PILLAR-SUPPORTED ARRAY OF MICRO ELECTRON LENSES
    1.
    发明申请
    PILLAR-SUPPORTED ARRAY OF MICRO ELECTRON LENSES 有权
    支撑支撑的微电子镜片阵列

    公开(公告)号:US20150340195A1

    公开(公告)日:2015-11-26

    申请号:US14296960

    申请日:2014-06-05

    Abstract: One embodiment relates to a pillar-supported array of micro electron lenses. The micro-lens array includes a base layer on a substrate, the base layer including an array of base electrode pads and an insulating border surrounding the base electrode pads so as to electrically isolate the base electrode pads from each other. The micro-lens array further includes an array of lens holes aligned with the array of base electrode pads and one or more stacked electrode layers having openings aligned with the array of lens holes. The micro-lens array further includes one or more layers of insulating pillars, each layer of insulating pillars supporting a stacked electrode layer. Another embodiment relates to a method of fabricating a pillar-supported array of micro electron lenses. Other embodiments, aspects and features are also disclosed.

    Abstract translation: 一个实施例涉及一种立柱支撑的微电子透镜阵列。 微透镜阵列包括在基板上的基底层,基底层包括基极电极焊盘的阵列和围绕基极电极焊盘的绝缘边界,以将基极电极彼此电隔离。 微透镜阵列还包括与基极阵列阵列对准的透镜孔阵列和一个或多个具有与透镜孔阵列对准的开口的堆叠电极层。 微透镜阵列还包括一层或多层绝缘柱,每层绝缘柱支撑堆叠的电极层。 另一实施例涉及一种制造支柱支撑的微电子透镜阵列的方法。 还公开了其它实施例,方面和特征。

    PATTERN DATA SYSTEM FOR HIGH-PERFORMANCE MASKLESS ELECTRON BEAM LITHOGRAPHY
    2.
    发明申请
    PATTERN DATA SYSTEM FOR HIGH-PERFORMANCE MASKLESS ELECTRON BEAM LITHOGRAPHY 有权
    用于高性能MASK电子束光刻的图形数据系统

    公开(公告)号:US20130205267A1

    公开(公告)日:2013-08-08

    申请号:US13754760

    申请日:2013-01-30

    Inventor: Allen CARROLL

    Abstract: One embodiment relates to a pattern data system for maskless electron beam lithography. The system includes a renderer that receives pre-exposure die image data, performs rendering of the pre-exposure die image data to generate raster data. The system further includes a plurality of data distributors communicatively coupled to the renderer. Each data distributor adapts the raster data to characteristics of an associated pattern writer. Other embodiments, aspects and feature are also disclosed.

    Abstract translation: 一个实施例涉及无掩模电子束光刻的图案数据系统。 该系统包括接收预曝光裸片图像数据的渲染器,执行预曝光裸片图像数据的渲染以产生光栅数据。 该系统还包括通信地耦合到渲染器的多个数据分发器。 每个数据分配器将栅格数据与相关模式写入器的特性进行匹配。 还公开了其它实施例,方面和特征。

    METHODS OF MEASURING OVERLAY ERRORS IN AREA-IMAGING E-BEAM LITHOGRAPHY
    3.
    发明申请
    METHODS OF MEASURING OVERLAY ERRORS IN AREA-IMAGING E-BEAM LITHOGRAPHY 有权
    测量区域成像电子束平移中的重叠误差的方法

    公开(公告)号:US20140199618A1

    公开(公告)日:2014-07-17

    申请号:US13874266

    申请日:2013-04-30

    Abstract: One embodiment relates to a method of measuring overlay errors for a programmable pattern, area-imaging electron beam lithography apparatus. Patterned cells of an overlay measurement target array may be printed in swaths such that they are superposed on patterned cells of a first (base) array. In addition, the overlay array may have controlled-exposure areas distributed within the swaths. The superposed cells of the overlay and base arrays are imaged. The overlay errors are then measured based on distortions between the two arrays in the image data. Alternatively, non-imaging methods, such as using scatterometry, may be used. Another embodiment relates to a method for correcting overlay errors for an electron beam lithography apparatus. Overlay errors for a pattern to be printed are determined based on within-swath exposure conditions. The pattern is then pre-distorted to compensate for the overlay errors. Other embodiments, aspects and features are also disclosed.

    Abstract translation: 一个实施例涉及一种测量可编程图案,区域成像电子束光刻设备的重叠误差的方法。 覆盖测量目标阵列的图案化单元可以以条状印刷,使得它们叠加在第一(基底)阵列的图案化单元上。 此外,叠加阵列可以具有分布在条带内的受控曝光区域。 覆盖层和基底阵列的叠加单元被成像。 然后基于图像数据中的两个阵列之间的失真来测量重叠误差。 或者,可以使用诸如使用散射法的非成像方法。 另一实施例涉及一种用于校正电子束光刻设备的覆盖误差的方法。 基于条纹曝光条件确定要打印的图案的叠加错误。 然后,该图案被预失真以补偿重叠错误。 还公开了其它实施例,方面和特征。

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