公开(公告)号：US5980630A

公开(公告)日：1999-11-09

申请号：US81665

申请日：1998-05-20

Applicant: Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

Inventor： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

IPC: C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00

CPC classification number: C30B15/305 ,  Y10S117/917 ,  Y10T117/1068

Abstract: In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.

Abstract translation: 在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出 熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。 通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是 通过中心部分Cm或者低于该部分。 与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

公开(公告)号：US5785758A

公开(公告)日：1998-07-28

申请号：US777670

申请日：1996-12-20

Applicant: Hirotoshi Yamagishi ,  Kiyotaka Takano ,  Masanori Kimura

Inventor： Hirotoshi Yamagishi ,  Kiyotaka Takano ,  Masanori Kimura

IPC: C30B15/14 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC classification number: C30B15/14 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1072

Abstract: In a single crystal growing apparatus which pulls a semiconductor single crystal rod 14 from a semiconductor melt 13 contained in a quartz crucible 5 to grow the semiconductor single crystal, quartz crucible 5 is designed such that it can move up and down so as to maintain the level of semiconductor melt 13 constant and a main heater 7 which can move up and down and a subheater 10 which can move up and down are provided to heat semiconductor melt 13 so that the thermal environment of semiconductor melt 13 is maintained substantially constant.

Abstract translation: 在从包含在石英坩埚5中的半导体熔融物13拉出半导体单晶棒14以生长半导体单晶的单晶生长装置中，石英坩埚5被设计成能够上下移动，以保持 提供半导体熔体13的恒定水平和可上下移动的主加热器7以及可上下移动的副加热器10以加热半导体熔体13，使得半导体熔体13的热环境保持基本恒定。

公开(公告)号：US5462010A

公开(公告)日：1995-10-31

申请号：US961182

申请日：1992-10-14

Applicant: Kiyotaka Takano ,  Izumi Fusegawa ,  Hirotoshi Yamagishi ,  Koji Mizuishi ,  Katsuhiko Ogino

Inventor： Kiyotaka Takano ,  Izumi Fusegawa ,  Hirotoshi Yamagishi ,  Koji Mizuishi ,  Katsuhiko Ogino

IPC: B01J4/02 ,  B01J8/00 ,  C30B15/02

CPC classification number: B01J8/002 ,  C30B15/02 ,  Y10T117/1056

Abstract: An apparatus for continuously supplying granular polycrystal silicon to a crucible of a semiconductor single crystal pulling apparatus, comprising a funnel-shaped tank having a relatively large capacity, a main hopper having a relatively small capacity and weight, a subhopper having an intermediate capacity and weight and providing a passage from said tank to said main hopper, and a weight sensor for detecting the weight of the main hopper, wherein the overall weight of the main hopper is measured to obtain the flow rate (supply rate) of the granular polycrystal silicon.

Abstract translation: 一种用于连续地向半导体单晶拉制装置的坩埚供应颗粒状多晶硅的装置，包括具有相对较大容量的漏斗形罐，具有相对较小容量和重量的主料斗，具有中等容量和重量的踢脚板 并且从所述罐提供到所述主料斗的通道，以及用于检测主料斗重量的重量传感器，其中测量主料斗的总重量以获得颗粒状多晶硅的流量（供给速率）。

公开(公告)号：US5361721A

公开(公告)日：1994-11-08

申请号：US012172

申请日：1993-02-02

Applicant: Kiyotaka Takano ,  Izumi Fusegawa ,  Hirotoshi Yamagishi

Inventor： Kiyotaka Takano ,  Izumi Fusegawa ,  Hirotoshi Yamagishi

IPC: C30B15/02 ,  C30B15/00 ,  C30B15/14 ,  C30B27/02 ,  H01L21/208 ,  C30B15/20

CPC classification number: C30B15/00 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1068

Abstract: A single crystal pulling apparatus of Czochralski technique type including (i) a cylindrical partition adapted to divide the surface portion of the melt into an inner part and an outer part, the former being where the single crystal is grown and the latter being where granular polycrystal material is supplied, (ii) a flat ring having heat reflecting and insulating property held horizontally above the melt, and (iii) a vertically shiftable purge tube suspended centrally into the heating chamber adapted to enter into the inner hole of the flat ring.

Abstract translation: Czochralski技术类型的单晶拉制装置包括（i）适于将熔体的表面部分分成内部和外部的圆柱形分隔件，前者是单晶生长的区域，后者是颗粒状多晶体 提供材料，（ii）具有热熔和绝缘性能的平坦环，其水平地保持在熔体上方，以及（iii）垂直移动的清洗管，其中心地悬置在加热室内，适于进入平环的内孔。

公开(公告)号：US5359959A

公开(公告)日：1994-11-01

申请号：US953918

申请日：1992-09-30

Applicant: Izumi Fusegawa ,  Hirotoshi Yamagishi

Inventor： Izumi Fusegawa ,  Hirotoshi Yamagishi

IPC: C30B15/20 ,  C30B15/30 ,  C30B30/04 ,  H01L21/208 ,  C30B15/22

CPC classification number: C30B15/305 ,  Y10S117/917

Abstract: A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the speed of revolution of the quartz glass crucible and varying the intensity of the magnetic field applied to the melt according to the length of pull-up of the single crystal rod.

Abstract translation: 通过在施加磁场的情况下提起保持在石英玻璃坩埚中的半导体熔体的方法，制造在长度方向上具有受控氧浓度分布的半导体单晶棒，该方法的特征在于固定转速 石英玻璃坩埚，并根据单晶棒的上拉长度改变施加到熔体的磁场的强度。

公开(公告)号：US5348893A

公开(公告)日：1994-09-20

申请号：US31119

申请日：1993-03-12

Applicant: Hirotoshi Yamagishi

Inventor： Hirotoshi Yamagishi

IPC: H01L21/304 ,  H01L21/322

CPC classification number: H01L21/02016 ,  H01L21/3046 ,  H01L21/3221

Abstract: A method for the impartation of a mechanical distortion to a semiconductor wafer by the collision of particles against the surface of the semiconductor wafer is disclosed which represses the pollution of the semiconductor wafer with impurities from the particles, permits effective removal of the impurities adhering to the surface of the semiconductor wafer, and allows the density of lattice defects imparted into the semiconductor wafer to be freely varied and controlled as desired. The method which effects the intentional impartation of lattice distortion to the surface of the semiconductor wafer by the collision of particles against the semiconductor wafer comprises molding a substance possessing a melting point of not higher than 30.degree. C. and exhibiting solubility in water into particles of a diameter in the range of from 0.001 to 1 mm and causing the particles to collide against the surface of the semiconductor wafer.

Abstract translation: 公开了一种通过颗粒与半导体晶片的表面碰撞来赋予半导体晶片的机械变形的方法，该方法利用来自颗粒的杂质来抑制半导体晶片的污染，从而有效地除去附着在半导体晶片上的杂质 并且允许根据需要自由地变化和控制赋予半导体晶片的晶格缺陷的密度。 通过颗粒与半导体晶片的碰撞，有效地对晶片畸变表面施加晶格畸变的方法包括将熔点不高于30℃并且在水中呈现溶解性的物质模塑成为 直径在0.001至1mm的范围内，并使颗粒与半导体晶片的表面碰撞。

公开(公告)号：US4956153A

公开(公告)日：1990-09-11

申请号：US242414

申请日：1988-09-09

Applicant: Hirotoshi Yamagishi ,  Izumi Fusegawa ,  Shuuji Yokota ,  Takao Abe

Inventor： Hirotoshi Yamagishi ,  Izumi Fusegawa ,  Shuuji Yokota ,  Takao Abe

IPC: C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  H01L21/18 ,  H01L21/208

CPC classification number: C30B15/14 ,  Y10S117/90 ,  Y10T117/1068

Abstract: An improved apparatus for growing a single crystal of semiconductor silicon by the Czochralski method which apparatus has a heat-resistant and heat-insulating covering board in direct contact with the upper ends of heat-insulating members surrounding a quartz glass silicon melting crucible and having a circular center opening, and a heat-resistant and heat-insulating tube having an outer diameter approximately equal to the diameter of the center opening in the covering board gas-tightly joined to an upwardly extending argon gas supplying conduit and extending downwardly from the joint of the top wall of a metal housing and the upwardly extending conduit and extending through the center opening in the covering board in such a manner that the single crystal during growing is coaxially surrounded thereby, the lower end thereof being at a height above and in the proximity of the surface of the melt in the crucible. The wafers cut from the silicon single crystal grown in the apparatus are substantially free of defects such as OISFs after a thermal oxidation treatment.

公开(公告)号：US5834322A

公开(公告)日：1998-11-10

申请号：US916291

申请日：1997-08-22

Applicant: Izumi Fusegawa ,  Hirotoshi Yamagishi ,  Nobuyoshi Fujimaki ,  Yukio Karasawa

Inventor： Izumi Fusegawa ,  Hirotoshi Yamagishi ,  Nobuyoshi Fujimaki ,  Yukio Karasawa

IPC: C30B33/02 ,  C30B15/00 ,  C30B29/06 ,  C30B33/00 ,  H01L21/322

CPC classification number: C30B15/00 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L21/3225

Abstract: The method of this invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150.degree. C. to 1,280.degree. C. a wafer cut out of the Si single crystal thereby producing a Si wafer excellent in oxide film dielectric breakdown voltage characteristic due to elimination of crystal defects. Consequently, this invention ensures production of LSI in a high yield.

Abstract translation: 本发明的热处理方法，用于以不低于0.8mm /分钟的拉伸速度通过切克劳斯基法生长的Si单晶进行热处理，其特征在于在1150℃的温度下进行热处理。 从Si单晶切出的晶片，由此产生由于消除晶体缺陷而具有优异的氧化膜介电击穿电压特性的Si晶片。 因此，本发明能够高效率地制造LSI。

公开(公告)号：US5735951A

公开(公告)日：1998-04-07

申请号：US673590

申请日：1996-07-01

Applicant: Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Koji Mizuishi ,  Hirotoshi Yamagishi

Inventor： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Koji Mizuishi ,  Hirotoshi Yamagishi

IPC: C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC classification number: C30B15/00 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1032 ,  Y10T117/1068

Abstract: A single crystal pulling apparatus which eliminates trouble caused by an isolation valve heated to a high temperature uses a heat insulation plate provided below the isolation valve. The heat insulation plate is operated synchronously with the opening or closing of the isolation valve. The heat insulation plate prevents hot gases from coming from the lower chamber from coming into direct contact with the isolation valve. The prevention of overheating of the isolation valve provides for smooth operation and growth of a good quality single crystal.

Abstract translation: 消除由加热到高温的隔离阀引起的麻烦的单晶拉制装置使用设置在隔离阀下方的隔热板。 绝热板与隔离阀的打开或关闭同步运行。 隔热板防止来自下部室的热气体与隔离阀直接接触。 防止隔离阀过热，提供良好的单晶的平稳运行和生长。

公开(公告)号：US5720809A

公开(公告)日：1998-02-24

申请号：US510436

申请日：1995-08-02

Applicant: Eiichi Iino ,  Kiyotaka Takano ,  Izumi Fusegawa ,  Hirotoshi Yamagishi

Inventor： Eiichi Iino ,  Kiyotaka Takano ,  Izumi Fusegawa ,  Hirotoshi Yamagishi

IPC: C30B15/02 ,  C30B15/12 ,  C30B29/06

CPC classification number: C30B15/02 ,  C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

Abstract: A double-wall crucible is disclosed which is constructed by coaxially disposing a cylindrical partition wall in an outer crucible for holding a molten mass of silicon as a raw material and operated by heating the outer crucible and meanwhile supplying the raw material silicon to the gap between the outer crucible and the cylindrical partition wall and introducing the consequently produced molten mass of silicon to the interior of the cylindrical partition wall through a passage below the level of the molten mass of silicon interconnecting the outer crucible and the inner side of the cylindrical partition wall and meanwhile pulling a single crystal bar from the molten mass of silicon in the cylindrical partition wall. In this double-wall crucible, at least the cylindrical partition wall is formed of quartz glass having a hydroxyl group (OH group) content of not more than 30 ppm. In the crucible of this invention, the produced silicon single crystal enjoys improved quality and the operation of pulling enjoys enhanced yield because the cylindrical partition wall is softened or deformed only sparingly by the intense heat emanating from the molten mass of silicon. Since the cylindrical partition wall does not readily soften or deform on exposure to the heat, the partition wall can be fixed in place with a simple construction and the whole apparatus for the operation of pulling enjoys simplicity of construction and low cost of production.

Abstract translation: 公开了一种双壁坩埚，其通过在外坩埚中同轴设置圆筒形分隔壁而构成，用于将硅熔体作为原料保持，并通过加热外坩埚进行操作，同时将原料硅供应到 外坩埚和圆柱形分隔壁，并将由此产生的硅熔融物质通过下列通道引导到圆筒形分隔壁的内部，该通道位于将外坩埚与圆柱形分隔壁的内侧相互连接的熔融物质层的下方 同时从圆柱形分隔壁的硅熔融体中拉出单晶棒。 在该双壁坩埚中，至少圆筒形分隔壁由羟基（OH基）含量为30ppm以下的石英玻璃构成。 在本发明的坩埚中，所生产的硅单晶具有改进的质量，并且由于由熔融硅团发出的强烈热量，圆柱形分隔壁被轻微软化或变形，所以拉伸操作具有提高的产量。 由于圆柱形分隔壁在暴露于热量时不容易软化或变形，因此能够以简单的结构将分隔壁固定就位，并且用于拉动操作的整个装置具有简单的结构和低成本的生产。