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公开(公告)号：US20230352278A1
公开(公告)日：2023-11-02
申请号：US17913935
申请日：2021-03-26
Applicant: LAM RESEARCH CORPORATION
Inventor： Xuefeng HUA , Jack CHEN , Gnanamani AMBUROSE , Dan ZHANG , Chang-Wei HUANG , Chia-Shin LIN
IPC: H01J37/32
CPC classification number: H01J37/32642 , H01J2237/3321 , H01J2237/3341
Abstract: A plasma-exclusion-zone ring for a substrate processing system that is configured to process a substrate includes a ring-shaped body, an upper portion of the ring-shaped body, a base and a plasma-exclusion-zone ring notch. The upper portion of the ring-shaped body defines a radially inner surface and a top surface. The base of the ring-shaped body defines a radially outer surface, a first bottom surface extending radially inward from the radially outer surface, and a second bottom surface extending radially inward from the first bottom surface. The plasma-exclusion-zone ring notch is proportional to an alignment notch of the substrate. The first bottom surface is tapered and extends at an acute angle from the second bottom surface to the radially outer surface. The first bottom surface is configured to extend over and oppose a periphery of the substrate.
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公开(公告)号：US20130299089A1
公开(公告)日：2013-11-14
申请号：US13943653
申请日：2013-07-16
Applicant: Lam Research Corporation
Inventor： Yunsang KIM , Andrew BAILEY, III , Jack CHEN
IPC: H01L21/02
CPC classification number: H01L21/02041 , H01L21/02087 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H01L21/6833
Abstract: An apparatus for etching a bevel edge of a substrate includes a bevel etch chamber and a controller including non-transitory computer readable media. The computer readable media includes computer readable code for providing a cleaning gas comprising at least one of a CO2 or CO, computer readable code for forming a cleaning plasma from the cleaning gas, and computer readable code for cleaning the bevel edge with the cleaning plasma, including computer readable code for placing the gas distribution plate at a close distance from a top surface of the substrate such that the cleaning plasma is not formed between the gas distribution plate and the substrate during the bevel edge cleaning, the bevel edge exposed to the cleaning plasma including at least an edge portion of a top surface at an edge of the substrate.
Abstract translation: 用于蚀刻衬底的斜边缘的设备包括斜面蚀刻室和包括非瞬态计算机可读介质的控制器。 计算机可读介质包括用于提供清洁气体的计算机可读代码，所述清洁气体包括CO 2或CO中的至少一种，用于从清洁气体形成清洁等离子体的计算机可读代码以及用清洁等离子体清洁斜面边缘的计算机可读代码， 包括用于将气体分配板放置在离基板顶表面较近距离处的计算机可读代码，使得在斜边清洁期间在气体分配板和基板之间不形成清洁等离子体，暴露于清洁的斜边 等离子体包括在衬底的边缘处的顶表面的至少边缘部分。
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Patent Agency Ranking
公开(公告)号：US20230141653A1
公开(公告)日：2023-05-11
申请号：US18013091
申请日：2022-06-07
Applicant: LAM RESEARCH CORPORATION
Inventor： Songqi GAO , Goon Heng WONG , Jack CHEN
IPC: H01J37/32 , H01L21/683
CPC classification number: H01J37/32834 , H01J37/3299 , H01L21/6833
Abstract: A pressure control system includes a first sensor, a second sensor, an evacuation valve and a controller. The first sensor is configured to detect a frontside pressure within a processing chamber. The frontside pressure is indicative of a downforce on a substrate isposed on a substrate support within the processing chamber. The second sensor is configured to detect a backside pressure on a ackside of the substrate. The controller is configured to: control the evacuation valve to remove gas from and reduce the frontside pressure of the processing chamber; and during the removal of gas from a reduction in the frontside pressure of the processing chamber and based on the frontside pressure and the backside pressure, regulate an opening of the evacuation valve such that the frontside pressure does not drop below the backside pressure.
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公开(公告)号：US20210351018A1
公开(公告)日：2021-11-11
申请号：US17283048
申请日：2019-10-16
Applicant: LAM RESEARCH CORPORATION
Inventor： Keechan KIM , Jack CHEN , Gregory S. SEXTON
IPC: H01J37/32 , H01L21/687
Abstract: A substrate processing system for processing a substrate includes an upper plasma exclusion zone ring arranged above a substrate during plasma treatment of a bevel edge of the substrate. An upper electrode is arranged above the substrate during plasma treatment. A lower plasma exclusion zone ring is at least partially arranged below the substrate during the plasma treatment. A lower electrode is at least partially arranged below the substrate during plasma treatment. The lower plasma exclusion zone ring includes an annular body with a lower portion at least partially arranged below the substrate and an upwardly projecting flange extending upwardly from the lower portion of the annular body at a location spaced from a radially outer edge of the substrate. The upwardly projecting flange includes an uppermost surface extending to one of a middle portion of the substrate in a vertical direction and above the middle portion of the substrate.
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公开(公告)号：US20210151297A1
公开(公告)日：2021-05-20
申请号：US17162097
申请日：2021-01-29
Applicant: LAM RESEARCH CORPORATION
Inventor： Jack CHEN , Adam LIRON , Gregory SEXTON
Abstract: A tunable upper plasma exclusion zone (PEZ) ring adjusts a distance of plasma during processing in a processing chamber and includes: a lower surface that includes: a horizontal portion; and an upwardly tapered outer portion that is conical and that extends outwardly and upwardly from the horizontal portion at an upward taper angle of about 5° to 50° with respect to the horizontal portion, where an outer diameter of the upwardly tapered outer portion is greater than 300 millimeters (mm), and where an inner diameter where the upwardly tapered outer portion begins to extend upwardly is less than 300 mm. A controller is to, during processing of a 300 mm circular substrate, adjust the distance of plasma for treatment of the 300 mm circular substrate at least one of radially inward and radially outward using the tunable upper PEZ ring.
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公开(公告)号：US20230402257A1
公开(公告)日：2023-12-14
申请号：US18237856
申请日：2023-08-24
Applicant: LAM RESEARCH CORPORATION
Inventor： Jack CHEN , Adam LIRON , Gregory SEXTON
CPC classification number: H01J37/32385 , H01L21/02087 , H01J37/32642 , H01L21/67069 , H01J37/32091 , Y10T29/49817
Abstract: A tunable upper plasma exclusion zone (PEZ) ring adjusts a distance of plasma during processing in a processing chamber and includes: a lower surface that includes: a horizontal portion; and an upwardly tapered outer portion that is conical and that extends outwardly and upwardly from the horizontal portion at an upward taper angle of about 5° to 50° with respect to the horizontal portion, where an outer diameter of the upwardly tapered outer portion is greater than 300 millimeters (mm), and where an inner diameter where the upwardly tapered outer portion begins to extend upwardly is less than 300 mm. A controller is to, during processing of a 300 mm circular substrate, adjust the distance of plasma for treatment of the 300 mm circular substrate at least one of radially inward and radially outward using the tunable upper PEZ ring.
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公开(公告)号：US20240210163A1
公开(公告)日：2024-06-27
申请号：US17913902
申请日：2021-03-24
Applicant: LAM RESEARCH CORPORATION
Inventor： Goon Heng WONG , Xuefeng HUA , Anthony Paul VAN SELOW , Daniel TORRES , Jack CHEN
CPC classification number: G01B11/0683 , C23C14/547 , C23C16/52 , G01B11/0625 , G01B11/14
Abstract: A system for determining a thickness of a substrate arranged in a processing chamber includes an emitter configured to transmit a signal toward a gap between the substrate and a component of the processing chamber arranged above the substrate, a receiver configured to receive at least a portion of the transmitted signal and generate a measurement signal based on a characteristic of the received portion of the signal, and a system controller configured to receive the measurement signal and selectively adjust a parameter of the processing chamber based on a relationship between values of the measurement signal and at least one of the thickness of the substrate, a width of the gap between the substrate and the component of the processing chamber, and an amount to adjust the parameter of the processing chamber.
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