公开(公告)号：US07998844B2

公开(公告)日：2011-08-16

申请号：US12219026

申请日：2008-07-15

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/22 ,  H01L21/38 ,  H01L21/31 ,  H01L21/469 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US06924213B2

公开(公告)日：2005-08-02

申请号：US10252393

申请日：2002-09-24

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/004 ,  Y10S148/016 ,  Y10S148/06

摘要： After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed.After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

摘要翻译： 在通过退火结晶的硅膜上转移图案后，通过强烈射线的辐射短时间对硅膜进行退火。 特别是在通过退火的结晶工艺中，掺杂促进结晶的元素如镍掺杂。 通过退火而未结晶的区域也通过强烈射线的辐射而结晶，形成冷凝的硅膜。 在掺杂促进结晶的金属元素之后，通过在含有卤化物的气氛中退火而结晶化的硅膜上发射强光，进行短时间的光退火。 在硅膜的表面通过加热或通过在卤化气氛中辐射强射线而被氧化并且在硅膜上形成氧化物膜之后，然后蚀刻氧化膜。 结果，硅膜中的镍被去除。

公开(公告)号：US5804473A

公开(公告)日：1998-09-08

申请号：US717811

申请日：1996-09-24

申请人： Yutaka Takizawa

发明人： Yutaka Takizawa

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L29/66765 ,  Y10S148/016

摘要： A method for fabricating a thin film semiconductor device includes the steps of introducing, into an amorphous film of a semiconductor material, at least one metallic element that forms an intermetallic compound with the semiconductor material and at least one nonmetallic element selected from group VIa elements, group VIIa elements or nitrogen, and crystallizing the amorphous film, after introducing the metallic element and the nonmetallic element, by a thermal annealing process, to convert the amorphous film to a crystalline film.

摘要翻译： 一种制造薄膜半导体器件的方法包括以下步骤：向半导体材料的非晶膜中引入至少一种与半导体材料形成金属间化合物的金属元素和至少一种选自VIa族元素的非金属元素， Ⅶa族元素或氮，并且通过热退火工艺在引入金属元素和非金属元素之后使无定形膜结晶，以将非晶膜转化为结晶膜。

公开(公告)号：US5696388A

公开(公告)日：1997-12-09

申请号：US745312

申请日：1996-11-12

申请人： Fumiaki Funada ,  Tatsuo Morita ,  Hirohisa Tanaka ,  Hongyong Zhang ,  Toru Takayama

发明人： Fumiaki Funada ,  Tatsuo Morita ,  Hirohisa Tanaka ,  Hongyong Zhang ,  Toru Takayama

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L29/12 ,  H01L31/036

CPC分类号： H01L27/1277 ,  Y10S148/016 ,  Y10S438/982

摘要： In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having different characteristics are constituted by using crystalline silicon film whose crystal has grown in a direction parallel with a substrate. That is, an angle formed between a crystal growing direction and a carrier moving direction are made different from each other, thereby to control a resistance imposed on the carriers when moving to determine the characteristics of the TFT. For example, when the crystal growing direction coincides with the carrier moving direction, high mobility can be given to the carriers. Further, when the crystal growing direction is arranged perpendicular to the carrier moving direction, the off-state current can be lowered.

摘要翻译： 在有源矩阵型液晶显示装置中，在外围电路部分中，布置了具有高迁移率并且能够允许大量导通电流流动的TFT。 在像素部分中，布置有具有小截止电流的TFT。 具有不同特性的这些TFT通过使用晶体在与衬底平行的方向上生长的晶体硅膜来构成。 也就是说，使晶体生长方向和载流子移动方向之间形成的角度彼此不同，从而在移动时控制施加在载流子上的电阻以确定TFT的特性。 例如，当晶体生长方向与载流子移动方向一致时，可以赋予载流子高迁移率。 此外，当晶体生长方向垂直于载流子移动方向布置时，可以降低截止电流。

公开(公告)号：US5696003A

公开(公告)日：1997-12-09

申请号：US357648

申请日：1994-12-16

申请人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

发明人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016

摘要： Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.

摘要翻译： 引入非晶硅膜，用于加速结晶的催化剂元素。 在将催化剂元素引入岛状图案的非晶硅膜图案化之后，进行结晶化的热处理。 因此，引入的催化剂元件仅在岛状图案化的非晶硅膜的内部有效地扩散。 结果，获得了晶体生长方向在一个方向上排列并且不具有晶界的高质量晶体硅膜。 使用如此形成的晶体硅膜，无论器件尺寸如何，都能在整个基板上有效地制造具有高性能和稳定特性的半导体器件。

公开(公告)号：US5643826A

公开(公告)日：1997-07-01

申请号：US329644

申请日：1994-10-25

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/228

CPC分类号： H01L29/045 ,  H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  H01L27/1296 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US5605846A

公开(公告)日：1997-02-25

申请号：US391580

申请日：1995-02-21

申请人： Hisahi Ohtani ,  Akiharu Miyanaga ,  Hongyong Zhang ,  Naoaki Yamaguchi

发明人： Hisahi Ohtani ,  Akiharu Miyanaga ,  Hongyong Zhang ,  Naoaki Yamaguchi

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/2022 ,  H01L27/1214 ,  H01L29/66757 ,  Y10S148/016

摘要： A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphous silicon film by heating the amorphous silicon film, thereby crystallizing at least a part of the amorphous silicon film, and accelerating the crystallization by irradiating the silicon film with a laser beam or intense light equivalent thereto.

摘要翻译： 通过使用具有优异特性的结晶硅膜来制造半导体器件，特别是薄膜晶体管的工艺。 该方法包括与其接触形成氮化硅膜和非晶硅膜，通过加热非晶硅膜引入能够促进非晶硅膜结晶的催化剂元件，从而使非晶硅膜的至少一部分结晶， 并通过用与其相当的激光束或强光照射硅膜来加速结晶。

公开(公告)号：US5580792A

公开(公告)日：1996-12-03

申请号：US387238

申请日：1995-02-13

申请人： Hognyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hognyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786 ,  H01L21/306

CPC分类号： H01L29/66757 ,  H01L21/84 ,  Y10S148/016 ,  Y10S148/06 ,  Y10S148/15

摘要： Method of fabricating a semiconductor device, such as a thin-film transistor, having improved characteristics and improved reliability. The method is initiated with formation of a thin amorphous silicon film on a substrate. A metallization layer containing at least one of nickel, iron, cobalt, and platinum is selectively formed on or under the amorphous silicon film so as to be in intimate contact with the silicon film, or these metal elements are added to the amorphous silicon film. The amorphous silicon film is thermally annealed to crystallize it. The surface of the obtained crystalline silicon film is etched to a depth of 20 to 200 .ANG., thus producing a clean surface. An insulating film is formed on the clean surface by CVD or physical vapor deposition. Gate electrodes are formed on the insulating film.

摘要翻译： 制造半导体器件（例如薄膜晶体管）的方法，其具有改进的特性和可靠性。 该方法是在衬底上形成薄的非晶硅膜开始的。 包含镍，铁，钴和铂中的至少一种的金属化层选择性地形成在非晶硅膜上或下方以与硅膜紧密接触，或者将这些金属元素添加到非晶硅膜中。 将非晶硅膜热退火以使其结晶。 将得到的结晶硅膜的表面蚀刻到20〜200的深度，由此产生干净的表面。 通过CVD或物理气相沉积在清洁表面上形成绝缘膜。 在绝缘膜上形成栅电极。

公开(公告)号：US5447873A

公开(公告)日：1995-09-05

申请号：US214084

申请日：1994-03-16

申请人： John N. Randall ,  Gary A. Frazier

发明人： John N. Randall ,  Gary A. Frazier

IPC分类号： H01L29/68 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66 ,  H01L29/772 ,  H03K19/02 ,  H01L21/20

CPC分类号： B82Y10/00 ,  H01L27/0605 ,  H01L29/772 ,  Y10S148/016

摘要： A quantum dot logic unit (8) is provided which comprises a row of quantum dots (14, 16, and 18), with each quantum dot separated by vertical heterojunction tunneling barriers (20, 22, 24, and 26). Electric potentials placed on inputs (32, 34, and 36) are operable to modulate quantum states within the quantum dots, thus controlling electron tunneling through the tunneling barriers.

摘要翻译： 提供量子点逻辑单元（8），其包括一行量子点（14,16和18），每个量子点由垂直异质结隧道势垒（20,22,24和26）分隔开。 放置在输入端（32,34和36）上的电位可用于调制量子点内的量子态，从而控制通过隧道势垒的电子隧穿。

公开(公告)号：US07056775B2

公开(公告)日：2006-06-06

申请号：US11172908

申请日：2005-07-05

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

IPC分类号： H01L21/786

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/004 ,  Y10S148/016 ,  Y10S148/06

摘要： After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed.After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.