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公开(公告)号：US12292684B2
公开(公告)日：2025-05-06
申请号：US17247301
申请日：2020-12-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chen-Yu Liu , Tzu-Yang Lin , Ya-Ching Chang , Ching-Yu Chang , Chin-Hsiang Lin
IPC: G03F7/11 , G03F7/075 , G03F7/16 , G03F7/20 , H01L21/02 , H01L21/027 , H01L29/10 , H01L29/66 , H01L29/78
Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.
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公开(公告)号：US11127592B2
公开(公告)日：2021-09-21
申请号：US15994091
申请日：2018-05-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ya-Ching Chang , Ching-Yu Chang , Chin-Hsiang Lin , Yen-Hao Chen
Abstract: A method includes forming a photoresist layer over a substrate, where the photoresist layer includes a polymer blended with a photo-acid generator (PAG), exposing the photoresist layer to a radiation source, and developing the photoresist layer, resulting in a patterned photoresist layer. The PAG is bonded to one or more polarity-enhancing group (PEG), which is configured to increase a dipole moment of the PAG. The exposing may separate the PAG into a cation and an anion, such that a PEG bonded to the cation and a PEG bonded to the anion each increases a polarity of the cation and the anion, respectively.
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公开(公告)号：US11754923B2
公开(公告)日：2023-09-12
申请号：US17214660
申请日：2021-03-26
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ya-Ching Chang , Chen-Yu Liu , Ching-Yu Chang , Chin-Hsiang Lin
CPC classification number: G03F7/16 , H01L21/6715 , H01L21/67017 , B05D1/005 , G03F7/162 , H01L21/02282
Abstract: In a method, a resist material is dispensed through a tube of a nozzle of a resist pump system on a wafer. The tube extends from a top to a bottom of the nozzle and has upper, lower, and middle segments. When not dispensing, the resist material is retracted from the lower and the middle segments, and maintained in the upper segment of the tube. When retracting, a first solvent is flown through a tip of the nozzle at the bottom of the nozzle to fill the lower segment of the tube with the first solvent and to produce a gap in the middle segment of the tube between the resist material and the first solvent. The middle segment includes resist material residues on an inner surface wall of the tube and vapor of the first solvent. The vapor of the first solvent prevents the resist material residues from drying.
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Patent Agency Ranking
公开(公告)号：US10859915B2
公开(公告)日：2020-12-08
申请号：US16137742
申请日：2018-09-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chen-Yu Liu , Tzu-Yang Lin , Ya-Ching Chang , Ching-Yu Chang , Chin-Hsiang Lin
IPC: G03F7/11 , G03F7/20 , G03F7/075 , H01L21/027 , H01L29/66 , H01L29/10 , H01L21/02 , G03F7/16 , H01L29/78
Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.
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公开(公告)号：US10527941B2
公开(公告)日：2020-01-07
申请号：US15608631
申请日：2017-05-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chen-Yu Liu , Ya-Ching Chang , Cheng-Han Wu , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a resist layer over a substrate and performing an exposing process to the resist layer. The resist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a sensitizer bonded to the polymer backbone, a photo-acid generator (PAG), and a thermo-base generator (TBG). The method further includes baking the resist layer at a first temperature and subsequently at a second temperature. The second temperature is higher than the first temperature. The method further includes developing the resist layer in a developer, thereby forming a patterned resist layer.
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公开(公告)号：US20180348639A1
公开(公告)日：2018-12-06
申请号：US15608631
申请日：2017-05-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chen-Yu Liu , Ya-Ching Chang , Cheng-Han Wu , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a resist layer over a substrate and performing an exposing process to the resist layer. The resist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a sensitizer bonded to the polymer backbone, a photo-acid generator (PAG), and a thermo-base generator (TBG). The method further includes baking the resist layer at a first temperature and subsequently at a second temperature. The second temperature is higher than the first temperature. The method further includes developing the resist layer in a developer, thereby forming a patterned resist layer.
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公开(公告)号：US11378884B2
公开(公告)日：2022-07-05
申请号：US16725884
申请日：2019-12-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chen-Yu Liu , Ya-Ching Chang , Cheng-Han Wu , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate. The photoresist layer includes at least an acid labile group (ALG) and a thermo-base generator (TBG). The method further includes exposing a portion of the photoresist layer to a radiation and performing a baking process after the exposing of the portion of the photoresist layer. The TBG releases a base during the performing of the baking process, resulting in a chemical reaction between the ALG and the base. The method further includes removing an unexposed portion of the photoresist layer, resulting in a patterned photoresist layer.
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公开(公告)号：US10649339B2
公开(公告)日：2020-05-12
申请号：US15482315
申请日：2017-04-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ya-Ching Chang , Chen-Yu Liu , Cheng-Han Wu , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: A resist material and methods for forming a semiconductor structure including using the resist material are provided. The method for forming a semiconductor structure includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion of the resist layer by performing an exposure process. The method for forming a semiconductor structure further includes developing the resist layer in a developer. In addition, the resist layer is made of a resist material including a photosensitive polymer and a contrast promoter, and a protected functional group of the photosensitive polymer is deprotected to form a deprotected functional group during the exposure process, and a functional group of the contrast promoter bonds to the deprotected functional group of the photosensitive polymer.
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