公开(公告)号：US20170140903A1

公开(公告)日：2017-05-18

申请号：US14942673

申请日：2015-11-16

Applicant: AGC Flat Glass North America, Inc. ,  Asahi Glass Co., Ltd. ,  AGC Glass Europe S.A.

Inventor： John CHAMBERS ,  Peter MASCHWITZ

IPC: H01J37/32 ,  C23C16/50

CPC classification number: H01J37/32596 ,  C23C16/50 ,  H01J37/32568 ,  H01J37/32587

Abstract: A method of producing a plasma is provided. The method includes providing at least three hollow cathodes, including a first hollow cathode, a second hollow cathode, and a third hollow cathode. Each hollow cathode has a plasma exit region. The method further includes providing a source of power capable of producing multiple output waves, including a first output wave, a second output wave, and a third output wave. The first output wave and the second output wave are out of phase, the second output wave and the third output wave are out of phase, and the first output wave and the third output wave are out of phase. Each hollow cathode is electrically connected to the source of power such that the first hollow cathode is electrically connected to the first output wave, the second hollow cathode is electrically connected to the second output wave, and the third hollow cathode is electrically connected to the third output wave. Electrical current flows between the at least three hollow cathodes that are out of electrical phase. A plasma is generated between the hollow cathodes.

公开(公告)号：US08920597B2

公开(公告)日：2014-12-30

申请号：US13047052

申请日：2011-03-14

Applicant: Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

Abstract translation: 本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

公开(公告)号：US20100037821A1

公开(公告)日：2010-02-18

申请号：US12566205

申请日：2009-09-24

Applicant: Hiroshi NOGAMI

Inventor： Hiroshi NOGAMI

IPC: C23C16/50 ,  C23C16/00

CPC classification number: H01J37/32422 ,  C23C16/45565 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32587

Abstract: Disclosed is a vacuum processing apparatus in which a conducive partition having a plurality of through holes is formed inside a vacuum processing vessel, and an internal space of the vacuum processing vessel is partitioned into a plasma generating space in which a high-frequency electrode is installed to function as a counter electrode with respect to the partition, and a substrate processing space in which a substrate is set. This vacuum processing apparatus includes a gas reservoir formed on a sidewall of the vacuum processing vessel and communicating with the plasma generating space, and a gas supply system connected to the gas reservoir to supply a gas to the gas reservoir.

Abstract translation: 公开了一种真空处理装置，其中在真空处理容器内部形成具有多个通孔的导通隔板，并且将真空处理容器的内部空间分隔成其中安装有高频电极的等离子体产生空间 作为相对于隔板的对电极，以及设置有基板的基板处理空间。 该真空处理装置包括形成在真空处理容器的侧壁上并与等离子体产生空间连通的气体储存器，以及连接到气体储存器以向气体储存器供应气体的气体供应系统。

公开(公告)号：US20090239383A1

公开(公告)日：2009-09-24

申请号：US12406153

申请日：2009-03-18

Applicant: Youichirou AYA ,  Yasutaka KOBAYASHI

Inventor： Youichirou AYA ,  Yasutaka KOBAYASHI

IPC: H01L21/3065 ,  H01L21/30

CPC classification number: H01J37/32541 ,  H01J37/32009 ,  H01J37/32587

Abstract: Provided is a semiconductor device manufacturing method by which plasma processing can be performed uniformly on a substrate. A plasma processing apparatus according to one embodiment of the present invention includes an auxiliary electrode provided annularly along a periphery of the lower electrode on a lateral side of the lower electrode. When plasma processing is performed on a substrate S, a potential of the lower electrode is set lower than the potential of the upper electrode while a potential of the auxiliary electrode is set lower than a potential of the upper electrode.

Abstract translation: 提供了可以在基板上均匀地进行等离子体处理的半导体器件制造方法。 根据本发明的一个实施例的等离子体处理装置包括在下电极的侧面沿着下电极的周边环状设置的辅助电极。 当对基板S进行等离子体处理时，将下电极的电位设定为低于上电极的电位，同时将辅助电极的电位设定为低于上电极的电位。

公开(公告)号：US06620335B1

公开(公告)日：2003-09-16

申请号：US09455641

申请日：1999-12-07

Applicant: Stephen P. DeOrnellas ,  Leslie G. Jerde ,  Alferd Cofer ,  Robert C. Vail ,  Kurt A. Olson

Inventor： Stephen P. DeOrnellas ,  Leslie G. Jerde ,  Alferd Cofer ,  Robert C. Vail ,  Kurt A. Olson

IPC: H01L213065

CPC classification number: H01L21/02071 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32587 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32136 ,  H01L28/55 ,  H01L28/60

Abstract: A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the lower electrode 28 is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber 22 is configured with a solid source 50 of gaseous species and a protruding baffle 40. A nozzle 36 provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer 48. The configuration of the plasma etch reactor 20 enhances the range of densities for the plasma in the reactor 20, which range can be selected by adjusting more of the power supplies 30, 32.

公开(公告)号：US06190496B1

公开(公告)日：2001-02-20

申请号：US09384614

申请日：1999-08-27

Applicant: Stephen P. DeOrnellas ,  Alferd Cofer ,  Robert C. Vail

Inventor： Stephen P. DeOrnellas ,  Alferd Cofer ,  Robert C. Vail

IPC: H01L2100

CPC classification number: H01L21/02071 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32587 ,  H01J37/3266 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32136 ,  H01L28/55 ,  H01L28/60

Abstract: A plasma etch reactor 20 includes a reactor chamber 22 with a grounded upper electrode 24, a lower electrode 28 which is attached to a high frequency power supply 30 and a low frequency power supply 32, and a peripheral electrode 26 which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets 46, 47 are used to establish the magnetic field which confines the plasma developed within the reactor chamber 22. The plasma etch reactor 20 is capable of etching emerging films used with high density semiconductor devices.

Abstract translation: 等离子体蚀刻反应器20包括具有接地的上部电极24的反应室22，附接到高频电源30的低电极28和低频电源32以及位于上部电极之间的周边电极26 和下电极，并且其被允许具有浮动电位。 稀土磁体46,47用于建立限制在反应器室22内形成的等离子体的磁场。等离子体蚀刻反应器20能够蚀刻与高密度半导体器件一起使用的新颖薄膜。

公开(公告)号：US5362358A

公开(公告)日：1994-11-08

申请号：US61440

申请日：1993-05-14

Applicant: Yasushi Yamagata ,  Fumihide Sato

Inventor： Yasushi Yamagata ,  Fumihide Sato

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  B44C1/22

CPC classification number: H01J37/32192 ,  H01J37/32587 ,  H01J37/32678 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/76804

Abstract: In order to cyclically implement isotropical and anisotropical etching of an interlayer insulator provided in a semiconductor wafer, two variable capacitors are provided for applying RF bias (power) to a triode type dry etching apparatus. The two variable capacitors are controlled such that cyclically, as one of the two capacitors exhibits maximum capacitance thereof, the other capacitor exhibits minimum capacitance thereof. As an alternative to the above, a wafer supporting table provided in a reactive chamber of an electron cyclotron resonance type apparatus, is cyclically supplied with a radio frequency (RF) bias and the ground potential. This cyclic application of the RF bias and the ground potential is controlled by a combination of a pulse generator and an amplitude modulation circuit both coupled to an RF signal generator. The via hole is effectively formed using the cyclic operations of the isotropic and anisotropic etching.

Abstract translation: 为了周期性地实施设置在半导体晶片中的层间绝缘体的等温和各向异性蚀刻，提供了两个可变电容器，用于将三极管型干法蚀刻装置的RF偏压（功率）施加。 两个可变电容器被控制为使得循环地，由于两个电容器中的一个表现出最大电容，所以另一个电容器表现出最小的电容。 作为上述的替代，设置在电子回旋共振型装置的反应室中的晶片支撑台被周期性地提供射频（RF）偏置和地电位。 RF偏置和接地电位的这种循环应用由两个耦合到RF信号发生器的脉冲发生器和幅度调制电路的组合来控制。 使用各向同性和各向异性蚀刻的循环操作有效地形成通孔。

公开(公告)号：US5248371A

公开(公告)日：1993-09-28

申请号：US929099

申请日：1992-08-13

Applicant: Joseph A. Maher ,  Martin A. Kent

Inventor： Joseph A. Maher ,  Martin A. Kent

IPC: C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32541 ,  H01J37/32587 ,  H01J2237/3341

Abstract: Hollow-anode glow discharge apparatus in the form of two-electrode and three-electrode reactors provide, in various embodiments, improved uniformity, efficiency and low-pressure substrate surface processing. In one improved uniformity embodiment for ion-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, multi-sized and evenly-spaced holes. In one improved uniformity embodiment for chemically-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, evenly-spaced holes and a stepped or continuously-variable non-planar profile. In one improved low pressure embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density grid having multiple, evenly-sized and spaced holes of widths large enough to overcome dark space effects. In one improved efficiency selected ion energy embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density source that synergistically cooperates with an apertured grid to provide selected-energy ions at higher densities than heretofore possible. In any embodiment, both build-up on and removal from the substrate are possible.

Abstract translation: 双电极和三电极电抗器形式的空心 - 阳极辉光放电装置在各种实施例中提供改进的均匀性，效率和低压衬底表面处理。 在用于离子主导的工艺的一个改进的均匀性实施例中，本发明的装置包括具有多个多尺寸和均匀间隔的孔的高能量密度均匀化栅格。 在用于化学主导的方法的一个改进的均匀性实施方案中，本发明的装置包括具有多个均匀间隔的孔和高阶能量密度均匀化网格以及阶梯式或连续可变的非平面轮廓。 在用于离子主导和/或化学主导的方法的一个改进的低压实施例中，本发明的装置包括具有多个均匀尺寸和间隔开的宽度足够大以克服暗空间效应的孔的高能量密度栅格。 在用于离子主导和/或化学主导的方法的一种改进的效率选择的离子能量实施方案中，本发明的装置包括高能密度源，其与有孔网格协同地配合以提供更高密度的选择能量离子 以前可能的。 在任何实施例中，可以在基板上积聚和从基板移除两者。

公开(公告)号：US4349409A

公开(公告)日：1982-09-14

申请号：US262793

申请日：1981-05-11

Applicant: Hikou Shibayama ,  Tetsuya Ogawa ,  Makoto Kosugi ,  Tokushige Hisatsugu ,  Koichi Kobayashi

Inventor： Hikou Shibayama ,  Tetsuya Ogawa ,  Makoto Kosugi ,  Tokushige Hisatsugu ,  Koichi Kobayashi

IPC: H01J37/32 ,  H01J37/34 ,  H01L21/311 ,  H01L21/302 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC classification number: H01J37/32623 ,  H01J37/32568 ,  H01J37/32587 ,  H01J37/34 ,  H01J37/3438 ,  H01L21/31116

Abstract: A method and an apparatus for plasma etching semiconductor materials by providing an intermediate electrode between the electrodes in a parallel state type plasma etching apparatus, moving the intermediate electrode by a drive mechanism, and continuously changing from a condition of high input power and high self-bias voltage to a condition of low input power and low self-bias voltage while varying the distance between the intermediate electrode and the first electrode and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the semiconductor material was being subjected to processing.

Abstract translation: 一种等离子体蚀刻半导体材料的方法和装置，其通过在并联状态型等离子体蚀刻装置中的电极之间设置中间电极，通过驱动机构使中间电极移动，并且从输入功率高， 将偏置电压改变为低输入功率和低自偏压的状态，同时改变中间电极和第一电极之间的距离以及RF功率，从而去除当半导体材料上可能已经形成在表面上的损伤或沉积物 正在受到处理。

公开(公告)号：US11935724B2

公开(公告)日：2024-03-19

申请号：US18168421

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.