公开(公告)号：US5868832A

公开(公告)日：1999-02-09

申请号：US828508

申请日：1997-03-31

Applicant: Michael Colin Begg

Inventor： Michael Colin Begg

IPC: H01F7/20 ,  C30B15/30 ,  H01F13/00 ,  C30B15/20

CPC classification number: C30B15/305 ,  H01F13/00 ,  Y10S117/917 ,  Y10T117/1032

Abstract: Magnetic field generating apparatus comprises a pair of axially spaced coils which are so arranged that when energized, they produce a magnetic field which has a zero axial field or substantially zero axial field at an axial position midway between the coils. The annular space between the coils is filled with a material such as steel or steel with a layer of material magnetized in the radial direction, which enhances the radial field strength generated by the coils. The apparatus as application in the growth of single crystals of semiconductor material.

Abstract translation: 磁场产生装置包括一对轴向间隔的线圈，其被布置成当被激励时，它们产生磁场，该磁场在线圈之间的中间的轴向位置处具有零轴向场或基本上为零的轴向场。 线圈之间的环形空间填充有诸如钢或钢的材料，其具有沿径向磁化的材料层，这增强了线圈产生的径向场强。 该装置在半导体材料单晶生长中的应用。

公开(公告)号：US5817176A

公开(公告)日：1998-10-06

申请号：US634017

申请日：1996-04-17

Applicant: Hyung-Jin Sung ,  Jung-Il Choi

Inventor： Hyung-Jin Sung ,  Jung-Il Choi

IPC: C30B15/00 ,  C30B15/30 ,  C30B35/00

CPC classification number: C30B29/06 ,  C30B15/305 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: The present invention relates to an apparatus for preparing a single crystal of silicon by which a high-quality single crystal of silicon can be prepared by changing the rotation rate of a crucible or a seed and a process for preparing a single crystal of silicon thereby. As compared with a conventional apparatus employing Czochralski method, which comprises a rotating axis of seed, a seed, a crucible, a heater, a rotary axis of crucible, a chamber and an adiabatic layer, the apparatus of the present invention is characterized by the improvement comprising means for controlling the rotation rate of the crucible or the seed, each of which consists of a D.C. voltage, a function generator, a voltage summing circuit and a stepping motor.

Abstract translation: 本发明涉及通过改变坩埚或种子的旋转速率以及由此制备硅单晶的方法来制备硅单晶的装置，通过该装置可以制备高质量的硅单晶。 与使用切克劳斯基法的常规装置相比，其包括种子的旋转轴，种子，坩埚，加热器，坩埚的旋转轴，室和绝热层，本发明的装置的特征在于， 改进包括用于控制坩埚或种子的旋转速率的装置，每个装置由直流电压，功能发生器，电压求和电路和步进电机组成。

公开(公告)号：US5359959A

公开(公告)日：1994-11-01

申请号：US953918

申请日：1992-09-30

Applicant: Izumi Fusegawa ,  Hirotoshi Yamagishi

Inventor： Izumi Fusegawa ,  Hirotoshi Yamagishi

IPC: C30B15/20 ,  C30B15/30 ,  C30B30/04 ,  H01L21/208 ,  C30B15/22

CPC classification number: C30B15/305 ,  Y10S117/917

Abstract: A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the speed of revolution of the quartz glass crucible and varying the intensity of the magnetic field applied to the melt according to the length of pull-up of the single crystal rod.

Abstract translation: 通过在施加磁场的情况下提起保持在石英玻璃坩埚中的半导体熔体的方法，制造在长度方向上具有受控氧浓度分布的半导体单晶棒，该方法的特征在于固定转速 石英玻璃坩埚，并根据单晶棒的上拉长度改变施加到熔体的磁场的强度。

公开(公告)号：US5215620A

公开(公告)日：1993-06-01

申请号：US814040

申请日：1991-12-24

Applicant: Yoshihiro Kodama ,  Tetsuya Ishidaira ,  Koji Kanno ,  Shin-ichi Furuse

Inventor： Yoshihiro Kodama ,  Tetsuya Ishidaira ,  Koji Kanno ,  Shin-ichi Furuse

IPC: C30B15/00 ,  C30B15/30

CPC classification number: C30B29/06 ,  C30B15/305

Abstract: This is a new method for pulling a silicon single crystal. When the silicon single crystal is pulled from a quartz crucible which is provided with a rotation rate more than zero, exclusive of zero rpm according to the Czochralski process, a reference rotation rate of the quartz crucible is controlled by a predetermined program. This method is characterized in that a pulse-like increase or decrease in a rotation rate is superimposed to the reference rotation rate and differences in and cycles of the rotation rate are set by the predetermined program.

Abstract translation: 这是一种拉取硅单晶的新方法。 当从具有大于零的旋转速率的石英坩埚中拉出硅单晶时，除了根据切克劳斯基（Czochralski）工艺的零转速以外，通过预定程序控制石英坩埚的参考旋转速率。 该方法的特征在于，将旋转速度的脉冲状增加或减小与参考旋转速率重叠，并且通过预定程序来设定旋转速度的差异和周期。

公开(公告)号：US4609425A

公开(公告)日：1986-09-02

申请号：US606020

申请日：1984-05-02

Applicant: Dieter W. Mateika ,  Rolf Laurien

Inventor： Dieter W. Mateika ,  Rolf Laurien

IPC: C30B15/12 ,  C30B15/00 ,  C30B15/10 ,  C30B15/18 ,  C30B15/30 ,  C30B29/28 ,  F27B14/06 ,  F27B14/10 ,  C30B15/24

CPC classification number: C30B15/305 ,  C30B15/00 ,  C30B15/10 ,  C30B15/18 ,  C30B29/28 ,  Y10T117/1052

Abstract: A cold crucible system and method for melting and crystallizing non-metallic inorganic compounds having a crucible, the side and the bottom of which are formed of metal pipes through which a cooling medium flows and independently excitable induction coils surrounding the side wall and the bottom of the crucible for coupling high energy into non-metallic inorganic compound present in said crucible and thus to melt said compound in said crucible, a member formed of an electrically conductive material and inert to any of said melt present in said crucible positioned at a distance above the bottom of the crucible and a container, opened at the top, lowered so as to project from the melt formed in the crucible, provided with apertures for the flow of the melt, and so positioned so as to contain up to 25% of the contents of the crucible.

Abstract translation: 一种冷坩埚系统和熔融结晶非金属无机化合物的方法，所述无机化合物具有坩埚，所述坩埚的侧面和底部由金属管形成，所述金属管通过所述金属管形成，所述金属管通过所述金属管形成，所述金属管通过所述金属管形成，所述金属管围绕所述侧壁和底部 用于将高能量耦合到存在于所述坩埚中的非金属无机化合物并因此熔化所述坩埚中的所述化合物的坩埚，由导电材料形成的构件，并且位于所述坩埚中存在的任何所述熔体中，所述熔体位于所述坩埚 坩埚的底部和在顶部开口的容器下降，以便从形成在坩埚中的熔体突出设置有用于熔体流动的孔，并且定位成容纳高达25％的 坩埚的内容物

公开(公告)号：US2743200A

公开(公告)日：1956-04-24

申请号：US43279254

申请日：1954-05-27

Applicant: BELL TELEPHONE LABOR INC

Inventor： HANNAY NORMAN B

IPC: C30B15/00 ,  C30B15/30

CPC classification number: C30B29/06 ,  C30B15/305 ,  Y10S438/925

公开(公告)号：US12037699B2

公开(公告)日：2024-07-16

申请号：US18298713

申请日：2023-04-11

Applicant: GlobalWafers Co., Ltd.

Inventor： Gaurab Samanta ,  Parthiv Daggolu ,  Sumeet Bhagavat ,  Soubir Basak ,  Nan Zhang

IPC: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

公开(公告)号：US20230250551A1

公开(公告)日：2023-08-10

申请号：US18298713

申请日：2023-04-11

Applicant: GlobalWafers Co., Ltd.

Inventor： Gaurab Samanta ,  Parthiv Daggolu ,  Sumeet Bhagavat ,  Soubir Basak ,  Nan Zhang

IPC: C30B15/20 ,  C30B29/06 ,  C30B15/30 ,  C30B15/10 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B29/06 ,  C30B15/305 ,  C30B15/10 ,  C30B15/30 ,  C30B30/04

Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

公开(公告)号：US11668020B2

公开(公告)日：2023-06-06

申请号：US17380393

申请日：2021-07-20

Applicant: GlobalWafers Co., Ltd.

Inventor： Gaurab Samanta ,  Parthiv Daggolu ,  Sumeet Bhagavat ,  Soubir Basak ,  Nan Zhang

IPC: C30B15/20 ,  C30B29/06 ,  C30B15/30 ,  C30B15/10 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

公开(公告)号：US09617655B2

公开(公告)日：2017-04-11

申请号：US13997722

申请日：2011-12-26

Applicant: Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

Inventor： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

IPC: C30B15/20 ,  C30B29/36 ,  C30B15/14 ,  C30B17/00 ,  C30B15/30

CPC classification number: C30B15/20 ,  C30B15/14 ,  C30B15/30 ,  C30B15/305 ,  C30B17/00 ,  C30B29/36 ,  Y10T117/1068

Abstract: An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1−T)×D2/R>1.5  (1) where, D1 is defined by Formula (2) and D2 by Formula (3): D1=503292×(1/(f×σc×μc))1/2  (2) D2=503292×(1/(f×σs×μs))1/2  (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs is relative permeability of the SIC solution.