公开(公告)号：US09305740B2

公开(公告)日：2016-04-05

申请号：US13920284

申请日：2013-06-18

Applicant: Jürgen Frosien ,  Benjamin John Cook

Inventor： Jürgen Frosien ,  Benjamin John Cook

IPC: H01J37/04 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26

CPC classification number: H01J37/045 ,  H01J37/1478 ,  H01J37/153 ,  H01J37/263 ,  H01J2237/1534 ,  H01J2237/281 ,  H01J2237/2815

Abstract: A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.

Abstract translation: 描述带电粒子束装置。 一方面，带电粒子束装置包括带电粒子束源和用于从带电粒子束产生两束或更多束束的可切换多孔，该多束光束包括：两个或更多孔径开口，其中两个或更多个 提供孔径开口以产生两个或更多束束的相应束束; 束消除器配置，其被配置为单独地消隐所述两个或更多个束束; 以及用于阻挡束束的止动孔。 该装置还包括控制单元，该控制单元被配置为控制用于切换可切换多孔的两个或更多束束的单独消隐，以及被配置用于将两束或更多束束聚焦在样本或晶片上的物镜。

公开(公告)号：US09299533B2

公开(公告)日：2016-03-29

申请号：US13770322

申请日：2013-02-19

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Matsumoto

IPC: H01J37/30 ,  H01J37/04 ,  H01J37/304 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G03F7/2059 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/31761 ,  H01J2237/31793

Abstract: A multi charged particle beam writing apparatus according to one aspect of the present invention includes a plurality of first blankers to respectively perform blanking deflection of a corresponding beam in multiple beams having passed through the plurality of openings of the aperture member, a plurality of second blankers to deflect a defective beam in the multiple beams having passed through the plurality of openings of the aperture member to be in a direction orthogonal to a deflection direction of the plurality of first blankers, a blanking aperture member to block each of beams which were deflected to be in a beam off state by at least one of the plurality of first blankers and the plurality of second blankers, and a detection processing unit to detect a defective beam in the multiple beams having passed through the plurality of openings of the aperture member.

Abstract translation: 根据本发明的一个方面的多带电粒子束书写装置包括多个第一消隐件，以分别对通过所述孔构件的多个开口的多个光束中的相应光束执行消隐偏转;多个第二消隐器 使已经穿过孔径构件的多个开口的多个光束中的有缺陷的光束偏转成与多个第一消光器的偏转方向正交的方向;消隐孔径构件，用于阻挡被偏转到 通过所述多个第一消隐器和所述多个第二消隐器中的至少一个处于关断状态，以及检测处理单元，用于检测已经穿过所述光圈元件的所述多个开口的所述多个光束中的有缺陷光束。

公开(公告)号：US09269537B2

公开(公告)日：2016-02-23

申请号：US13892806

申请日：2013-05-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Nan-Hsin Tseng ,  Ramakrishnan Krishnan

IPC: H01J37/30 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/3007 ,  H01J37/045 ,  H01J37/147 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/30433 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31789

Abstract: The present disclosure provides one embodiment of a reflective electron-beam (e-beam) lithography system. The reflective e-beam lithography system includes an e-beam source to generate an e-beam; a digital pattern generator (DPG) having a plurality of pixels that are dynamically and individually controllable to reflect the e-beam; a substrate stage designed to secure a substrate and being operable to move the substrate; an e-beam lens module configured to project the e-beam from the DPG to the substrate; and an alignment gate configured between the e-beam source and the DPG, wherein the alignment gate is operable to modulate an intensity of the e-beam.

Abstract translation: 本公开提供了反射电子束（e-beam）光刻系统的一个实施例。 反射电子束光刻系统包括用于产生电子束的电子束源; 具有多个像素的数字图案发生器（DPG），所述多个像素被动态地和单独地控制以反映所述电子束; 衬底台，设计用于固定衬底并且可操作以移动衬底; 电子束透镜模块，被配置为将所述电子束从所述DPG投影到所述基板; 以及配置在所述电子束源和所述DPG之间的对准门，其中所述对准门可操作以调制所述电子束的强度。

公开(公告)号：US09245715B2

公开(公告)日：2016-01-26

申请号：US14054314

申请日：2013-10-15

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tomoyuki Morita ,  Masato Muraki

IPC: H01J37/147 ,  H01J37/302 ,  H01J37/317 ,  H01J37/04 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J2237/0432 ,  H01J2237/0435 ,  H01J2237/31761

Abstract: The present invention provides a drawing apparatus for performing drawing on a substrate with a plurality of charged particle beams, comprising a blanker array including first and second groups, each of which includes at least one blanker, a deflector configured to deflect the plurality of charged particle beams to scan the plurality of charged particle beams on the substrate, and a controller configured to respectively supply first and second control signals to the first and second groups at first and second timings, wherein the first and second groups are respectively arranged at such relative positions that a positional difference between respective drawing regions thereof, due to a difference between the first and second timings, in a scanning direction of the deflector is compensated for.

Abstract translation: 本发明提供了一种用于在具有多个带电粒子束的衬底上进行绘图的绘图装置，包括包括第一组和第二组的消隐器阵列，每个组包括至少一个消隐器，偏转器构造成使多个带电粒子 光束扫描基板上的多个带电粒子束;以及控制器，被配置为在第一和第二定时向第一组和第二组分别提供第一和第二控制信号，其中第一组和第二组分别布置在这样的相对位置 补偿了偏转器的扫描方向上由于第一和第二定时之间的差异而导致的各个绘制区域之间的位置差异。

公开(公告)号：US09236223B2

公开(公告)日：2016-01-12

申请号：US14155604

申请日：2014-01-15

Applicant: NuFlare Technology, Inc.

Inventor： Takahito Nakayama ,  Takanao Touya

IPC: H01J37/317 ,  H01J37/04 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01J37/045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/10 ,  H01J37/3174 ,  H01J2237/30461 ,  H01J2237/31776

Abstract: A charged particle beam writing apparatus according to one aspect of the present invention includes an emission unit to emit a charged particle beam, an electron lens to converge the charged particle beam, a blanking deflector, arranged backward of the electron lens with respect to a direction of an optical axis, to deflect the charged particle beam in the case of performing a blanking control of switching between beam-on and beam-off, a blanking aperture member, arranged backward of the blanking deflector with respect to the direction of the optical axis, to block the charged particle beam having been deflected to be in a beam-off state, and a magnet coil, arranged in a center height position of the blanking deflector, to deflect the charged particle beam.

Abstract translation: 根据本发明的一个方面的带电粒子束写入装置包括发射带电粒子束的发射单元，使带电粒子束会聚的电子透镜，相对于方向布置在电子透镜的后方的消隐偏转器 的光轴，以便在执行在射束和射束之间切换的消隐控制的情况下使带电粒子束偏转;消隐孔径构件，相对于光轴的方向布置在消隐偏转器的后方 以阻挡被偏转成为光束断开状态的带电粒子束，以及布置在消隐偏转器的中心高度位置的磁体线圈，以偏转带电粒子束。

公开(公告)号：US20150340195A1

公开(公告)日：2015-11-26

申请号：US14296960

申请日：2014-06-05

Applicant: KLA-Tencor Corporation

Inventor： Alan D. BRODIE ,  Yehiel GOTKIS ,  Allen CARROLL ,  Leonid BARANOV

IPC: H01J37/10 ,  H01J37/317

CPC classification number: H01L21/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/0437 ,  H01J2237/1205 ,  Y10T156/10

Abstract: One embodiment relates to a pillar-supported array of micro electron lenses. The micro-lens array includes a base layer on a substrate, the base layer including an array of base electrode pads and an insulating border surrounding the base electrode pads so as to electrically isolate the base electrode pads from each other. The micro-lens array further includes an array of lens holes aligned with the array of base electrode pads and one or more stacked electrode layers having openings aligned with the array of lens holes. The micro-lens array further includes one or more layers of insulating pillars, each layer of insulating pillars supporting a stacked electrode layer. Another embodiment relates to a method of fabricating a pillar-supported array of micro electron lenses. Other embodiments, aspects and features are also disclosed.

Abstract translation: 一个实施例涉及一种立柱支撑的微电子透镜阵列。 微透镜阵列包括在基板上的基底层，基底层包括基极电极焊盘的阵列和围绕基极电极焊盘的绝缘边界，以将基极电极彼此电隔离。 微透镜阵列还包括与基极阵列阵列对准的透镜孔阵列和一个或多个具有与透镜孔阵列对准的开口的堆叠电极层。 微透镜阵列还包括一层或多层绝缘柱，每层绝缘柱支撑堆叠的电极层。 另一实施例涉及一种制造支柱支撑的微电子透镜阵列的方法。 还公开了其它实施例，方面和特征。

公开(公告)号：US09184026B2

公开(公告)日：2015-11-10

申请号：US14626891

申请日：2015-02-19

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan-Jaco Wieland

IPC: H01J37/30 ,  H01J37/302 ,  G21K5/04 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/3174 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/31769

Abstract: The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0

Abstract translation: 本发明涉及一种用于执行带电粒子束邻近效应校正的方法，包括以下步骤：使用一个或多个带电粒子束将待图案化的数字布局图案接收到目标上; 选择包括α和β接近度函数之和的基本接近函数，其中所述α接近函数模拟短距离邻近效应，并且所述β接近函数模拟远距离邻近效应，其中恒定和近似函数 被定义为所述总和中β接近函数和α接近函数之间的比率，其中0 <＆eegr; <1; 确定对应于所述基本邻近效应函数的修改的接近度函数，其中所述α邻近函数已被Dirac delta函数代替，并且使用电子处理器执行所述数字布局图案与所述修改的接近函数的去卷积，以产生经校正的 布局模式。

公开(公告)号：US20150311030A1

公开(公告)日：2015-10-29

申请号：US14694959

申请日：2015-04-23

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Hans Löschner

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/252 ,  H01J37/31

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/09 ,  H01J37/147 ,  H01J37/3174 ,  H01J2237/0435

Abstract: In a charged-particle multi-beam processing apparatus for exposure of a target with a plurality of parallel particle-optical columns, each column has a beam shaping device forming the shape of the illuminating beam into a desired pattern composed of a multitude of sub-beams, by means of an aperture array device, which defines the shape of a respective sub-beam by means of an array of apertures, and a deflection array device selectively deflecting sub-beams off their nominal paths; thus, only the non-selected sub-beams can reach the target. According to many embodiments of the invention each beam shaping device is provided with a first field-boundary device and a second field-boundary device, which are the first and last plate elements traversed by the beam. One of the first and second field-boundary devices defines a field-free space interval so as to accommodate feeding lines for controlling the deflection array device.

Abstract translation: 在用多个平行粒子光学柱曝光靶的带电粒子多光束处理装置中，每列具有将照明光束的形状形成为由多个子像素组成的期望图案的光束整形装置， 通过孔阵列器件，其通过孔阵列限定相应子光束的形状，并且偏转阵列器件选择性地使子光束偏离其标称通路; 因此，只有未选择的子光束才能到达目标。 根据本发明的许多实施例，每个光束整形装置设置有第一场边界装置和第​​二场边界装置，第一场边界装置和第​​二场边界装置是由横梁穿过的第一和最后的板件。 第一和第二场边界装置之一限定了无场空间间隔，以适应用于控制偏转阵列装置的馈线。

公开(公告)号：US20150303029A1

公开(公告)日：2015-10-22

申请号：US14755376

申请日：2015-06-30

Applicant: NuFlare Technology, Inc.

Inventor： Hironobu MATSUMOTO

IPC: H01J37/24 ,  H01J37/20 ,  H01J37/04 ,  H01J37/317

CPC classification number: H01J37/243 ,  H01J37/045 ,  H01J37/20 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/31754 ,  H01J2237/31774

Abstract: A multi charged particle beam writing apparatus includes a dose calculation unit to calculate a first dose resolving the resist of the target object, for a first beam of the multiple beams, corresponding to a pattern forming region, in which a pattern is arranged; and to calculate a second dose not resolving the resist, for a second beam of the multiple beams, corresponding to a no-pattern forming region, which surrounds the whole perimeter of the pattern and in which no pattern is arranged, and a deflection control unit to control a plural blankers so that a dose of the first beam is to be the first dose calculated and a dose of the second beam is to be the second dose calculated.

Abstract translation: 一种多带电粒子束写入装置，包括剂量计算单元，用于对应于布置有图案的图案形成区域，计算针对所述多个波束的第一波束的目标物体的抗蚀剂的第一剂量; 并且计算不分辨抗蚀剂的第二光束，对应于围绕图案的整个周边的无图案形成区域的多个光束的第二光束，其中不设置图案，偏转控制单元 以控制多个阻塞物，使得第一光束的剂量将被计算为第一剂量，并且第二光束的剂量将被计算为第二剂量。

公开(公告)号：US20150303026A1

公开(公告)日：2015-10-22

申请号：US14663971

申请日：2015-03-20

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA

IPC: H01J37/147 ,  H01J37/10 ,  H01J37/04

CPC classification number: H01J37/1471 ,  H01J37/045 ,  H01J37/10 ,  H01J2237/043 ,  H01J2237/063 ,  H01J2237/06375 ,  H01J2237/1502

Abstract: An electron beam writing apparatus includes an electron gun system to emit an electron beam, a height adjustment unit, arranged at the downstream side compared to the electron gun system with respect to the optical axis direction, to variably adjust a height position of the electron gun system, an electron lens, arranged at the downstream side compared to the height adjustment unit with respect to the optical axis direction, to converge the electron beam, a lens control unit to control, for each variably adjusted and changed height position of the electron gun system, the electron lens such that the electron beam forms a crossover at a predetermined position, and an objective lens, arranged at the downstream side compared to the electron lens with respect to the optical axis direction, to focus the electron beam having passed the electron lens.

Abstract translation: 电子束写入装置包括与电子枪系统相对于光轴方向布置在下游侧的发射电子束的电子枪系统，高度调节单元，以可变地调节电子枪的高度位置 系统，电子透镜，相对于光轴方向布置在与高度调节单元相比的下游侧，以使电子束会聚;透镜控制单元，用于控制电子枪的每个可变调节和改变的高度位置 系统，使电子束在预定位置形成交叉的电子透镜，以及与电子透镜相对于光轴方向配置在下游侧的物镜，以聚焦通过电子的电子束 镜片。