ION-ION PLASMA ATOMIC LAYER ETCH PROCESS

Invention Application

US20200035454A1 ION-ION PLASMA ATOMIC LAYER ETCH PROCESS 审中-公开

Patent Title: ION-ION PLASMA ATOMIC LAYER ETCH PROCESS
Application No.: US16595339

Application Date: 2019-10-07
Publication No.: US20200035454A1

Publication Date: 2020-01-30
Inventor: Kenneth S. Collins , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Leonid Dorf , Yang Yang
Applicant: Applied Materials, Inc.
Main IPC: H01J37/32
IPC: H01J37/32

Abstract:

A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

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IPC分类:

H	电学
H01	基本电气元件
H01J	放电管或放电灯（火花隙入H01T；消耗电极的弧光灯入H05B；粒子加速器入H05H）
H01J37/00	有把物质或材料引入使受到放电作用的结构的电子管，例如为了对其检验或加工的（H01J33/00、H01J40/00、H01J41/00、H01J47/00、H01J49/00优先）
H01J37/32	.充气放电管（放电加热的入H05B）