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公开(公告)号：US20240292761A1
公开(公告)日：2024-08-29
申请号：US18421830
申请日：2024-01-24
Applicant: Microsoft Technology Licensing, LLC
Inventor： Georg Wolfgang Winkler , Roman Mykolayovych Lutchyn , Geoffrey Charles Gardner , Raymond Leonard Kallaher , Sergei Vyatcheslavovich Gronin , Michael James Manfra , Farhad Karimi
Abstract: A semiconductor-superconductor hybrid device comprises a semiconductor, a superconductor, and a barrier between the superconductor and the semiconductor. The device is configured to enable energy level hybridisation between the semiconductor and the superconductor. The barrier is configured to increase a topological gap of the device. The barrier allows for control over the degree of hybridisation between the semiconductor and the superconductor. Further aspects provide a quantum computer comprising the device, a method of manufacturing the device, and a method of inducing topological behaviour in the device.
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公开(公告)号：US11974509B2
公开(公告)日：2024-04-30
申请号：US18054488
申请日：2022-11-10
Applicant: Microsoft Technology Licensing, LLC
Inventor： Peter Krogstrup Jeppesen
IPC: H10N69/00 , B82Y10/00 , C23C14/28 , C30B11/12 , C30B23/06 , G06N10/00 , H01L29/06 , H10N60/01 , H10N60/10 , H10N60/82
CPC classification number: H10N69/00 , C23C14/28 , C30B11/12 , C30B23/06 , H01L29/0669 , H10N60/01 , H10N60/0801 , H10N60/0884 , H10N60/10 , H10N60/82 , B82Y10/00 , G06N10/00
Abstract: A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.
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公开(公告)号：US11937518B2
公开(公告)日：2024-03-19
申请号：US17749298
申请日：2022-05-20
Applicant: Daniel Robert Queen
Inventor： Daniel Robert Queen
Abstract: One example includes a superconducting circuit. The circuit superconducting circuitry fabricated on a first surface of a circuit layer. The circuit layer includes a dielectric material. The circuit also includes a metal layer formed on a second surface of the circuit layer opposite the first surface and a through-substrate via (TSV) conductively coupled to the metal layer and extending through the circuit layer to the first surface. The circuit further includes a flux gasket conductively coupled to and extending from the TSV on the first surface proximal to the superconducting circuitry. The flux gasket can be configured to divert magnetic fields away from the superconducting circuitry.
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公开(公告)号：US11937516B2
公开(公告)日：2024-03-19
申请号：US16808974
申请日：2020-03-04
Applicant: International Business Machines Corporation
Inventor： Rasit Onur Topaloglu , Vivekananda P. Adiga , Martin O. Sandberg
CPC classification number: H10N60/01 , H05B3/06 , H10N60/80 , H10N69/00 , H05B2203/014 , H10N60/805
Abstract: Devices, systems, and/or methods that can facilitate local heating of a superconducting flux biasing loop are provided. According to an embodiment, a method can comprise forming on a substrate a biasing loop and a flux controlled qubit device of a superconducting flux bias circuit. The method can further comprise forming a heating device on the substrate to couple the heating device to the biasing loop.
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45.发明授权公开(公告)号：US11923131B2
公开(公告)日：2024-03-05
申请号：US17096699
申请日：2020-11-12
Applicant: Lawrence Livermore National Security, LLC , Richard Thuss
Inventor： Alexander Baker , Scott K. McCall , Harry B. Radousky , Nathan Woollett , Richard Thuss
IPC: H01F7/02 , B22F10/25 , B22F10/38 , B32B1/04 , B32B3/02 , B32B3/26 , B32B3/30 , B32B5/14 , B32B5/16 , B32B7/025 , B32B7/027 , B32B15/04 , B33Y80/00 , C23C4/01 , C23C4/04 , C23C4/06 , C23C4/08 , C23C4/12 , C23C24/00 , C23C24/04 , C23C30/00 , H01F7/00 , H01F41/14 , H01F41/20 , H01F41/30 , H01F41/34 , H10N10/00 , H10N10/80 , H10N10/857 , H10N15/00 , H10N30/00 , H10N30/01 , H10N30/074 , H10N30/076 , H10N60/00 , H10N60/01 , B33Y10/00 , H10N10/01
CPC classification number: H01F41/14 , B22F10/25 , B22F10/38 , B32B1/04 , B32B3/02 , B32B3/26 , B32B3/30 , B32B5/14 , B32B5/142 , B32B5/145 , B32B5/16 , B32B7/025 , B32B7/027 , B32B15/04 , B32B15/043 , B33Y80/00 , C23C4/01 , C23C4/04 , C23C4/06 , C23C4/08 , C23C4/12 , C23C24/00 , C23C24/04 , C23C30/00 , C23C30/005 , H01F7/00 , H01F7/02 , H01F41/20 , H01F41/30 , H01F41/34 , H10N10/00 , H10N10/80 , H10N10/857 , H10N15/00 , H10N30/00 , H10N30/01 , H10N30/074 , H10N30/076 , H10N30/1051 , H10N60/00 , H10N60/01 , B22F2999/00 , B33Y10/00 , C22C2202/00 , H10N10/01 , Y10T428/12389 , Y10T428/12396 , Y10T428/12458 , Y10T428/12493 , Y10T428/12528 , Y10T428/12535 , Y10T428/12681 , Y10T428/24942 , Y10T428/249921 , Y10T428/26 , B22F2999/00 , B22F10/25 , B22F2207/01 , C22C2202/02
Abstract: A product includes an array of cold spray-formed structures. Each of the structures is characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material. A product includes a cold spray-formed structure characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material.
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Patent Agency Ranking
46.发明授权公开(公告)号：US11887777B2
公开(公告)日：2024-01-30
申请号：US16390512
申请日：2019-04-22
Inventor： Ernesto S. Bosque , Youngjae Kim , Ulf P. Trociewitz , Charles L. English , David C. Larbalestier
CPC classification number: H01F41/048 , H01B12/00 , H01F6/06 , H01F41/098 , H01F41/127 , H10N60/01
Abstract: A coil for a magnet includes a superconductor comprising a Bi2Sr2CaCu2O8+δ (Bi-2212) high temperature superconductor (HTS) filament. The HTS filament can be encased in a protective conducting sheath. The superconductor is wound to form a coil. A reinforcement winding is wound with the superconductor. The reinforcement winding can be a wire, a tape, a band, and an outer layer encasing the superconductor filament. A method of making a coil for a magnet, a composite superconductor for a magnet, and a magnet are also disclosed.
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公开(公告)号：US20240023461A1
公开(公告)日：2024-01-18
申请号：US18198192
申请日：2023-05-16
Applicant: Google LLC
Inventor： Anthony Edward Megrant
CPC classification number: H10N60/0912 , G06N10/00 , H10N60/01
Abstract: A method for forming at least part of a quantum information processing device is presented. The method includes providing a first electrically-conductive layer formed of a first electrically-conductive material on a principal surface of a substrate, depositing a layer of dielectric material on the first electrically-conductive material, patterning the layer of dielectric material to form a pad of dielectric material and to reveal a first region of the first electrically-conductive layer, depositing a second electrically-conductive layer on the pad of dielectric material and on the first region of the first electrically-conductive layer, patterning the second electrically-conductive layer and removing the pad of dielectric material using isotropic gas phase etching.
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公开(公告)号：US20240016069A1
公开(公告)日：2024-01-11
申请号：US18251870
申请日：2021-11-04
Applicant: Silicon Quantum Computing Pty Limited
Abstract: Aspects of the present disclosure are directed to quantum processing systems that include a plurality of donor atom qubits positioned in a semiconductor substrate. The system also comprises a plurality of control gates configured to control the donor atom qubits. The system further comprises an SLQD charge sensor fabricated on/in the semiconductor substrate. The SLQD charge sensor is configured to sense spin-states of two or more donor atom qubits, which are positioned within a sensing range of the SLQD charge sensor.
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公开(公告)号：US11864472B2
公开(公告)日：2024-01-02
申请号：US17373619
申请日：2021-07-12
Applicant: California Institute of Technology
Inventor： Harold Frank Greer , Andrew D. Beyer , Matthew D. Shaw , Daniel P. Cunnane
Abstract: A method for etching a surface including obtaining a structure comprising a plurality of nanowires on or above a substrate and a dielectric layer on or above the nanowires, wherein the dielectric layer comprises protrusions formed by the underlying nanowires; reacting a surface of the dielectric layer with a reactant, comprising a gas or a plasma, to form a reactive layer on the dielectric layer, wherein the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer and the reactive layer comprises sidewalls defined by the protrusions; and selectively etching the reactive layer, wherein the etching etches the protrusions laterally through the sidewalls so as to planarize the surface and remove or shrink the protrusions.
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公开(公告)号：US20230371403A1
公开(公告)日：2023-11-16
申请号：US18018542
申请日：2021-07-29
Applicant: University of Rochester , THE BOARD OF REGENTS OF THE NEVADA SYSTEM OF HIGHER EDUCATION ON BEHALF OF THE UNIVERSITY OF NEVADA,
Inventor： Liyanagamage R. Dias , Ashkan Salamat
Abstract: Superconductive materials and methods of making the same are described, in which the superconductive materials are grown on a crystalline substrate having lattice parameters that impart a strain on the superconductive materials that reduces an applied pressure at which the superconductive materials exhibit superconductivity.
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