公开(公告)号：US5580792A

公开(公告)日：1996-12-03

申请号：US387238

申请日：1995-02-13

申请人： Hognyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hognyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786 ,  H01L21/306

CPC分类号： H01L29/66757 ,  H01L21/84 ,  Y10S148/016 ,  Y10S148/06 ,  Y10S148/15

摘要： Method of fabricating a semiconductor device, such as a thin-film transistor, having improved characteristics and improved reliability. The method is initiated with formation of a thin amorphous silicon film on a substrate. A metallization layer containing at least one of nickel, iron, cobalt, and platinum is selectively formed on or under the amorphous silicon film so as to be in intimate contact with the silicon film, or these metal elements are added to the amorphous silicon film. The amorphous silicon film is thermally annealed to crystallize it. The surface of the obtained crystalline silicon film is etched to a depth of 20 to 200 .ANG., thus producing a clean surface. An insulating film is formed on the clean surface by CVD or physical vapor deposition. Gate electrodes are formed on the insulating film.

摘要翻译： 制造半导体器件（例如薄膜晶体管）的方法，其具有改进的特性和可靠性。 该方法是在衬底上形成薄的非晶硅膜开始的。 包含镍，铁，钴和铂中的至少一种的金属化层选择性地形成在非晶硅膜上或下方以与硅膜紧密接触，或者将这些金属元素添加到非晶硅膜中。 将非晶硅膜热退火以使其结晶。 将得到的结晶硅膜的表面蚀刻到20〜200的深度，由此产生干净的表面。 通过CVD或物理气相沉积在清洁表面上形成绝缘膜。 在绝缘膜上形成栅电极。

公开(公告)号：US5426064A

公开(公告)日：1995-06-20

申请号：US207126

申请日：1994-03-08

申请人： Hognyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hognyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786 ,  H01L21/265

CPC分类号： H01L29/66757 ,  H01L21/84 ,  Y10S148/016 ,  Y10S148/06 ,  Y10S148/15

摘要： Method of fabricating a semiconductor device, such as a thin-film transistor, having improved characteristics and improved reliability. The method is initiated with formation of a thin amorphous silicon film on a substrate. A metallization layer containing at least one of nickel, iron, cobalt, and platinum is selectively formed on or under the amorphous silicon film so as to be in intimate contact with the silicon film, or these metal elements are added to the amorphous silicon film. The amorphous silicon film is thermally annealed to crystallize it. The surface of the obtained crystalline silicon film is etched to a depth of 20 to 200.ANG., thus producing a clean surface. An insulating film is formed on the clean surface by CVD or physical vapor deposition. Gate electrodes are formed on the insulating film.

摘要翻译： 制造半导体器件（例如薄膜晶体管）的方法，其具有改进的特性和可靠性。 该方法是在衬底上形成薄的非晶硅膜开始的。 包含镍，铁，钴和铂中的至少一种的金属化层选择性地形成在非晶硅膜上或下方，以与硅膜紧密接触，或者将这些金属元素添加到非晶硅膜中。 将非晶硅膜热退火以使其结晶。 将得到的结晶硅膜的表面蚀刻到20〜200的深度，由此产生干净的表面。 通过CVD或物理气相沉积在清洁表面上形成绝缘膜。 在绝缘膜上形成栅电极。