公开(公告)号：US10679957B2

公开(公告)日：2020-06-09

申请号：US16140252

申请日：2018-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seok-Ho Shin ,  Bonhwi Gu ,  Hyekyeong Kweon ,  Sungjin Kim ,  Joodong Kim ,  Jaepil Lee ,  Dongwon Lim

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/66 ,  H01L23/522 ,  H01L23/535 ,  H01L23/532

Abstract: A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a plurality of connection structures provided in a lower insulating layer of the edge region and arranged at first intervals in a first direction, an upper insulating layer covering the connection structures, and a plurality of redistribution pads disposed on the upper insulating layer and connected to the connection structures, respectively. Each of the redistribution pads includes a pad portion provided on the chip region. The pad portions of the redistribution pads are spaced apart from the connection structures by a first distance in a second direction intersecting the first direction when viewed in a plan view.

公开(公告)号：US10854562B2

公开(公告)日：2020-12-01

申请号：US16867634

申请日：2020-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seok-Ho Shin ,  Bonhwi Gu ,  Hyekyeong Kweon ,  Sungjin Kim ,  Joodong Kim ,  Jaepil Lee ,  Dongwon Lim

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/532 ,  H01L23/535 ,  H01L23/522 ,  H01L21/66

Abstract: A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a plurality of connection structures provided in a lower insulating layer of the edge region and arranged at first intervals in a first direction, an upper insulating layer covering the connection structures, and a plurality of redistribution pads disposed on the upper insulating layer and connected to the connection structures, respectively. Each of the redistribution pads includes a pad portion provided on the chip region. The pad portions of the redistribution pads are spaced apart from the connection structures by a first distance in a second direction intersecting the first direction when viewed in a plan view.

公开(公告)号：US09577028B2

公开(公告)日：2017-02-21

申请号：US15153742

申请日：2016-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwon Lim ,  Kweonjae Lee

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10891 ,  H01L28/65 ,  H01L28/90 ,  H01L28/91

Abstract: A capacitor in a semiconductor device may include a lower electrode, a dielectric layer including a metal oxide and disposed on the lower electrode, a first material layer including aluminum oxide (AlxOy) and disposed on the dielectric layer, a second material layer including titanium oxynitride (TixOyNz) and disposed on the first material layer, and an upper electrode disposed on the second material layer, wherein the first material layer is between the dielectric layer and the second material layer, and the dielectric layer is between the lower electrode and the first material layer.

Abstract translation: 半导体器件中的电容器可以包括下电极，包括金属氧化物并且设置在下电极上的电介质层，包括氧化铝（Al x O y）并且设置在电介质层上的第一材料层，包括氮氧化钛的第二材料层 （TixOyNz）并且设置在第一材料层上，以及设置在第二材料层上的上电极，其中第一材料层在电介质层和第二材料层之间，并且介电层位于下电极和第一材料层之间 材料层。