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公开(公告)号:US11943184B2
公开(公告)日:2024-03-26
申请号:US17675632
申请日:2022-02-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seohyun Back , Taeho Kil , Kyungsu Kim , Sungjin Kim , Hojin Jung
IPC: H04L51/10 , G06V10/422 , G06V10/74 , H04L51/224
CPC classification number: H04L51/10 , G06V10/422 , G06V10/74 , H04L51/224
Abstract: Provided are a device and method for providing a notification message related to content. The method includes: recognizing an action related to at least one object in the image content by applying the image content to a first artificial intelligence model for identifying the action of the at least one object; determining target images for identifying the at least one object in the image content; obtaining identification information of the at least one object in the target images by applying the target images to at least one second artificial intelligence model for identifying the at least one object; and generating the notification message describing the image content by applying, to a third artificial intelligence model, an identification value indicating the action and the identification information of the at least one object.
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公开(公告)号:US11856696B2
公开(公告)日:2023-12-26
申请号:US17728363
申请日:2022-04-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sangwon Ha , Seyoung Jang , Sungjin Kim , Sanghoon Park , Kyungho Lee , Younoh Chi
IPC: H05K1/14 , H01L25/065
CPC classification number: H05K1/144 , H01L25/0657 , H05K1/142
Abstract: An electronic device is provided that includes a first circuit board including a first electronic component and a second electronic component disposed on a side of the first circuit board, a second circuit board spaced apart from the first circuit board and having a side facing the side of the first circuit board on which the first electronic component and the second electronic component are disposed, a first interposer disposed between the first circuit board and the second circuit board to form an inner space between the first circuit board and the second circuit board, and a second interposer disposed between the first circuit board and the second circuit board to divide the inner space into a first region and a second region, and wherein the first interposer and the second interposer electrically connect the first circuit board to the second circuit board.
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公开(公告)号:US20230194591A1
公开(公告)日:2023-06-22
申请号:US17975202
申请日:2022-10-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC: G01R29/12 , H01L21/687 , H01L21/683 , H01L21/66
CPC classification number: G01R29/12 , H01L21/6833 , H01L21/68742 , H01L22/12
Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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公开(公告)号:US11641994B2
公开(公告)日:2023-05-09
申请号:US17093010
申请日:2020-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaewook Shin , Hyunsoo Choi , Sungjin Kim , Aeran Lim , Junho Rim
IPC: G06K9/00 , G06K9/20 , G06K9/62 , G06K1/00 , A47L9/28 , A47L9/00 , G06T1/00 , G06V20/20 , G06F18/25 , G06F18/214 , G06V10/25
CPC classification number: A47L9/2815 , A47L9/009 , A47L9/2826 , A47L9/2852 , G06F18/214 , G06F18/25 , G06T1/0014 , G06V10/25 , G06V20/20 , A47L2201/04
Abstract: A robot cleaner includes an intake port, a shock detection sensor, a camera, a memory, and a processor. The memory may include an artificial intelligence model trained to identify an object, and the processor may, based on the object being ingested by the intake port, identify an image obtained within a preset time before the object is ingested, among a plurality of images obtained through the camera and identify the object according to the artificial intelligence model. Thereby, a user may be informed that the robot cleaner has ingested the object.
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公开(公告)号:US11626414B2
公开(公告)日:2023-04-11
申请号:US16903026
申请日:2020-06-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunggil Kim , Sungjin Kim , Seulye Kim , Jung-Hwan Kim , Chan-Hyoung Kim
IPC: H01L27/11568 , H01L27/11556 , G11C5/06 , H01L27/11582 , G11C5/02
Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. A semiconductor memory device includes a stack structure that includes a plurality of electrodes and a plurality of dielectric layers that are alternately stacked on a substrate, a vertical channel structure that penetrates the stack structure, and a conductive pad on the vertical channel structure. The vertical channel structure includes a semiconductor pattern and a vertical dielectric layer between the semiconductor pattern and the electrodes. An upper portion of the semiconductor pattern includes an impurity region that includes a halogen element. The upper portion of the semiconductor pattern is adjacent to the conductive pad.
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公开(公告)号:US11387253B2
公开(公告)日:2022-07-12
申请号:US16910199
申请日:2020-06-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunggil Kim , Sungjin Kim , Seulye Kim , Junghwan Kim , Chanhyoung Kim
IPC: H01L27/11582 , H01L27/1157 , H01L29/10
Abstract: A three-dimensional semiconductor device including a conductive layer disposed on a substrate and including a first conductivity-type impurity; an insulating base layer disposed on the conductive layer; a stack structure including a lower insulating film disposed on the insulating base layer, and a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked on the lower insulating film, wherein the insulating base layer includes a high dielectric material; a vertical structure including a vertical channel layer penetrating through the stack structure and a vertical insulating layer disposed between the vertical channel layer and the plurality of gate electrodes, the vertical structure having an extended area extending in a width direction in the insulating base layer; and an isolation structure penetrating through the stack structure, the insulating base layer and the conductive layer, and extending in a direction parallel to an upper surface of the substrate, wherein the conductive layer has an extension portion extending along a surface of the vertical channel layer in the extended area of the vertical structure.
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公开(公告)号:US11386659B2
公开(公告)日:2022-07-12
申请号:US16551124
申请日:2019-08-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Minsoo Kim , Sungjin Kim , Younguk Kim , Jaehyun Park , Jiwoong Choi , Hyunsoo Choi
IPC: G06K9/00 , G06V20/40 , G06K9/62 , H04N21/44 , H04N21/466 , G06N20/00 , H04N21/472 , G06V30/10
Abstract: An electronic apparatus includes a communicator circuitry, and a processor for obtaining multimedia data from an external apparatus via the communicator, identifying an object in at least one frame from among a plurality of frames included in the multimedia data, and identify a content corresponding to the identified object based on content guide information provided from a first server.
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公开(公告)号:US20220004805A1
公开(公告)日:2022-01-06
申请号:US17328626
申请日:2021-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo CHOI , Sungjin Kim , Inhak Na , Myungjin Eom
Abstract: A method of performing object recognition is performed by an electronic device and includes obtaining a spatial map of a space, using a first recognition model, recognizing one or more objects in the space, to obtain first object information of the objects, and dividing the space into a plurality of subset spaces, based on the obtained spatial map and the obtained first object information. The method further includes determining at least one second recognition model to be allocated to each of the plurality of subset spaces into which the space is divided, based on characteristic information of each of the plurality of subset spaces, and using the determined at least one second recognition model allocated to each of the plurality of subset spaces, performing object recognition on each of the plurality of subset spaces, to obtain second object information.
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公开(公告)号:US20210098480A1
公开(公告)日:2021-04-01
申请号:US16903026
申请日:2020-06-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunggil Kim , Sungjin Kim , Seulye Kim , Jung-Hwan Kim , Chan-Hyoung Kim
IPC: H01L27/11556 , G11C5/02 , H01L27/11582 , G11C5/06
Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. A semiconductor memory device includes a stack structure that includes a plurality of electrodes and a plurality of dielectric layers that are alternately stacked on a substrate, a vertical channel structure that penetrates the stack structure, and a conductive pad on the vertical channel structure. The vertical channel structure includes a semiconductor pattern and a vertical dielectric layer between the semiconductor pattern and the electrodes. An upper portion of the semiconductor pattern includes an impurity region that includes a halogen element. The upper portion of the semiconductor pattern is adjacent to the conductive pad.
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公开(公告)号:US10854562B2
公开(公告)日:2020-12-01
申请号:US16867634
申请日:2020-05-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seok-Ho Shin , Bonhwi Gu , Hyekyeong Kweon , Sungjin Kim , Joodong Kim , Jaepil Lee , Dongwon Lim
IPC: H01L23/48 , H01L23/00 , H01L23/532 , H01L23/535 , H01L23/522 , H01L21/66
Abstract: A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a plurality of connection structures provided in a lower insulating layer of the edge region and arranged at first intervals in a first direction, an upper insulating layer covering the connection structures, and a plurality of redistribution pads disposed on the upper insulating layer and connected to the connection structures, respectively. Each of the redistribution pads includes a pad portion provided on the chip region. The pad portions of the redistribution pads are spaced apart from the connection structures by a first distance in a second direction intersecting the first direction when viewed in a plan view.
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