Invention Grant
- Patent Title: Plasma processing chamber for bevel edge processing
- Patent Title (中): 等离子处理室用于斜边加工
-
Application No.: US13082393Application Date: 2011-04-07
-
Publication No.: US08440051B2Publication Date: 2013-05-14
- Inventor: Andrew D. Bailey, III , Yunsang Kim
- Applicant: Andrew D. Bailey, III , Yunsang Kim
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306

Abstract:
Chambers for processing a bevel edge of a substrate are provided. One such chamber includes a bottom electrode defined to support a substrate in the chamber. The bottom electrode has a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode. The bottom second level is defined at a step below the bottom first level. Further included is a top electrode oriented above the bottom electrode. The top electrode having a top first level and a top second level, where the top first level is opposite the bottom first level and the top second level is opposite the bottom second level. The top second level is defined at a step above the top first level. A bottom ring mount oriented at the bottom second level is included. The bottom ring mount includes a first adjuster for moving a bottom permanent magnet toward and away from the top electrode. Further included is a top ring mount oriented at the top second level. The top ring mount includes a second adjuster for moving a top permanent magnet toward and away from the bottom electrode.
Public/Granted literature
- US20110180212A1 Plasma Processing Chamber for Bevel Edge Processing Public/Granted day:2011-07-28
Information query