接合体，基板保持结构和基板处理装置公开(公告)号：US07211153B2
公开(公告)日：2007-05-01
申请号：US10276394
申请日：2002-04-11
CPC分类号： H01L21/6833 , B32B18/00 , B32B2309/022 , B32B2315/02 , C04B35/44 , C04B35/581 , C04B37/005 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3865 , C04B2235/96 , C04B2237/064 , C04B2237/08 , Y10T279/23
摘要： A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure includes a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned therebetween for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest proportional content among the aforementioned three types of components in the joining layer (8).
摘要翻译： 获得具有优异的耐腐蚀性和气密性的基板保持结构，在施加机械或热应力时具有优异的尺寸精度和足够的耐久性。 用作基板保持结构的保持器（1）包括用于保持基板的陶瓷基体（2），与陶瓷基体（2）接合的保护筒（7）和位于其间的接合层（8），用于将陶瓷 基座（2）和保护筒（7）彼此连接。 接合层（8）含有2质量％以上且70质量％以下的稀土类氧化物，至少10质量％以上且78质量％以下的氧化铝，至少2质量％以上 超过50质量％的氮化铝。 在接合层（8）中，上述三种成分中的稀土氧化物或氧化铝的比例含量最大。
-
5.发明申请公开(公告)号：US20070028834A1
公开(公告)日：2007-02-08
申请号：US11496022
申请日：2006-07-31
IPC分类号： C30B25/00
CPC分类号： G01R31/2886 , G01R31/2831
摘要： The present invention provides a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith. A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top. A cavity is formed between the chuck top and the support member, and a vacuum space member is provided to the lowest part of a member that is attached to a surface of the chuck top on the side opposite the wafer mounting surface.
摘要翻译： 本发明提供了一种高刚性的晶片探针晶片保持器，并且增加了隔热效果，从而提高了位置精度，热均匀性和芯片温度升高和冷却速度，以及配备其的晶片探测器。 本发明的晶片保持器包括安装晶片的卡盘顶部和支撑卡盘顶部的支撑构件。 在卡盘顶部和支撑构件之间形成空腔，并且在与晶片安装表面相对的一侧附接到卡盘顶表面的构件的最下部设置真空空间构件。
-
公开(公告)号：US20050263516A1
公开(公告)日：2005-12-01
申请号：US11140668
申请日：2005-05-27
IPC分类号： H05B3/20 , F27B17/00 , F27D11/00 , F27D99/00 , H01L21/00 , H01L21/02 , H01L21/66 , H01L21/68 , H01L21/683 , H05B3/06 , H05B3/10 , H05B3/74
CPC分类号： F27D99/0006 , F27B17/0025 , F27D2099/0008 , H01L21/67103
摘要： The present invention provides a heating device which is rigid with little likelihood of warping. The workpiece mounting surface has a high thermal conductivity, and there is improved heat uniformity, and rapid cooling is possible. The heating device of the present invention comprises: a mounting part for mounting the workpiece; a heating part which has a resistance heating element and which heats the mounting part; and a support part which supports the mounting part and heating part. The Young's modulus for each of the mounting part and support part is 100 GPa or greater. By having a Young's modulus of 100 GPa or greater, even if the mounting part is thin, there is little deformation when pressed by a probe card.
摘要翻译： 本发明提供一种加热装置，该加热装置具有几乎不变形的刚性。 工件安装面具有高导热性，并且具有改善的热均匀性，并且可以进行快速冷却。 本发明的加热装置包括：用于安装工件的安装部件; 加热部，其具有电阻加热元件，并加热所述安装部; 以及支撑安装部和加热部的支撑部。 每个安装部分和支撑部分的杨氏模量为100GPa或更大。 通过具有100GPa以上的杨氏模量，即使安装部分较薄，当由探针卡按压时几乎没有变形。
-
公开(公告)号：US06946625B2
公开(公告)日：2005-09-20
申请号：US10711064
申请日：2004-08-20
CPC分类号： H01L21/67103 , H05B3/143 , H05B3/265
摘要： Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.
摘要翻译： 其晶片保持面具有优异的等温性能，适用于半导体制造装置和液晶制造装置的陶瓷基座。 在板状烧结陶瓷体1中，形成电阻加热元件2。 烧结陶瓷体外周边缘1a和电阻加热元件本体外缘边缘2a之间的回拉长度L的波动在±0.8％以内，而晶片保持面的整个表面的等温额定值为±1.0 ％ 或更少。 优选的等温额定值为±0.5％以下，通过使拉回长度L的波动在±0.5％以内可以实现。
-
8.发明授权公开(公告)号：US06770379B2
公开(公告)日：2004-08-03
申请号：US10166778
申请日：2002-06-12
IPC分类号： B21D3900
CPC分类号： C04B35/581 , B32B37/12 , B32B2315/02 , C04B35/111 , C04B35/6263 , C04B35/62655 , C04B35/62695 , C04B35/6342 , C04B35/638 , C04B37/005 , C04B37/006 , C04B41/009 , C04B41/5001 , C04B41/85 , C04B2235/3206 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3418 , C04B2235/36 , C04B2235/3865 , C04B2235/3895 , C04B2235/449 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/5481 , C04B2235/602 , C04B2235/6021 , C04B2235/6025 , C04B2235/604 , C04B2235/608 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/85 , C04B2235/94 , C04B2235/9607 , C04B2235/9615 , C04B2235/963 , C04B2235/9638 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/343 , C04B2237/366 , C04B2237/66 , C04B2237/72 , C23C16/4581 , C30B25/12 , C30B31/14 , Y10S428/901 , Y10T428/12542 , Y10T428/12549 , Y10T428/24926 , Y10T428/252 , Y10T428/30 , C04B41/4531 , C04B41/53 , B32B18/00
摘要： A susceptor for semiconductor manufacturing equipment obtained by laminating plural aluminum nitride (AlN) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (AlN) ceramic substrate contains a compound of a Group 3a element in an amount of from 0.01 to 1% by weight in terms of the element, and the balance consisting essentially of aluminum nitride (AlN), in which the average particle size of an AlN crystal is from 2 to 5 &mgr;m. The susceptor is prepared by obtaining substrates from a mixture of the material powders through the steps of molding, sintering in a non-oxidizing atmosphere at 1,600 to 2,000° C. and forming into a desired substrate shape, and then laminating a plurality of the thus obtained substrate with a high melting point metallic layer and an adhesive layer inserted between the substrates, firing the laminate in a non-oxidizing atmosphere at 1,500 to 1,700° and finishing the fired laminate.
摘要翻译： 通过层叠多个具有高熔点金属层和粘合剂层的氮化铝（AlN）陶瓷基板，特别是氮化铝（AlN）陶瓷基板而获得的用于半导体制造设备的感受体包含第3a族元素的化合物 0.01〜1重量％，余量基本上由氮化铝（AlN）组成，其中AlN晶体的平均粒径为2-5μm。 通过以下步骤从材料粉末的混合物中获得基材来制备感受体，所述方法是在1600-2000℃的非氧化性气氛中进行成型，烧结并形成所需的基材形状，然后层压多个 得到的基材具有高熔点金属层和粘合剂层，插入在基板之间，在非氧化性气氛中烧结层压体为1500〜1700°，并对烧成的层叠体进行精加工。
-
公开(公告)号：US06664515B2
公开(公告)日：2003-12-16
申请号：US10119778
申请日：2002-04-11
IPC分类号： H05B368
CPC分类号： H01L21/67103 , H05B3/143 , H05B3/283
摘要： A technology that achieves a highly uniform temperature distribution on the surface of large-area semiconductor wafers and substrates for liquid crystals without prior measurement of the resistance-heating-element circuit and subsequent adjustment of the value of resistance. At least one current-receiving point 4 and at least one current-releasing point 5 are provided at the central portion of an insulating substrate 1. One or more resistance-heating-element circuits 2 are embedded in the insulating substrate spirally or pseudospirally from the central portion including the current-receiving point 4 to the peripheral portion of the insulating substrate 1. All the circuits merge with one another at the outermost portion. One or more resistance-heating-element circuits are separated at the outermost portion of the resistance-heating-element circuits and are formed spirally or pseudospirally from the outermost portion to the central portion including the current-releasing point 5.
-
公开(公告)号：US06500052B2
公开(公告)日：2002-12-31
申请号：US09964997
申请日：2001-09-26
IPC分类号： B24B100
CPC分类号： B24B29/00 , B24B7/22 , G03G15/2053 , Y10T428/24355 , Y10T428/24413 , Y10T428/2495 , Y10T428/24967 , Y10T428/26 , Y10T428/266 , Y10T428/268
摘要： The circumferential edge portion of a ductile rotating body containing abrasive grains is used to polish the surface of a ceramic substrate. The angle &thgr; formed between the polishing direction D0 of the ceramic substrate and the rotating direction D1, of the rotating body is set in the range from 10° to 80° for the polishing step. Alternatively, the polishing process is divided into at least two steps. and the average grain size of abrasive grains is reduced stepwise in the successive steps of the polishing process. According to this method, the surface of a large-area and thin ceramic substrate can be polished without damage, and a smooth polished ceramic surface can be provided. This method is particularly suitable for polishing a ceramic substrate having a thickness of at most 2.0 mm, and the resulting polished ceramic substrate is suitable for a ceramic heater in a thermal fixation device for fixing a toner image.
摘要翻译： 含有磨粒的韧性旋转体的圆周边缘部分用于抛光陶瓷基体的表面。 在研磨步骤中，将陶瓷基板的研磨方向D0与旋转体的旋转方向D1之间形成的角度θ设定在10°〜80°的范围内。 或者，将抛光处理分为至少两个步骤。 在研磨过程的连续步骤中，磨粒的平均粒径逐步降低。 根据该方法，可以在不损坏的情况下抛光大面积且薄的陶瓷基板的表面，并且可以提供光滑的抛光陶瓷表面。 该方法特别适合于研磨厚度至多为2.0mm的陶瓷基板，所得到的抛光陶瓷基板适用于用于定影调色剂图像的热固定装置中的陶瓷加热器。
-
-
-
-
-
-
-
-
-
搜索结果
108 条记录 (耗时 0.027 秒)
