IN-SITU CLEANING USING HYDROGEN PEROXIDE AS CO-GAS TO PRIMARY DOPANT OR PURGE GAS FOR MINIMIZING CARBON DEPOSITS IN AN ION SOURCE

    公开(公告)号:US20180096828A1

    公开(公告)日:2018-04-05

    申请号:US15281844

    申请日:2016-09-30

    Abstract: An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber. An inert gas is further introduced and ionized to counteract oxidation of a cathode due to the decomposition of the hydrogen peroxide. A vacuum pump system removes the hydrocarbons from the ion source chamber, wherein deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source chamber is increased.

    Constant mass flow multi-level coolant path electrostatic chuck

    公开(公告)号:US09847240B2

    公开(公告)日:2017-12-19

    申请号:US14178795

    申请日:2014-02-12

    Abstract: A workpiece support has a vessel having a top interior wall and a bottom interior wall. An interior cavity is defined between the top interior wall and bottom interior wall, wherein a support surface configured to support a workpiece. A plate is positioned within the interior cavity, dividing the interior cavity into a top cavity and a bottom cavity. The top and bottom cavities are fluidly coupled about a periphery of the plate. A first taper defined in one or more of the top interior wall and a top portion of the plate provides a substantially constant volume across a radial cross-section of the top cavity. A second taper defined in one or more of the bottom interior wall and a bottom portion of the plate provides a substantially constant volume across a radial cross-section of the bottom cavity. First and second ports fluidly couple the top and bottom cavities to respective first and second fluid channels.

    ION SOURCE LINER HAVING A LIP FOR ION IMPLANTATION SYSTEMS

    公开(公告)号:US20170133193A1

    公开(公告)日:2017-05-11

    申请号:US15344502

    申请日:2016-11-04

    CPC classification number: H01J37/08 H01J27/022 H01J37/3171 H01J2237/31705

    Abstract: An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. An electrode has a shaft with a first diameter that passes through the body and the liner. The electrode is electrically isolated from the body where the liner is a plate having a first surface with an optional recess having a second surface. A hole is defined through the recess for the shaft to pass through. The hole has a second diameter that is larger than the first diameter, and an annular gap exists between the plate and the shaft. The plate has a lip extending from the second surface toward the first surface that surrounds the hole within the recess and generally prevents particulate contaminants from entering the annular gap.

    Bipolar wafer charge monitor system and ion implantation system comprising same
    55.
    发明授权
    Bipolar wafer charge monitor system and ion implantation system comprising same 有权
    双极晶片电荷监测系统和包括其的离子注入系统

    公开(公告)号:US09558914B2

    公开(公告)日:2017-01-31

    申请号:US14631066

    申请日:2015-02-25

    Abstract: A charge monitor having a Langmuir probe is provided, wherein a positive and negative charge rectifier are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively. A positive current integrator is operably coupled to the positive charge rectifier, wherein the positive current integrator is biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage based, at least in part, on the positive threshold voltage. A negative current integrator is operably coupled to the negative charge rectifier, wherein the negative current integrator is biased via a negative threshold voltage, and wherein the negative current integrator is configured to output a negative dosage based, at least in part, on the negative threshold voltage. A positive charge counter and a negative charge counter are configured to respectively receive the output from the positive current integrator and negative current integrator in order to provide a respective cumulative positive charge value and cumulative negative charge value associated with the respective positive charge and negative charge.

    Abstract translation: 提供具有朗缪尔探针的电荷监测器,其中正和负电荷整流器可操作地耦合到探针并且被配置为分别仅通过正和负电荷。 正电流积分器可操作地耦合到正电荷整流器,其中正电流积分器经由正阈值电压偏置,并且其中正电流积分器被配置为至少部分地基于正阈值输出正剂量 电压。 负电流积分器可操作地耦合到负电荷整流器,其中负电流积分器经由负阈值电压被偏置,并且其中负电流积分器被配置为基于至少部分地基于负阈值输出负剂量 电压。 配置正电荷计数器和负电荷计数器以分别接收来自正电流积分器和负电流积分器的输出,以便提供与相应的正电荷和负电荷相关联的相应的累积正电荷值和累积负电荷值。

    Implant-induced damage control in ion implantation
    56.
    发明授权
    Implant-induced damage control in ion implantation 有权
    植入物诱导的离子注入损伤控制

    公开(公告)号:US09490185B2

    公开(公告)日:2016-11-08

    申请号:US14013728

    申请日:2013-08-29

    Abstract: An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.

    Abstract translation: 提供了离子注入系统,其具有被配置为向工件提供具有束密度的点离子束的离子注入装置,其中工件具有与其相关联的晶体结构。 扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。 还提供控制器并构造成当工件上的预定位置暴露于点离子束时,建立工件的预定局部温度。 因此,在预定位置处实现了工件的晶体结构的预定的局部混乱,其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比,以建立 工件在工件上预定位置的局部温度。

    SYSTEM AND METHOD TO IMPROVE PRODUCTIVITY OF HYBRID SCAN ION BEAM IMPLANTERS
    57.
    发明申请
    SYSTEM AND METHOD TO IMPROVE PRODUCTIVITY OF HYBRID SCAN ION BEAM IMPLANTERS 有权
    提高混合光束离子束植入物生产力的系统和方法

    公开(公告)号:US20160189928A1

    公开(公告)日:2016-06-30

    申请号:US14979663

    申请日:2015-12-28

    Abstract: A method for improving the productivity of a hybrid scan implanter by determining an optimum scan width is provided. A method of tuning a scanned ion beam is provided, where a desired beam current is determined to implant a workpiece with desired properties. The scanned beam is tuned utilizing a setup Faraday cup. A scan width is adjusted to obtain an optimal scan width using setup Faraday time signals. Optics are tuned for a desired flux value corresponding to a desired dosage. Uniformity of a flux distribution is controlled when the desired flux value is obtained. An angular distribution of the ion beam is further measured.

    Abstract translation: 提供了一种通过确定最佳扫描宽度来提高混合扫描注入机的生产率的方法。 提供了一种调整扫描离子束的方法,其中确定期望的束电流以将具有期望特性的工件植入。 扫描的光束利用设置的法拉第杯进行调谐。 调整扫描宽度以使用设置法拉第时间信号获得最佳扫描宽度。 调整光学对应于期望剂量的期望通量值。 当获得期望的通量值时,控制通量分布的均匀性。 进一步测量离子束的角度分布。

    Method of Measuring Vertical Beam Profile in an Ion Implantation System Having a Vertical Beam Angle Device
    58.
    发明申请
    Method of Measuring Vertical Beam Profile in an Ion Implantation System Having a Vertical Beam Angle Device 有权
    在具有垂直光束角度装置的离子植入系统中测量垂直光束轮廓的方法

    公开(公告)号:US20160189927A1

    公开(公告)日:2016-06-30

    申请号:US14972334

    申请日:2015-12-17

    Inventor: Shu Satoh

    Abstract: An ion implantation system measurement system has a scan arm that rotates about an axis and a workpiece support to translate a workpiece through the ion beam. A first measurement component downstream of the scan arm provides a first signal from the ion beam. A second measurement component with a mask is coupled to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm. The mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup based on an angular orientation between the mask and the ion beam. A blocking plate selectively blocks the ion beam to the first faraday based on the rotation of the scan arm. A controller determines an angle and vertical size of the ion beam based on the first signal, second signal, and orientation between the mask and ion beam as the second measurement component rotates.

    Abstract translation: 离子注入系统测量系统具有围绕轴线旋转的扫描臂和工件支撑件,以使工件平移通过离子束。 扫描臂下游的第一测量部件提供来自离子束的第一信号。 具有掩模的第二测量部件耦合到扫描臂,以提供来自离子束的第二信号与扫描臂的旋转。 掩模允许来自离子束的不同量的离子辐射基于掩模和离子束之间的角度取向进入法拉第杯。 阻挡板基于扫描臂的旋转选择性地将离子束阻挡到第一法拉第。 当第二测量部件旋转时,控制器基于第一信号,第二信号和掩模和离子束之间的取向来确定离子束的角度和垂直尺寸。

    High throughput heated ion implantation system and method
    59.
    发明授权
    High throughput heated ion implantation system and method 有权
    高通量加热离子注入系统及方法

    公开(公告)号:US09378992B2

    公开(公告)日:2016-06-28

    申请号:US14317778

    申请日:2014-06-27

    Abstract: An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.

    Abstract translation: 离子注入系统具有耦合到第一和第二双负载锁定组件的离子注入装置,每个具有由公共壁分隔的相应的第一和第二室。 每个第一室具有构造成将工件加热到第一温度的预热装置。 每个第二腔室具有后冷却装置,其构造成将工件冷却至第二温度。 热卡盘将工件保持在用于离子注入的处理室中,并且热卡盘构造成将工件加热到第三温度。 泵和排气口与第一和第二室选择性地流体连通。 控制器被配置为经由预热装置在大气环境中将工件加热到第一温度,以经由热卡盘将工件加热到第二温度,以通过离子注入装置将离子注入工件,并且 通过预热装置,后冷却装置,泵,通风口和热卡盘的控制在大气和真空环境之间传送工件。

    Integrated extraction electrode manipulator for ion source
    60.
    发明授权
    Integrated extraction electrode manipulator for ion source 有权
    用于离子源的集成提取电极操纵器

    公开(公告)号:US09318302B1

    公开(公告)日:2016-04-19

    申请号:US14674694

    申请日:2015-03-31

    Abstract: A modular ion source and extraction apparatus comprises an ion source chamber selectively electrically coupled to a voltage potential, wherein the ion source chamber comprises an extraction aperture. An extraction electrode is positioned proximate to the extraction aperture of the ion source chamber, wherein the extraction electrode is electrically grounded and configured to extract ions from the ion source chamber. One or more linkages operably couple to the ion source chamber, and one or more insulators couple the extraction electrode to the respective one or more linkages, wherein the one or more insulators electrically insulate the respective one or more linkages from the extraction electrode, therein electrically insulating the extraction electrode from the ion source chamber. One or more actuators operably couple the one or more linkages to the ion source chamber, wherein the one or more actuators are configured to translate the one or more linkages with respect to the ion source chamber, therein translating the extraction electrode in one or more axes.

    Abstract translation: 模块化离子源和提取装置包括选择性地电耦合到电压电位的离子源室,其中离子源室包括提取孔。 提取电极位于靠近离子源室的提取孔的位置,其中提取电极被电接地并被配置为从离子源室提取离子。 一个或多个键可操作地耦合到离子源室,并且一个或多个绝缘体将引出电极耦合到相应的一个或多个键,其中一个或多个绝缘体将相应的一个或多个键与引出电极电绝缘,其中电 将引出电极与离子源室绝缘。 一个或多个致动器可操作地将所述一个或多个连杆耦合到所述离子源室,其中所述一个或多个致动器被配置成相对于所述离子源室平移所述一个或多个连杆,其中在所述离心源室中平移所述引出电极 。

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