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    TUNABLE UPPER PLASMA-EXCLUSION-ZONE RING FOR A BEVEL ETCHER
    41.
    发明公开
    TUNABLE UPPER PLASMA-EXCLUSION-ZONE RING FOR A BEVEL ETCHER 审中-公开

    公开(公告)号：US20230402257A1

    公开(公告)日：2023-12-14

    申请号：US18237856

    申请日：2023-08-24

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Jack CHEN ,  Adam LIRON ,  Gregory SEXTON

    IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

    CPC classification number: H01J37/32385 ,  H01L21/02087 ,  H01J37/32642 ,  H01L21/67069 ,  H01J37/32091 ,  Y10T29/49817

    Abstract: A tunable upper plasma exclusion zone (PEZ) ring adjusts a distance of plasma during processing in a processing chamber and includes: a lower surface that includes: a horizontal portion; and an upwardly tapered outer portion that is conical and that extends outwardly and upwardly from the horizontal portion at an upward taper angle of about 5° to 50° with respect to the horizontal portion, where an outer diameter of the upwardly tapered outer portion is greater than 300 millimeters (mm), and where an inner diameter where the upwardly tapered outer portion begins to extend upwardly is less than 300 mm. A controller is to, during processing of a 300 mm circular substrate, adjust the distance of plasma for treatment of the 300 mm circular substrate at least one of radially inward and radially outward using the tunable upper PEZ ring.

    HYBRID FEATURE ETCHING AND BEVEL ETCHING SYSTEMS
    45.
    发明申请
    HYBRID FEATURE ETCHING AND BEVEL ETCHING SYSTEMS 有权
    混合特征蚀刻和水蚀蚀系统

    公开(公告)号：US20150013906A1

    公开(公告)日：2015-01-15

    申请号：US13942502

    申请日：2013-07-15

    Applicant: Lam Research Corporation

    Inventor： Andreas Fischer ,  John Holland

    IPC: H01L21/02

    CPC classification number: H01J37/00 ,  H01J37/32091 ,  H01J37/32366 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32642 ,  H01L2221/00

    Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

    Abstract translation: 一种等离子体处理系统，至少具有用于对基板进行等离子体处理并利用至少第一处理状态和第二处理状态的等离子体处理室。 在第一处理过程期间，等离子体存在于衬底的中心区域之上，以在第一处理状态期间至少执行中心区域的等离子体处理。 在第二处理状态期间，等离子体不存在于基板的中心区域上方，但在斜边缘区域附近存在，以至少在第二处理状态期间执行斜面边缘区域的等离子体处理。 在第二处理状态期间，上电极处于RF浮置状态，并且衬底设置在下电极表面上。

    Plasma processing chamber for bevel edge processing
    46.
    发明授权
    Plasma processing chamber for bevel edge processing 有权
    等离子处理室用于斜边加工

    公开(公告)号：US08673111B2

    公开(公告)日：2014-03-18

    申请号：US13870917

    申请日：2013-04-25

    Applicant: Lam Research Corporation

    Inventor： Andrew D. Bailey, III ,  Yunsang Kim

    IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

    CPC classification number: H01J37/32385 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32706 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6715

    Abstract: A process chamber includes a wafer support to mount a wafer to be processed in the process chamber, with the wafer having an annular edge exclusion area. A first electrically grounded ring extends in an annular path radially outward of the edge exclusion area and is electrically isolated from the wafer support. A second electrode is configured with a center area opposite to the wafer support. A second electrically grounded ring extends in an annular path radially outward of the second electrode and the edge exclusion area. The second electrically grounded ring is electrically isolated from the center area. An annular mount section has a DC bias ring, and the DC bias ring opposes the edge exclusion area when the wafer is present. A DC control circuit is provided for applying a DC voltage to the DC bias ring.

    Abstract translation: 处理室包括晶片支撑件，用于将待处理的晶片安装在处理室中，晶片具有环形边缘排除区域。 第一电接地环在边缘排除区域的径向外侧的环形路径中延伸并且与晶片支撑件电隔离。 第二电极配置有与晶片支撑件相对的中心区域。 第二电接地环在第二电极和边缘排除区域的径向外侧的环形路径中延伸。 第二电接地环与中心区电气隔离。 环形安装部分具有DC偏置环，并且当存在晶片时，DC偏置环与边缘排除区域相对。 提供DC控制电路以向DC偏置环施加DC电压。

    EDGE EXCLUSION CONTROL WITH ADJUSTABLE PLASMA EXCLUSION ZONE RING
    47.
    发明申请
    EDGE EXCLUSION CONTROL WITH ADJUSTABLE PLASMA EXCLUSION ZONE RING 有权
    边缘排除控制与可调等离子体排除环

    公开(公告)号：US20140020708A1

    公开(公告)日：2014-01-23

    申请号：US13553734

    申请日：2012-07-19

    Applicant: Keechan Kim ,  Yansung Kim

    Inventor： Keechan Kim ,  Yansung Kim

    IPC: C23F1/08 ,  B08B7/00

    CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32623 ,  H01J2237/334 ,  H01J2237/335

    Abstract: Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension.

    Abstract translation: 描述了边缘排除控制的系统和方法。 系统中的一个包括等离子体室。 等离子体处理室包括具有用于支撑基板的表面的下电极。 下电极与射频（RF）电源耦合。 等离子体处理室还包括设置在下电极上的上电极。 上电极电接地。 等离子体处理室包括围绕上电极的上介质环。 使用用于将上介电环的垂直位置设置为与上电极的位置分开的机构来移动上介质环。 该系统还包括围绕上部介质环的上部电极延伸部。 上电极延伸部电接地。 该系统还包括围绕下介电环的下电极延伸部。 下电极延伸部布置成与上电极延伸部相对。

    Plasma processing chamber for bevel edge processing
    48.
    发明授权
    Plasma processing chamber for bevel edge processing 有权
    等离子处理室用于斜边加工

    公开(公告)号：US08440051B2

    公开(公告)日：2013-05-14

    申请号：US13082393

    申请日：2011-04-07

    Applicant: Andrew D. Bailey, III ,  Yunsang Kim

    Inventor： Andrew D. Bailey, III ,  Yunsang Kim

    IPC: C23F1/00 ,  H01L21/306

    CPC classification number: H01J37/32385 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32706 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6715

    Abstract: Chambers for processing a bevel edge of a substrate are provided. One such chamber includes a bottom electrode defined to support a substrate in the chamber. The bottom electrode has a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode. The bottom second level is defined at a step below the bottom first level. Further included is a top electrode oriented above the bottom electrode. The top electrode having a top first level and a top second level, where the top first level is opposite the bottom first level and the top second level is opposite the bottom second level. The top second level is defined at a step above the top first level. A bottom ring mount oriented at the bottom second level is included. The bottom ring mount includes a first adjuster for moving a bottom permanent magnet toward and away from the top electrode. Further included is a top ring mount oriented at the top second level. The top ring mount includes a second adjuster for moving a top permanent magnet toward and away from the bottom electrode.

    Abstract translation: 提供了用于处理基板的斜边缘的室。 一个这样的室包括限定为支撑室中的衬底的底部电极。 底部电极具有用于支撑衬底的底部第一电平和底部电极的外部边缘附近的底部第二电平。 底部第二级别定义在底层第一级以下的一级。 还包括位于底部电极上方的顶部电极。 顶部电极具有顶部第一电平和顶部第二电平，其中顶部第一电平与底部第一电平相反，而顶部第二电平与底部第二电平相反。 顶级的第二级是在顶级第一级以上的一级定义的。 包括位于底部第二级的底环安装座。 底环安装件包括用于使底部永磁体朝向和远离顶部电极移动的第一调节器。 另外还包括一个位于顶部第二层的顶环安装座。 顶环安装件包括用于使顶部永磁体朝向和远离底部电极移动的第二调节器。

    PROCESSING APPARATUS
    49.
    发明申请
    PROCESSING APPARATUS 审中-公开
    加工设备

    公开(公告)号：US20120132367A1

    公开(公告)日：2012-05-31

    申请号：US13303392

    申请日：2011-11-23

    Applicant: Kazuyuki Tezuka ,  Kenichi Kato ,  Atsushi Sawachi ,  Takamichi Kikuchi ,  Takanori Mimura

    Inventor： Kazuyuki Tezuka ,  Kenichi Kato ,  Atsushi Sawachi ,  Takamichi Kikuchi ,  Takanori Mimura

    IPC: H01L21/306 ,  C23C16/455

    CPC classification number: H01J37/32449 ,  C23C16/45561 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32366 ,  H01J37/32385 ,  H01J37/3244

    Abstract: There is provided a processing apparatus including a processing gas discharge unit provided within a processing chamber so as to face a mounting table and configured to discharge a processing gas into the processing chamber; a first space corresponding to a central portion of a processing target object; a second space corresponding to an edge portion of the processing target object; at least one third space formed between the first space and the second space; and a processing gas distribution unit including processing gas distribution pipes and valves. The spaces are provided within the processing gas discharge unit and partitioned by partition walls. At the spaces, there are formed discharge holes for discharging the processing gas. The processing gas distribution pipes communicate with the spaces, and the valves are opened or closed to allow adjacent processing gas distribution pipes to communicate with each other or be isolated from each other.

    Abstract translation: 提供了一种处理装置，其包括：处理气体排出单元，设置在处理室内，以面对安装台并构造成将处理气体排放到处理室中; 对应于处理目标对象的中心部分的第一空间; 对应于处理目标对象的边缘部分的第二空间; 形成在所述第一空间和所述第二空间之间的至少一个第三空间; 以及包括处理气体分配管和阀的处理气体分配单元。 这些空间设置在处理气体排出单元内并由分隔壁分隔开。 在空间处，形成有用于排出处理气体的排出孔。 处理气体分配管与空间连通，并且阀被打开或关闭以允许相邻处理气体分配管彼此连通或彼此隔离。

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