公开(公告)号：US11281107B2

公开(公告)日：2022-03-22

申请号：US16905016

申请日：2020-06-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hui Weng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/40 ,  H01L21/027 ,  G03F7/30 ,  G03F7/20

Abstract: Methods for performing a lithography process are provided. The method for performing a lithography process includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion between unexposed portions. The method for performing a lithography process further includes developing the resist layer to remove the exposed portion of the resist layer such that an opening is formed between the unexposed portions and forming a post treatment coating material in the opening and over the unexposed portions of the resist layer. The method for performing a lithography process further includes reacting a portion of the unexposed portions of the resist layer with the post treatment coating material by performing a post treatment process and removing the post treatment coating material.

公开(公告)号：US20180341177A1

公开(公告)日：2018-11-29

申请号：US15694222

申请日：2017-09-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Wei-Han Lai ,  Tzu-Yang Lin ,  Ming-Hui Weng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32

CPC classification number: G03F7/325 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2004

Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.

公开(公告)号：US10083832B1

公开(公告)日：2018-09-25

申请号：US15468109

申请日：2017-03-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Ming-Hui Weng

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  C09D201/06 ,  G03F7/11 ,  G03F7/16 ,  G03F7/09

Abstract: Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.

公开(公告)号：US12271113B2

公开(公告)日：2025-04-08

申请号：US17150389

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Cheng Liu ,  Yi-Chen Kuo ,  Jia-Lin Wei ,  Ming-Hui Weng ,  Yen-Yu Chen ,  Jr-Hung Li ,  Yahru Cheng ,  Chi-Ming Yang ,  Tze-Liang Lee ,  Ching-Yu Chang

IPC: G03F7/16 ,  G03F7/11 ,  H01L21/027 ,  G03F7/20

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1≤a≤2, b≥1, c≥1, and b+c≤5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

公开(公告)号：US11694896B2

公开(公告)日：2023-07-04

申请号：US17019094

申请日：2020-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui Weng ,  An-Ren Zi ,  Ching-Yu Chang ,  Chen-Yu Liu

IPC: H01L21/027 ,  G03F7/00 ,  G03F7/11

CPC classification number: H01L21/0271 ,  G03F7/0025 ,  G03F7/11

Abstract: A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15 pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.

公开(公告)号：US11143963B2

公开(公告)日：2021-10-12

申请号：US16719835

申请日：2019-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Wei-Han Lai ,  Tzu-Yang Lin ,  Ming-Hui Weng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20

Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.

公开(公告)号：US12222654B2

公开(公告)日：2025-02-11

申请号：US17378507

申请日：2021-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui Weng ,  Chen-Yu Liu ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F1/82 ,  G03F7/00 ,  G03F7/30 ,  G03F7/40

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

公开(公告)号：US12002675B2

公开(公告)日：2024-06-04

申请号：US17156365

申请日：2021-01-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Yu Chen ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Jr-Hung Li ,  Tze-Liang Lee ,  Ming-Hui Weng ,  Yahru Cheng

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/0274 ,  H01L21/3086 ,  H01L21/31144

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

公开(公告)号：US11705332B2

公开(公告)日：2023-07-18

申请号：US17150403

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen Kuo ,  Chih-Cheng Liu ,  Ming-Hui Weng ,  Jia-Lin Wei ,  Yen-Yu Chen ,  Jr-Hung Li ,  Yahru Cheng ,  Chi-Ming Yang ,  Tze-Liang Lee ,  Ching-Yu Chang

IPC: H01L21/00 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0275 ,  H01L21/0228 ,  H01L21/02362

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US11456266B2

公开(公告)日：2022-09-27

申请号：US17019173

申请日：2020-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ching-Yu Chang ,  Ming-Da Cheng ,  Ming-Hui Weng

IPC: H01L23/00 ,  C08G73/10

Abstract: A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.