公开(公告)号：US20200035454A1

公开(公告)日：2020-01-30

申请号：US16595339

申请日：2019-10-07

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01J37/32

Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

公开(公告)号：US10131994B2

公开(公告)日：2018-11-20

申请号：US13666245

申请日：2012-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger, Jr. ,  Ankur Agarwal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: C23C16/00 ,  H01L21/306 ,  C23F1/08 ,  C23C14/28 ,  H01J37/32 ,  H05H1/46 ,  B01J12/00

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.

公开(公告)号：US10103010B2

公开(公告)日：2018-10-16

申请号：US15951540

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Olivier Luere ,  Leonid Dorf ,  Rajinder Dhindsa ,  Sunil Srinivasan ,  Denis M. Koosau ,  James Rogers

IPC: H01J37/32

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a first ring having a top surface and a bottom surface, an adjustable tuning ring having a top surface and a bottom surface, and an actuating mechanism. The bottom surface is supported by a substrate support member. The bottom surface at least partially extends beneath a substrate supported by the substrate support member. The adjustable tuning ring is positioned beneath the first ring. The top surface of the adjustable tuning ring and the first ring define an adjustable gap. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to alter the adjustable gap defined between the bottom surface of the first ring and the top surface of the adjustable tuning ring.

公开(公告)号：US09947517B1

公开(公告)日：2018-04-17

申请号：US15382004

申请日：2016-12-16

Applicant: Applied Materials, Inc.

Inventor： Olivier Luere ,  Leonid Dorf ,  Rajinder Dhindsa ,  Sunil Srinivasan ,  Denis M. Koosau ,  James Rogers

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32522 ,  H01J2237/006 ,  H01J2237/334

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a first ring having a top surface and a bottom surface, an adjustable tuning ring having a top surface and a bottom surface, and an actuating mechanism. The bottom surface is supported by a substrate support member. The bottom surface at least partially extends beneath a substrate supported by the substrate support member. The adjustable tuning ring is positioned beneath the first ring. The top surface of the adjustable tuning ring and the first ring define an adjustable gap. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to alter the adjustable gap defined between the bottom surface of the first ring and the top surface of the adjustable tuning ring.

公开(公告)号：US20180053630A1

公开(公告)日：2018-02-22

申请号：US15793802

申请日：2017-10-25

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhijang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

公开(公告)号：US20170350018A1

公开(公告)日：2017-12-07

申请号：US15685787

申请日：2017-08-24

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger ,  Ankur Agarwal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: C23F1/08 ,  C23C14/28 ,  B01J12/00 ,  H05H1/46 ,  H01J37/32

CPC classification number: C23F1/08 ,  B01J12/002 ,  C23C14/28 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32733 ,  H01J37/32834 ,  H05H1/46

Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.

公开(公告)号：US09721760B2

公开(公告)日：2017-08-01

申请号：US13912488

申请日：2013-06-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Nipun Misra ,  Gonzalo Antonio Monroy ,  James D. Carducci ,  Steven Lane

IPC: H05H1/02 ,  H01J37/32 ,  H05H1/50

CPC classification number: H01J37/3233 ,  H01J37/3266 ,  H05H1/50

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination.

公开(公告)号：US20160276134A1

公开(公告)日：2016-09-22

申请号：US14660531

申请日：2015-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01J37/32

Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.

Abstract translation: 具有顶部电子束源的反应器能够产生用于进行原子层蚀刻工艺的离子离子等离子体。

公开(公告)号：US09378941B2

公开(公告)日：2016-06-28

申请号：US14064933

申请日：2013-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Aneesh Nainani ,  Bhushan N. Zope ,  Leonid Dorf ,  Shahid Rauf ,  Adam Brand ,  Mathew Abraham ,  Subhash Deshmukh

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/768 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/8238 ,  H01L21/8258

CPC classification number: H01L21/02063 ,  H01J37/3233 ,  H01L21/02057 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/76814 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L29/66795

Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.

Abstract translation: 电子束等离子体源用于含有Ge或III-V族化合物半导体材料的半导体表面的软等离子体表面处理。

公开(公告)号：US09269546B2

公开(公告)日：2016-02-23

申请号：US13945200

申请日：2013-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming-Feng Wu ,  Ajit Balakrishna ,  Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3233

Abstract: Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.

Abstract translation: 电子束发生器的电子束约束电磁体与电子束轴线对准，每个电磁体被折叠以限定相对于所述主要部分以相应角度设置的主部分和一对成角度的翼部分，并且导体缠绕 围绕边缘。