公开(公告)号：US20150146340A1

公开(公告)日：2015-05-28

申请号：US14090589

申请日：2013-11-26

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Kyu-Pyung Hwang ,  Young Kyu Song ,  Dong Wook Kim

IPC: H01G4/30

CPC classification number: H01G4/30 ,  H01G4/012 ,  H01G4/12

Abstract: An apparatus includes a two-terminal MLCC. The two-terminal MLCC includes a conductive layer, where the conductive layer includes at least one slot. The apparatus may also include a second conductive layer that includes at least one slot and an insulating layer that separates the two conductive layers. In one example, a first (e.g., positive) terminal of the two-terminal MLCC is formed by a first set of plates, where each plate in the first set includes at least one slot. A second (e.g., negative) terminal of the two-terminal MLCC is formed by a second set of plates, where each plate in the second set also includes at least one slot. The first set of plates and the second set of plates are interleaved, and each pair of plates is separated by an insulating layer.

Abstract translation: 一种装置包括两端MLCC。 双端MLCC包括导电层，其中导电层包括至少一个槽。 该装置还可以包括第二导电层，其包括至少一个槽和分离两个导电层的绝缘层。 在一个示例中，双端子MLCC的第一（例如，正）端子由第一组板形成，其中第一组中的每个板包括至少一个槽。 双端子MLCC的第二（例如，负极）端子由第二组板形成，其中第二组中的每个板还包括至少一个槽。 第一组板和第二组板被交错，并且每对板由绝缘层分开。

公开(公告)号：US20140252645A1

公开(公告)日：2014-09-11

申请号：US13787476

申请日：2013-03-06

Applicant: QUALCOMM INCORPORATED

Inventor： Dong Wook Kim ,  Victor A. Chiriac ,  Kyu-Pyung Hwang ,  Changhan Yun ,  Young K. Song

IPC: H01L23/34

CPC classification number: H01L23/34 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5389 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/00

Abstract: Some implementations provide a semiconductor package structure that includes a package substrate, a first package, an interposer coupled to the first package, and a first set of through via insert (TVI). The first set of TVI is coupled to the interposer and the package substrate. The first set of TVI is configured to provide heat dissipation from the first package. In some implementations, the semiconductor package structure further includes a heat spreader coupled to the interposer. The heat spreader is configured to dissipate heat from the first package. In some implementations, the first set of TVI is further configured to provide an electrical path between the first package and the package substrate. In some implementations, the first package is electrically coupled to the package substrate through the interposer and the first set of TVI. In some implementations, the first set of TVI includes a dielectric layer and a metal layer.

Abstract translation: 一些实施方案提供半导体封装结构，其包括封装衬底，第一封装，耦合到第一封装的插入器和第一组通孔插入件（TVI）。 第一组TVI耦合到插入器和封装衬底。 第一组TVI配置为提供第一包装散热。 在一些实施方案中，半导体封装结构还包括耦合到插入件的散热器。 散热器被配置为从第一包装散发热量。 在一些实施方式中，第一组TVI被进一步配置成在第一封装和封装衬底之间提供电路径。 在一些实施方案中，第一封装通过插入器和第一组TVI电耦合到封装衬底。 在一些实施方案中，第一组TVI包括电介质层和金属层。

公开(公告)号：US20140225208A1

公开(公告)日：2014-08-14

申请号：US13777475

申请日：2013-02-26

Applicant: QUALCOMM INCORPORATED

Inventor： Shiqun Gu ,  Ron Zhang ,  Vidhya Ramachandran ,  Dong Wook Kim

IPC: H01L43/02

CPC classification number: H01L43/12 ,  H01L23/3121 ,  H01L23/552 ,  H01L23/645 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2924/0002 ,  H01L2924/1435 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Some implementations provide a die that includes a magnetoresistive random access memory (MRAM) cell array that includes several MRAM cells. The die also includes a first ferromagnetic layer positioned above the MRAM cell array, a second ferromagnetic layer positioned below the MRAM cell array, and several vias positioned around at least one MRAM cell. The via comprising a ferromagnetic material. In some implementations, the first ferromagnetic layer, the second ferromagnetic layer and the several vias define a magnetic shield for the MRAM cell array. The MRAM cell may include a magnetic tunnel junction (MTJ). In some implementations, the several vias traverse at least a metal layer and a dielectric layer of the die. In some implementations, the vias are through substrate vias. In some implementations, the ferromagnetic material has high permeability and high B saturation.

Abstract translation: 一些实施方案提供了包括包括几个MRAM单元的磁阻随机存取存储器（MRAM）单元阵列的管芯。 芯片还包括位于MRAM单元阵列上方的第一铁磁层，位于MRAM单元阵列下方的第二铁磁层和位于至少一个MRAM单元周围的几个通孔。 通孔包括铁磁材料。 在一些实施方案中，第一铁磁层，第二铁磁层和几个通孔限定用于MRAM单元阵列的磁屏蔽。 MRAM单元可以包括磁性隧道结（MTJ）。 在一些实施方案中，几个通孔至少穿过管芯的金属层和电介质层。 在一些实施方案中，通孔通过衬底通孔。 在一些实施方案中，铁磁材料具有高磁导率和高B饱和度。

公开(公告)号：US09837209B2

公开(公告)日：2017-12-05

申请号：US13684072

申请日：2012-11-21

Applicant: QUALCOMM Incorporated

Inventor： Kyu-Pyung Hwang ,  Young K. Song ,  Changhan Yun ,  Dong Wook Kim

IPC: H01G4/00 ,  H01G4/30 ,  H01G4/005 ,  H01G4/232 ,  H01G4/224 ,  H01G4/002 ,  H01G4/012 ,  H01G4/33 ,  H01L23/50

CPC classification number: H01G4/002 ,  H01G4/012 ,  H01G4/33 ,  H01L23/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/19105 ,  Y10T29/417 ,  H01L2924/00

Abstract: Some novel features pertain to a capacitor structure that includes a first conductive layer, a second conductive layer and a non-conductive layer. The first conductive layer has a first overlapping portion and a second overlapping portion. The second conductive layer has a third overlapping portion, a fourth overlapping portion, and a non-overlapping portion. The third overlapping portion overlaps with the first overlapping portion of the first conductive layer. The fourth overlapping portion overlaps with the second overlapping portion of the first conductive layer. The non-overlapping portion is free of any overlap (e.g., vertical overlap) with the first conductive layer. The non-conductive layer separates the first and second conductive layers. The non-conductive layer electrically insulates the third overlapping portion and the fourth overlapping portion from the first conductive layer.

公开(公告)号：US20170243845A1

公开(公告)日：2017-08-24

申请号：US15048906

申请日：2016-02-19

Applicant: QUALCOMM Incorporated

Inventor： Jae Sik Lee ,  Hong Bok We ,  Dong Wook Kim

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/78 ,  H01L21/56 ,  H01L21/3105

CPC classification number: H01L24/14 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3135 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/0231 ,  H01L2224/04105 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/12105 ,  H01L2224/13015 ,  H01L2224/13016 ,  H01L2224/13024 ,  H01L2224/13147 ,  H01L2224/24137 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/3511

Abstract: A fan-out wafer-level-process integrated circuit is provided in which a plurality of interconnects couple to pads on an encapsulated die. The interconnects have a pad-facing surface that couples to a corresponding pad through a seed layer. The seed layer does not cover the sidewalls of the interconnects.

公开(公告)号：US09642259B2

公开(公告)日：2017-05-02

申请号：US14067677

申请日：2013-10-30

Applicant: QUALCOMM Incorporated

Inventor： Chin-Kwan Kim ,  Omar James Bchir ,  Dong Wook Kim ,  Hong Bok We

IPC: H05K7/10 ,  H05K7/12 ,  H05K1/18 ,  H05K1/11 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00

CPC classification number: H05K1/18 ,  H01L23/5383 ,  H01L23/5385 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/15192 ,  H01L2924/15313 ,  H05K1/11 ,  H01L2924/014

Abstract: Some novel features pertain to a substrate that includes a first dielectric layer and a bridge structure. The bridge structure is embedded in the first dielectric layer. The bridge structure is configured to provide an electrical connection between a first die and a second die. The first and second dies are configured to be coupled to the substrate. The bridge structure includes a first set of interconnects and a second dielectric layer. The first set of interconnects is embedded in the first dielectric layer. In some implementations, the bridge structure further includes a second set of interconnects. In some implementations, the second dielectric layer is embedded in the first dielectric layer. The some implementations, the first dielectric layer includes the first set of interconnects of the bridge structure, a second set of interconnects in the bridge structure, and a set of pads in the bridge structure.

公开(公告)号：US09595496B2

公开(公告)日：2017-03-14

申请号：US14535966

申请日：2014-11-07

Applicant: QUALCOMM Incorporated

Inventor： Jae Sik Lee ,  Hong Bok We ,  Dong Wook Kim ,  Shiqun Gu

IPC: H01L23/02 ,  H01L21/44 ,  H01L23/538 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56

CPC classification number: H01L23/5389 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L23/3107 ,  H01L23/5381 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/19 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92124 ,  H01L2924/15192 ,  H01L2924/18161 ,  H01L2924/18162

Abstract: Some novel features pertain to an integrated device package that includes an encapsulation portion and a redistribution portion. The encapsulation portion includes a first die, a first set of vias coupled to the first die, a second die, a second set of vias coupled to the second die, a bridge, and an encapsulation layer. The bridge is configured to provide an electrical path between the first die and the second die. The bridge is coupled to the first die through the first set of vias. The bridge is further coupled to the second die through the second set of vias. The encapsulation layer at least partially encapsulates the first die, the second die, the bridge, the first set of vias, and the second set of vias. The redistribution portion is coupled to the encapsulation portion. The redistribution portion includes a set of redistribution interconnects, and at least one dielectric layer.

Abstract translation: 一些新颖的特征涉及包括封装部分和再分配部分的集成器件封装。 封装部分包括第一管芯，耦合到第一管芯的第一组通孔，第二管芯，耦合到第二管芯的第二组通孔，桥接器和封装层。 桥被配置为在第一管芯和第二管芯之间提供电路径。 桥通过第一组通孔耦合到第一个模具。 桥通过第二组通孔进一步耦合到第二管芯。 封装层至少部分地封装第一管芯，第二管芯，桥接器，第一组通孔和第二组通孔。 再分配部分耦合到封装部分。 再分配部分包括一组再分布互连和至少一个电介质层。

公开(公告)号：US09418877B2

公开(公告)日：2016-08-16

申请号：US14324136

申请日：2014-07-04

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Ratibor Radojcic ,  Dong Wook Kim ,  Jae Sik Lee

IPC: H01L21/56 ,  H01L21/48 ,  H01L23/538 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L23/48 ,  H01L23/498 ,  H01L21/768 ,  H01L23/31 ,  H01L23/14 ,  H01L25/10 ,  H01L23/15

CPC classification number: H01L21/568 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/145 ,  H01L23/15 ,  H01L23/3107 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/171 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81895 ,  H01L2224/81896 ,  H01L2224/83005 ,  H01L2224/92125 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01029 ,  H01L2924/1434 ,  H01L2924/1517 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1533 ,  H01L2924/18161 ,  H05K3/4688 ,  H01L2924/014

Abstract: Some novel features pertain to an integrated device (e.g., integrated package) that includes a base portion for the integrated device, a first die (e.g., first wafer level die), and a second die (e.g., second wafer level die). The base portion includes a first inorganic dielectric layer, a first set of interconnects located in the first inorganic dielectric layer, a second dielectric layer different from the first inorganic dielectric layer, and a set of redistribution metal layers in the second dielectric layer. The first die is coupled to a first surface of the base portion. The second die is coupled to the first surface of the base portion, the second die is electrically coupled to the first die through the first set of interconnects.

Abstract translation: 一些新颖的特征涉及集成器件（例如，集成封装），其包括用于集成器件的基底部分，第一管芯（例如，第一晶片级管芯）和第二管芯（例如，第二晶片级管芯）。 基部包括第一无机电介质层，位于第一无机电介质层中的第一组互连，不同于第一无机介电层的第二电介质层和第二介电层中的一组再分布金属层。 第一管芯耦合到基部的第一表面。 第二管芯耦合到基部的第一表面，第二管芯通过第一组互连件电耦合到第一管芯。

公开(公告)号：US20160163628A1

公开(公告)日：2016-06-09

申请号：US14563854

申请日：2014-12-08

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Kyu-Pyung Hwang ,  Young Kyu Song ,  Dong Wook Kim

IPC: H01L23/498 ,  H01L23/66 ,  H01L21/48 ,  H05K1/16

CPC classification number: H01L23/49827 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/4824 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/66 ,  H01L24/83 ,  H01L2223/6622 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/15174 ,  H01L2924/15311 ,  H05K1/162 ,  H01L2924/00

Abstract: A package substrate that includes a first portion and a redistribution portion. The first portion is configured to operate as a capacitor. The first portion includes a first dielectric layer, a first set of metal layers in the dielectric layer, a first via in the dielectric layer, a second set of metal layers in the dielectric layer, and a second via in the dielectric layer. The first via is coupled to the first set of metal layers. The first via and the first set of metal layers are configured to provide a first electrical path for a ground signal. The second via is coupled to the second set of metal layers. The second via and the second set of metal layers are configured to provide a second electrical path for a power signal. The redistribution portion includes a second dielectric layer, and a set of interconnects.

Abstract translation: 一种封装基板，包括第一部分和再分配部分。 第一部分被配置为作为电容器工作。 第一部分包括第一电介质层，电介质层中的第一组金属层，电介质层中的第一通孔，介电层中的第二组金属层和介电层中的第二通孔。 第一通孔耦合到第一组金属层。 第一通孔和第一组金属层被配置成为接地信号提供第一电路径。 第二通孔耦合到第二组金属层。 第二通孔和第二组金属层被配置成为功率信号提供第二电路径。 再分配部分包括第二介电层和一组互连。

公开(公告)号：US09294064B2

公开(公告)日：2016-03-22

申请号：US13835211

申请日：2013-03-15

Applicant: QUALCOMM Incorporated

Inventor： Young Kyu Song ,  Kyu-Pyung Hwang ,  Changhan Hobie Yun ,  Dong Wook Kim

IPC: H03H7/01 ,  H03H7/12 ,  H05K1/16 ,  H01G4/40 ,  H03H3/00

CPC classification number: H03H7/0115 ,  H01G4/40 ,  H03H3/00 ,  H03H7/12 ,  H05K1/162 ,  H05K2201/09236 ,  Y10T29/43 ,  Y10T29/49016

Abstract: A planar capacitor includes, in part, a first metal line forming spiral-shaped loops around one of its end point, and a second metal line forming spiral-shaped loops between the loops of the first metal line. The first and second metal lines are coplanar, formed on an insulating layer, and form the first and second plates of the planar capacitor. The planar capacitor may be used to form a filter. Such a filter includes a first metal line forming first spiral-shaped loops, a second metal line forming second spiral-shaped loops, and a third metal line—coplanar with the first and second metal lines—forming loops between the loops of the first and second metal lines. The filter further includes a first inductor coupled between the first and third metal lines, and a second inductor coupled between the second and third metal lines.

Abstract translation: 平面电容器部分地包括围绕其端点之一形成螺旋形环的第一金属线和在第一金属线的环之间形成螺旋形环的第二金属线。 第一和第二金属线是共面的，形成在绝缘层上，并形成平面电容器的第一和第二板。 平面电容器可以用于形成滤波器。 这种过滤器包括形成第一螺旋形环的第一金属线，形成第二螺旋状环的第二金属线和与第一和第二金属线形成环之间的第一和第二金属线形成环的第三金属线 - 共面， 第二条金属线 滤波器还包括耦合在第一和第三金属线之间的第一电感器和耦合在第二和第三金属线之间的第二电感器。