METHODS OF MEASURING OVERLAY ERRORS IN AREA-IMAGING E-BEAM LITHOGRAPHY
    1.
    发明申请
    METHODS OF MEASURING OVERLAY ERRORS IN AREA-IMAGING E-BEAM LITHOGRAPHY 有权
    测量区域成像电子束平移中的重叠误差的方法

    公开(公告)号:US20140199618A1

    公开(公告)日:2014-07-17

    申请号:US13874266

    申请日:2013-04-30

    Abstract: One embodiment relates to a method of measuring overlay errors for a programmable pattern, area-imaging electron beam lithography apparatus. Patterned cells of an overlay measurement target array may be printed in swaths such that they are superposed on patterned cells of a first (base) array. In addition, the overlay array may have controlled-exposure areas distributed within the swaths. The superposed cells of the overlay and base arrays are imaged. The overlay errors are then measured based on distortions between the two arrays in the image data. Alternatively, non-imaging methods, such as using scatterometry, may be used. Another embodiment relates to a method for correcting overlay errors for an electron beam lithography apparatus. Overlay errors for a pattern to be printed are determined based on within-swath exposure conditions. The pattern is then pre-distorted to compensate for the overlay errors. Other embodiments, aspects and features are also disclosed.

    Abstract translation: 一个实施例涉及一种测量可编程图案,区域成像电子束光刻设备的重叠误差的方法。 覆盖测量目标阵列的图案化单元可以以条状印刷,使得它们叠加在第一(基底)阵列的图案化单元上。 此外,叠加阵列可以具有分布在条带内的受控曝光区域。 覆盖层和基底阵列的叠加单元被成像。 然后基于图像数据中的两个阵列之间的失真来测量重叠误差。 或者,可以使用诸如使用散射法的非成像方法。 另一实施例涉及一种用于校正电子束光刻设备的覆盖误差的方法。 基于条纹曝光条件确定要打印的图案的叠加错误。 然后,该图案被预失真以补偿重叠错误。 还公开了其它实施例,方面和特征。

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