公开(公告)号：US11569090B2

公开(公告)日：2023-01-31

申请号：US17384921

申请日：2021-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Chun Huang ,  Ya-Wen Yeh ,  Chien-Wen Lai ,  Wei-Liang Lin ,  Ya Hui Chang ,  Yung-Sung Yen ,  Ru-Gun Liu ,  Chin-Hsiang Lin ,  Yu-Tien Shen

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/308 ,  H01L21/266 ,  C23C16/458 ,  C23C16/50 ,  C23C16/04

Abstract: A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.

公开(公告)号：US11422465B2

公开(公告)日：2022-08-23

申请号：US16719757

申请日：2019-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Han Lai ,  Chin-Hsiang Lin ,  Chien-Wei Wang

IPC: G03F7/039 ,  G03F7/004 ,  C07D247/02 ,  C07D247/00 ,  C07D273/00

Abstract: A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.

公开(公告)号：US11215924B2

公开(公告)日：2022-01-04

申请号：US16522135

申请日：2019-07-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A photoresist composition comprises a polymer resin, a photoactive compound, an organometallic compound, an enhancement additive, and a first solvent. The enhancement additive is an ionic surfactant, a non-ionic surfactant, or a second solvent having a boiling point of greater than 150° C.

公开(公告)号：US11143963B2

公开(公告)日：2021-10-12

申请号：US16719835

申请日：2019-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Wei-Han Lai ,  Tzu-Yang Lin ,  Ming-Hui Weng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20

Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.

公开(公告)号：US11036137B2

公开(公告)日：2021-06-15

申请号：US16898681

申请日：2020-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  G03F7/11 ,  G03F7/004 ,  G03F7/20 ,  H01L29/66 ,  G03F7/32 ,  G03F7/038 ,  G03F7/09 ,  H01L21/266 ,  G03F7/38 ,  G03F7/039 ,  G03F7/075

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an assist layer over a material layer. The assist layer includes a first polymer with a first polymer backbone, a floating group bonded to the first polymer backbone, and the floating group includes carbon fluoride (CxFy), and a second polymer. The method includes forming a resist layer over the assist layer, and the first polymer is closer to an interface between the assist layer and the resist layer than the second polymer. The method also includes patterning the resist layer.

公开(公告)号：US11024623B2

公开(公告)日：2021-06-01

申请号：US16933127

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Cho ,  Fu-Jye Liang ,  Chun-Kuang Chen ,  Chih-Tsung Shih ,  Li-Jui Chen ,  Po-Chung Cheng ,  Chin-Hsiang Lin

IPC: H01L27/02 ,  G03F1/36 ,  G06F30/30 ,  G06F30/39 ,  G06F30/20 ,  G06F119/18

Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer are calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the second portion equals a penumbra size of the exposure manufacturing process, and the penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout. The patterned layer includes a plurality of absorbers, and a first width of the absorbers is the first portion is less than a second width of the absorbers in the second portion the second portion.

公开(公告)号：US11004729B2

公开(公告)日：2021-05-11

申请号：US16374150

申请日：2019-04-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ru-Gun Liu ,  Chin-Hsiang Lin ,  Chih-Ming Lai ,  Wei-Liang Lin ,  Yung-Sung Yen

IPC: H01L27/12 ,  H01L21/768

Abstract: In accordance with an aspect of the present disclosure, in a pattern forming method for a semiconductor device, a first opening is formed in an underlying layer disposed over a substrate. The first opening is expanded in a first axis by directional etching to form a first groove in the underlying layer. A resist pattern is formed over the underlying layer. The resist pattern includes a second opening only partially overlapping the first groove. The underlying layer is patterned by using the resist pattern as an etching mask to form a second groove.

公开(公告)号：US10859915B2

公开(公告)日：2020-12-08

申请号：US16137742

申请日：2018-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Tzu-Yang Lin ,  Ya-Ching Chang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/11 ,  G03F7/20 ,  G03F7/075 ,  H01L21/027 ,  H01L29/66 ,  H01L29/10 ,  H01L21/02 ,  G03F7/16 ,  H01L29/78

Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

公开(公告)号：US20200294801A1

公开(公告)日：2020-09-17

申请号：US16889506

申请日：2020-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/033 ,  H01L21/027 ,  G03F7/40

Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer. The method further includes transferring a pattern including the first layer and the second layer to the substrate.

公开(公告)号：US10777681B2

公开(公告)日：2020-09-15

申请号：US16439534

申请日：2019-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L29/78 ,  G03F7/20 ,  H01L21/8234 ,  H01L29/66

Abstract: A method includes spin-coating a first metal-free layer over the substrate, depositing a metal-containing layer over the first metal-free layer, spin-coating a second metal-free layer over the first metal-containing layer, forming a photoresist layer over the second metal-free layer, the photoresist layer including a first metallic element, exposing the photoresist layer, and subsequently developing the photoresist layer to form a pattern. The metal-containing layer includes a second metallic element selected from zirconium, tin, lanthanum, or manganese, and the first metallic element is selected from zirconium, tin, cesium, barium, lanthanum, indium, silver, or cerium.