公开(公告)号：US12119203B2

公开(公告)日：2024-10-15

申请号：US17739830

申请日：2022-05-09

Applicant: CANON ANELVA CORPORATION

Inventor： Yasushi Yasumatsu ,  Naoyuki Okamoto ,  Masashi Tsujiyama ,  Fumihito Suzuki

IPC: H01J37/30 ,  B08B3/08 ,  H01J27/02 ,  H01J37/063 ,  H01J37/08 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/3053 ,  B08B3/08 ,  H01J27/024 ,  H01J37/063 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/3151

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

公开(公告)号：US11881378B2

公开(公告)日：2024-01-23

申请号：US17743965

申请日：2022-05-13

Applicant: Applied Materials, Inc.

Inventor： Glen F. R. Gilchrist ,  Yufeng Qiu

IPC: H01J37/30 ,  H01J37/305

CPC classification number: H01J37/3007 ,  H01J37/3053 ,  H01J2237/3151

Abstract: Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a plurality of channels for delivering one or more radical beams to a workpiece, wherein each of the plurality of channels has a lengthwise axis oriented at a non-zero angle relative to a perpendicular extending from a main surface of the workpiece, wherein each channel of the plurality of channels has a channel length and a channel width, and wherein the channel width varies along the channel length.

公开(公告)号：US11715622B2

公开(公告)日：2023-08-01

申请号：US17393932

申请日：2021-08-04

Applicant: KLA CORPORATION

Inventor： Gildardo Delgado ,  Vera (Guorong) Zhuang ,  John Savee ,  Evgeniia Butaeva ,  Gary V. Lopez Lopez ,  Grace Chen

IPC: H01J37/305 ,  H01J37/20 ,  H01J37/08

CPC classification number: H01J37/3053 ,  H01J37/08 ,  H01J37/20 ,  H01J2237/3151 ,  H01J2237/3174

Abstract: A material recovery system for an optical component includes a reservoir containing gas and configured to supply a gas flow containing the gas. The material recovery system also includes an ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam. The ion beam is configured to be directed to the optical component to remove at least a portion of a F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination.

公开(公告)号：US10003017B2

公开(公告)日：2018-06-19

申请号：US14638731

申请日：2015-03-04

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yasuyuki Sonoda

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L43/12 ,  H01J37/32 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32715 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/3151 ,  H01L43/02

Abstract: According to one embodiment, an etching apparatus includes an etching chamber, a stage in the etching chamber, a plasma generator in the etching chamber, the plasma generator being opposite to the stage and irradiating an ion beam toward the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a first driver changing a beam angle between a direction which is perpendicular to an upper surface of the stage and the direction in which the ion beam is irradiated, and a second driver which rotates the stage on the rotational axis.

公开(公告)号：US20180061644A1

公开(公告)日：2018-03-01

申请号：US15687874

申请日：2017-08-28

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/28 ,  H01L29/423 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/28158 ,  H01J2237/30472 ,  H01J2237/3151 ,  H01L21/2652 ,  H01L21/28114 ,  H01L21/31116 ,  H01L21/32136 ,  H01L29/045 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

Abstract: A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

公开(公告)号：US09863036B2

公开(公告)日：2018-01-09

申请号：US14697441

申请日：2015-04-27

Applicant: Plasma-Therm NES LLC

Inventor： Sarpangala H. Hegde ,  Vincent Lee ,  Peter Goglia

IPC: B23P11/00 ,  C23C14/50 ,  C23C14/22 ,  H01J37/30 ,  H01J37/20

CPC classification number: C23C14/505 ,  C23C14/221 ,  H01J37/20 ,  H01J37/30 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/3142 ,  H01J2237/3151

Abstract: A planetary arm coupled to a tilt actuator moves a wafer in oscillatory motion along an arcuate path to expose a surface of the wafer to an incident ion beam for deposition and/or etching processing of thin film structures on the surface of the wafer. A wafer holder on an end of the planetary arm may be driven in rotation while the planetary arm executes oscillatory motion at a selected tilt angle relative to an incident ion beam. A slit support plate provides controllable exposure of the wafer to the incident beam. Embodiments are suitable for use in wafer deposition machines and/or wafer etching machines.

公开(公告)号：US09761412B2

公开(公告)日：2017-09-12

申请号：US15306510

申请日：2014-05-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Kento Horinouchi ,  Atsushi Kamino ,  Toru Iwaya ,  Hisayuki Takasu

IPC: H01J37/305 ,  H01J37/30 ,  G01N1/32 ,  H01J37/20 ,  H01J37/09

CPC classification number: H01J37/305 ,  G01N1/32 ,  H01J37/09 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/045 ,  H01J2237/3151

Abstract: Provided is a technology for suppressing a heat rise in a sample, the heat rise being generated due to ion beam irradiation at a low acceleration voltage. A blocking plate, which is different from a mask, is disposed in front of a sample. The blocking plate has an opening that overlaps a processing surface, and ion beams pass only through the opening of the blocking plate, and in the areas excluding the opening, the ion beams are blocked by the blocking plate, and the sample is not irradiated thereby. Furthermore, the heat rise in the sample is further suppressed by cooling the blocking plate.

公开(公告)号：US09704689B2

公开(公告)日：2017-07-11

申请号：US14890114

申请日：2014-05-12

Applicant: Oxford Instruments Nanotechnology Tools Limited

Inventor： Christian Lang ,  Peter Statham ,  Cheryl Hartfield

IPC: H01J37/285 ,  H01J37/30 ,  H01J37/305 ,  H01J37/304

CPC classification number: H01J37/304 ,  H01J37/3053 ,  H01J2237/30466 ,  H01J2237/3151

Abstract: A method is provided of reducing the thickness of a region of a target sample. Reference data is obtained that is representative of x-rays generated by a particle beam being directed upon part of a reference sample under a first set of beam conditions. Under a second set of beam conditions the particle beam is directed upon the region of the target sample. The resultant x-rays are monitored as monitored data. Output data are then calculated based upon the reference and the monitored data. Material is then removed from the region, so as to reduce its thickness, in accordance with the output data.

公开(公告)号：US20170032937A1

公开(公告)日：2017-02-02

申请号：US14811272

申请日：2015-07-28

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Daniel Distaso ,  Svetlana B. Radovanov ,  Joseph P. Dzengeleski

IPC: H01J37/32 ,  H01J27/02 ,  H01J27/16 ,  H01J37/08

CPC classification number: H01J37/32146 ,  H01J27/024 ,  H01J27/028 ,  H01J27/16 ,  H01J37/08 ,  H01J37/3211 ,  H01J37/32422 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/3151 ,  H01J2237/31701 ,  H01J2237/31732

Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

Abstract translation: 公开了一种用于产生负离子束的装置和方法。 该装置包括具有提取孔的RF离子源。 设置在电介质窗附近的天线由脉冲RF电源供电。 当RF电源被激活时，产生主要包含正离子和电子的等离子体。 当RF电源被禁用时，等离子体转换成离子离子等离子体。 当RF电源停用时，可以从RF离子源提取负离子。 负带状离子束形式的这些负离子可以以特定的入射角朝向工件。 此外，通过每个周期多次脉冲偏置电源，可以从相同的离子源中提取正离子束和负离子束。

公开(公告)号：US09536748B2

公开(公告)日：2017-01-03

申请号：US14520070

申请日：2014-10-21

Applicant: Lam Research Corporation

Inventor： Ivan L. Berry, III ,  Thorsten Lill

IPC: H01L21/336 ,  H01L21/3065 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/308 ,  H01J37/305 ,  H01J37/302 ,  H01L29/775

CPC classification number: H01J37/3023 ,  H01J37/3056 ,  H01J37/32422 ,  H01J37/32752 ,  H01J2237/202 ,  H01J2237/30472 ,  H01J2237/3151 ,  H01J2237/3174 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67069 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/786 ,  H01L29/78696

Abstract: Various embodiments herein relate to methods and apparatus for performing anisotropic ion beam etching to form arrays of channels. The channels may be formed in semiconductor material, and may be used in a gate-all-around device. Generally speaking, a patterned mask layer is provided over a layer of semiconductor material. Ions are directed toward the substrate while the substrate is positioned in two particular orientations with respect to the ion trajectory. The substrate switches between these orientations such that ions impinge upon the substrate from two opposite angles. The patterned mask layer shadows/protects the underlying semiconductor material such that the channels are formed in intersecting shadowed regions.

Abstract translation: 本文的各种实施例涉及用于进行各向异性离子束蚀刻以形成通道阵列的方法和装置。 通道可以形成在半导体材料中，并且可以用在栅极全能器件中。 一般来说，在半导体材料层上提供图案化掩模层。 当衬底相对于离子轨迹定位在两个特定取向中时，离子指向衬底。 衬底在这些取向之间切换，使得离子从两个相反的角度冲击衬底。 图案化掩模层阴影/保护下面的半导体材料，使得沟道形成在相交的阴影区域中。