公开(公告)号：US06319761B1

公开(公告)日：2001-11-20

申请号：US08897363

申请日：1997-07-21

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L2184

CPC分类号： H01L21/02667 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/2022 ,  H01L27/1214 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S148/154

摘要： Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystallinity is obtained. TFTs are built, using this crystalline silicon film.

摘要翻译： 制造TFT的方法首先在形成在基板上的底层上选择性地形成镍膜。 在镍膜上形成非晶硅膜并加热使其结晶。 用红外光照射结晶膜使其退火。 因此，得到结晶性优异的结晶硅膜。 使用这种晶体硅膜构建TFT。

公开(公告)号：US6093587A

公开(公告)日：2000-07-25

申请号：US26888

申请日：1998-02-19

申请人： Hisashi Ohtani

发明人： Hisashi Ohtani

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016

摘要： A method of manufacturing a crystalline silicon film excellent in crystallinity. When using elements such as nickel as metal elements that promotes the crystallization of the amorphous silicon film, nickel is allowed to be contained in a solution repelled by the surface of the amorphous silicon film. Then, a part of the amorphous silicon film is removed, and the solution is held in only that part. In this way, the nickel elements are selectively introduced into a part of the amorphous silicon film, and a heat treatment is also conducted to allow crystal growth to proceed from that portion toward a direction parallel to a substrate.

摘要翻译： 一种制造结晶度优异的结晶硅膜的方法。 当使用诸如镍的元素作为促进非晶硅膜的结晶的金属元素时，允许镍被包含在由非晶硅膜的表面排斥的溶液中。 然后，去除非晶硅膜的一部分，并且溶液仅保持在该部分。 以这种方式，镍元素被选择性地引入到非晶硅膜的一部分中，并且还进行热处理以允许晶体生长从该部分朝向平行于衬底的方向进行。

公开(公告)号：US6071764A

公开(公告)日：2000-06-06

申请号：US496085

申请日：1995-06-28

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L21/3221 ,  H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/004 ,  Y10S148/016 ,  Y10S148/06

摘要： After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed.After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

摘要翻译： 在通过退火结晶的硅膜上转移图案后，通过强烈射线的辐射短时间对硅膜进行退火。 特别是在通过退火的结晶工艺中，掺杂促进结晶的元素如镍掺杂。 通过退火而未结晶的区域也通过强烈射线的辐射而结晶，形成冷凝的硅膜。 在掺杂促进结晶的金属元素之后，通过在含有卤化物的气氛中退火而结晶化的硅膜上发射强光，进行短时间的光退火。 在硅膜的表面通过加热或通过在卤化气氛中辐射强射线而被氧化并且在硅膜上形成氧化物膜之后，然后蚀刻氧化膜。 结果，硅膜中的镍被去除。

公开(公告)号：US5773329A

公开(公告)日：1998-06-30

申请号：US685728

申请日：1996-07-24

申请人： Yue Kuo

发明人： Yue Kuo

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L21/2026 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/665 ,  Y10S148/004 ,  Y10S148/016

摘要： A method of low temperature and rapid silicon crystallization or rapid transformation of amorphous silicon to high quality polysilicon over a large area is disclosed using a pulsed rapid thermal annealing (PRTA) method and a metal seed layer. The PRTA method forms polysilicon thin film transistors (TFTs) with a high throughput, on low temperature and large area glass substrates. The PRTA method includes the steps of forming over a glass layer a tri-layer structure having a layer of amorphous silicon sandwiched between bottom and top dielectric layers; selectively etching the top dielectric layer to expose portions of the amorphous silicon layer; forming a metal seed layer over the exposed portions of the amorphous silicon layer; and pulsed rapid thermal annealing using successive pulses separated by rest periods to transform the amorphous silicon layer to a polysilicon layer. In an alternate PRTA method, instead of forming the tri-layer structure, a bi-layer structure is formded over the glass layer. The bi-layer structure does not have the top dielectric layer of the tri-layer structure. The bi-layer structure includes dielectric and amorphous silicon layers.

摘要翻译： 使用脉冲快速热退火（PRTA）方法和金属种子层公开了低温快速硅结晶或在大面积上将非晶硅快速转化为高质量多晶硅的方法。 PRTA方法在低温和大面积玻璃基板上形成具有高产量的多晶硅薄膜晶体管（TFT）。 PRTA方法包括以下步骤：在玻璃层上形成具有夹在底部和顶部电介质层之间的非晶硅层的三层结构; 选择性地蚀刻顶部电介质层以暴露非晶硅层的部分; 在非晶硅层的暴露部分上形成金属籽晶层; 以及使用由休止周期分离的连续脉冲的脉冲快速热退火，以将非晶硅层转变为多晶硅层。 在替代的PRTA方法中，代替形成三层结构，在玻璃层上形成双层结构。 双层结构不具有三层结构的顶部电介质层。 双层结构包括电介质和非晶硅层。

公开(公告)号：US5712191A

公开(公告)日：1998-01-27

申请号：US525167

申请日：1995-09-08

申请人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/336 ,  H01L21/423 ,  H01L21/428

CPC分类号： H01L21/2026 ,  H01L21/423 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S148/093

摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

公开(公告)号：US5614426A

公开(公告)日：1997-03-25

申请号：US518318

申请日：1995-08-23

申请人： Fumiaki Funada ,  Tatsuo Morita ,  Hirohisa Tanaka ,  Hongyong Zhang ,  Toru Takayama

发明人： Fumiaki Funada ,  Tatsuo Morita ,  Hirohisa Tanaka ,  Hongyong Zhang ,  Toru Takayama

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L27/1277 ,  Y10S148/016 ,  Y10S438/982

摘要： In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having different characteristics are constituted by using crystalline silicon film whose crystal has grown in a direction parallel with a substrate. That is, an angle formed between a crystal growing direction and a carrier moving direction are made different from each other, thereby to control a resistance imposed on the carriers when moving to determine the characteristics of the TFT. For example, when the crystal growing direction coincides with the carrier moving direction, high mobility can be given to the carriers. Further, when the crystal growing direction is arranged perpendicular to the carrier moving direction, the off-state current can be lowered.

摘要翻译： 在有源矩阵型液晶显示装置中，在外围电路部分中，布置了具有高迁移率并且能够允许大量导通电流流动的TFT。 在像素部分中，布置有具有小截止电流的TFT。 具有不同特性的这些TFT通过使用晶体在与衬底平行的方向上生长的晶体硅膜来构成。 也就是说，使晶体生长方向和载流子移动方向之间形成的角度彼此不同，从而在移动时控制施加在载流子上的电阻以确定TFT的特性。 例如，当晶体生长方向与载流子移动方向一致时，可以赋予载流子高迁移率。 此外，当晶体生长方向垂直于载流子移动方向布置时，可以降低截止电流。

公开(公告)号：US5585291A

公开(公告)日：1996-12-17

申请号：US350114

申请日：1994-11-29

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Junichi Takeyama

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Junichi Takeyama

IPC分类号： H01L31/10 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/225

CPC分类号： H01L21/2026 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S438/918

摘要： A method for manufacturing a semiconductor device having a crystalline silicon semiconductor layer comprises the steps of heat crystallizing an amorphous silicon semiconductor layer at a relatively low temperature because of the use of a crystallization promoting material such as Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, P, As, and Sb. The crystallization promoting material is introduced by mixing it within a liquid precursor material for forming silicon oxide and coating the precursor material onto the amorphous silicon film. Thus, it is possible to add the crystallization promoting material into the amorphous silicon film at a minimum density.

摘要翻译： 制造具有晶体硅半导体层的半导体器件的方法包括以下步骤：由于使用结晶促进材料如Ni，Pd，Pt，Cu，Ag，在相对较低的温度下使非晶硅半导体层热结晶， Au，In，Sn，Pb，P，As和Sb。 将结晶促进材料通过将其混合在用于形成氧化硅的液体前体材料中并将前体材料涂覆到非晶硅膜上而引入。 因此，可以以最小的密度将结晶促进材料添加到非晶硅膜中。

公开(公告)号：US5488000A

公开(公告)日：1996-01-30

申请号：US260413

申请日：1994-06-14

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L27/12 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/00

CPC分类号： H01L27/1277 ,  H01L21/2022 ,  H01L27/1214 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S148/154

摘要： Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystailinity is obtained. TFTs are built, using this crystalline silicon film.

摘要翻译： 制造TFT的方法首先在形成在基板上的底层上选择性地形成镍膜。 在镍膜上形成非晶硅膜并加热使其结晶。 用红外光照射结晶膜使其退火。 因此，获得了具有优异结晶度的结晶硅膜。 使用这种晶体硅膜构建TFT。

公开(公告)号：US5147827A

公开(公告)日：1992-09-15

申请号：US711023

申请日：1991-06-06

申请人： Toyoji Chino ,  Kenichi Matsuda ,  Shibata Jun

发明人： Toyoji Chino ,  Kenichi Matsuda ,  Shibata Jun

IPC分类号： H01L21/469 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/02175 ,  H01L21/02241 ,  H01L21/02258 ,  H01L21/02282 ,  H01L21/31654 ,  H01L21/31679 ,  Y10S148/016

摘要： A device such as a phototransistor, a photodiode, a laser diode or the like including a compound semiconductor coated with a stable passivation film to reduce leakage current is disclosed. The passivation film includes oxygen, a metallic element and constituent elements of the device, and the concentration of the elements included in the passivation film changes gradually through the interface between the passivation film and the device. Such a passivation film is formed by the oxidation or anodic oxidation of a device soaked in an aqueous solution of hydrogen oxide containing metallic ions such as Fe.sup.2+, Fe.sup.3+, Cu.sup.+, Cu.sup.2+, Co.sup.2+ or Cr.sup.2+ under the control of the temperature of the solution.

摘要翻译： 公开了一种诸如光电晶体管，光电二极管，激光二极管等的装置，其包括涂覆有稳定钝化膜的化合物半导体以减少泄漏电流。 钝化膜包括氧，金属元素和器件的构成元件，并且钝化膜中包含的元素的浓度通过钝化膜和器件之间的界面逐渐变化。 这种钝化膜是通过在溶液温度控制下浸渍在含有金属离子如Fe2 +，Fe3 +，Cu +，Cu2 +，Co2 +或Cr2 +的氢氧化物水溶液中进行氧化或阳极氧化形成的。

公开(公告)号：US4526629A

公开(公告)日：1985-07-02

申请号：US610355

申请日：1984-05-15

申请人： Ernst-Eberhard Latta ,  Maria Ronay

发明人： Ernst-Eberhard Latta ,  Maria Ronay

IPC分类号： C01G33/00 ,  B01J23/00 ,  B01J23/10 ,  C01B13/14 ,  C01B13/32 ,  C01G1/00 ,  C23C8/10 ,  C23C8/12 ,  H01L21/316 ,  H01L39/24 ,  H01L21/363

CPC分类号： C23C8/12 ,  C23C8/10 ,  H01L21/31683 ,  H01L39/2493 ,  Y10S148/016 ,  Y10S148/089 ,  Y10S148/117 ,  Y10S148/118 ,  Y10S505/818

摘要： One or more monolayers of cerium arrayed on the surface of a niobium metal acts as a catalyst to oxidation of the niobium at ambient temperature and results in a very thin, very high quality insulating layer which may be configured by patterning of the catalyst. Significant amounts of Nb.sub.2 O.sub.5 are formed at pressures as low as 6.6.times.10.sup.-6 Pa, promoted by the presence of the cerium. This catalytic activity is related to the trivalent to tetravalent valence change of the cerium during oxidation. The kinetics of Nb.sub.2 O.sub.5 formation beneath the oxidized cerium shows two stages:the first stage is fast growth limited by ion diffusion;the second stage is slow growth limited by electron tunneling.Other catalytic rare earths usable instead of cerium are terbium and praseodymium; other substrate materials usable instead of niobium are aluminum, hafnium, silicon and tantalum, or oxidizable alloys thereof.

摘要翻译： 排列在铌金属表面上的一个或多个铈单层作为催化剂在环境温度下氧化铌，并产生非常薄的，非常高质量的绝缘层，其可以通过图案化催化剂来构造。 在铈的存在促进下，在低至6.6×10 -6 Pa的压力下形成显着量的Nb 2 O 5。 该催化活性与氧化期间铈的三价至四价的价态变化有关。 氧化铈下形成的Nb2O5的动力学分为两个阶段：第一阶段是离子扩散限制的快速生长; 第二阶段是受电子隧道效应限制的缓慢增长。 其他可用于代替铈的催化稀土是铽和镨; 可用于代替铌的其它基板材料是铝，铪，硅和钽，或其可氧化的合金。