公开(公告)号：US11952654B2

公开(公告)日：2024-04-09

申请号：US17287702

申请日：2019-10-22

申请人： EVATEC AG

发明人： Dominik Jaeger ,  Thomas Tschirky ,  Marco Rechsteiner ,  Heinz Felzer ,  Hartmut Rohrmann

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/3428 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3438 ,  H01J37/3441 ,  H01J2237/332

摘要： A sputtering device to sputter a liquid target. The sputtering device including a trough to receive a liquid target material and a device to stir or agitate the liquid target material. The device configured to degas the liquid target material or/and to dissipate solid particles or islands on a surface of the target or/and to move such particles or islands from an active surface region to a passive surface region and/or vice-versa, whereby the passive surface region is at least 50% less exposed to sputtering as the active surface region.

公开(公告)号：US11898238B2

公开(公告)日：2024-02-13

申请号：US17494017

申请日：2021-10-05

申请人： SKY TECH INC.

发明人： Jing-Cheng Lin ,  Yu-Te Shen

IPC分类号： H01J37/34 ,  C23C14/56 ,  C23C14/02

CPC分类号： C23C14/564 ,  C23C14/021 ,  H01J37/3441 ,  H01J37/3447

摘要： The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-shield member, a second-shield member and a driver. The first-shield member has a first-inner-edge surface disposed with a protrusion. The second-shield member has a second-inner-edge surface disposed with a cavity. The driver interconnects and drives the first-shield member and the second-shield member to sway in opposite directions. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

公开(公告)号：US20240021422A1

公开(公告)日：2024-01-18

申请号：US18195985

申请日：2023-05-11

申请人： Honeywell International Inc.

发明人： Bo Liu

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3435 ,  C23C14/3407 ,  H01J37/3441

摘要： A spacing guide for use on a dark space shield of a sputtering chamber includes a horizontal body having a first end, a second end opposite the first end and a thickness, the horizontal body configured to rest on an end of the dark space shield; a first leg extending laterally from the first end of the horizontal body and configured to rest against an outer surface of the dark space shield; and a second leg extending laterally from the second end of the horizontal body and configured to rest against the inner surface of the shield.

公开(公告)号：US11823879B2

公开(公告)日：2023-11-21

申请号：US17573368

申请日：2022-01-11

申请人： TOKYO ELECTRON LIMITED

发明人： Masato Shinada ,  Tetsuya Miyashita ,  Naoki Watanabe

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3429 ,  C23C14/3464 ,  H01J37/3435 ,  H01J37/3441 ,  H01J37/3447 ,  H01J2237/332

摘要： There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

公开(公告)号：US20230369034A1

公开(公告)日：2023-11-16

申请号：US18044887

申请日：2021-07-06

申请人： JSW AFTY Corporation

发明人： Hironori TORII

IPC分类号： H01J37/34 ,  C23C14/04 ,  C23C14/34

CPC分类号： H01J37/3441 ,  H01J37/3423 ,  C23C14/042 ,  C23C14/34 ,  H01J2237/332

摘要： A film forming apparatus 1 includes a target TA, a ring-shaped shield member 30 provided between the target TA and a plasma generation unit, and a ring-shaped shield member 40 provided between the target TA and a workpiece holding unit. The target TA includes a cylindrical target member 21 and a backing tube (supporting member) 20 configured to support the target member 21. Each of the shield member 30, the shield member 40, and the target member 21 is stacked in a Z direction around an axis VL1 as a central axis extending in the Z direction, each of the shield member 30, the target member 21, and the shield member 40 is arranged so as to be separated from each other in the Z direction, and an inner diameter D1 of the shield member 30 is smaller than an inner diameter D2 of the target member 21.

公开(公告)号：US11810770B2

公开(公告)日：2023-11-07

申请号：US17490840

申请日：2021-09-30

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC分类号： H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  C23C14/54

CPC分类号： H01J37/3458 ,  C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3402 ,  H01J37/345 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3455

摘要： Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US11739418B2

公开(公告)日：2023-08-29

申请号：US16823182

申请日：2020-03-18

申请人： Applied Materials, Inc

发明人： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC分类号： C23C14/34 ,  C23C14/56 ,  C23C14/06 ,  H01J37/34

CPC分类号： C23C14/564 ,  C23C14/0641 ,  C23C14/34 ,  H01J37/3405 ,  H01J37/3441 ,  H01J37/3464 ,  H01J2237/24514

摘要： A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

公开(公告)号：US20230141782A1

公开(公告)日：2023-05-11

申请号：US18093442

申请日：2023-01-05

申请人： Applied Materials, Inc.

发明人： David Fenwick ,  Chengtsin Lee ,  Jennifer Y. Sun ,  Yikai Chen

IPC分类号： C23C14/06 ,  C23C16/44 ,  H01J37/32 ,  H01J37/34 ,  C23C14/08 ,  C23C14/00 ,  C23C14/46

CPC分类号： C23C14/0694 ,  C23C16/4404 ,  H01J37/32559 ,  H01J37/32477 ,  H01J37/3441 ,  C23C14/083 ,  C23C14/08 ,  C23C14/081 ,  C23C14/082 ,  C23C14/0021 ,  C23C14/46 ,  H01J37/32495 ,  C23C14/30

摘要： An article has a body having a protective coating. The protective coating is a thin film that includes a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of MxOyFz, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

公开(公告)号：US10062553B2

公开(公告)日：2018-08-28

申请号：US15420472

申请日：2017-01-31

申请人： CANON ANELVA CORPORATION

发明人： Taichi Hiromi ,  Hidetoshi Shimokawa ,  Atsuyuki Ichikawa

IPC分类号： C23C14/34 ,  H01J37/34 ,  G01L21/00 ,  H01L21/203 ,  H01L21/285 ,  C23C14/56 ,  C23C16/44 ,  H01J37/32

CPC分类号： H01J37/3447 ,  C23C14/564 ,  C23C16/4401 ,  G01L21/00 ,  H01J37/32816 ,  H01J37/32935 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3476 ,  H01J2237/026 ,  H01J2237/24585 ,  H01J2237/3322 ,  H01L21/203 ,  H01L21/285 ,  H01L21/2855

摘要： A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a concave portion, and an opening portion is provided in the bottom portion of the concave portion. The sputtering apparatus includes a shield member configured to shield the opening portion from the sputtering space. The opening portion is formed so that a pressure gauge capable of measuring the pressure in the sputtering space can be attached, and the shield member is arranged so that at least a part of the shield member is buried in the concave portion.

公开(公告)号：US20170183768A1

公开(公告)日：2017-06-29

申请号：US15456840

申请日：2017-03-13

申请人： APPLIED MATERIALS, INC.

发明人： ZHENBIN GE ,  ALAN A. RITCHIE

IPC分类号： C23C14/54 ,  H01J37/34 ,  C23C14/35

CPC分类号： C23C14/54 ,  C23C14/3471 ,  C23C14/35 ,  H01J37/32165 ,  H01J37/32403 ,  H01J37/3405 ,  H01J37/3441 ,  H01J37/3464 ,  H01J37/3476

摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.