SRAM DEVICE INCLUDING OXIDE SEMICONDUCTOR

    公开(公告)号:US20230102625A1

    公开(公告)日:2023-03-30

    申请号:US17529817

    申请日:2021-11-18

    Abstract: Provided is a static random-access memory (SRAM) device. The SRAM device includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes a first NMOS area and a second NMOS area vertically separated from the PMOS area with the first NMOS area therebetween, a first transistor including a first gate electrode disposed on the PMOS area, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, a second transistor including a second gate electrode disposed in the first NMOS area and a second channel vertically overlapping the second gate electrode, and a third transistor including a third gate electrode disposed in the second NMOS area and a third channel vertically overlapping the third gate electrode, wherein the first channel includes silicon, wherein the second channel and the third channel include an oxide semiconductor.

    DISPLAY PANEL, DISPLAY DEVICE INCLUDING THE SAME AND OPERATION METHOD THEREOF
    37.
    发明申请
    DISPLAY PANEL, DISPLAY DEVICE INCLUDING THE SAME AND OPERATION METHOD THEREOF 审中-公开
    显示面板,包括其的显示装置及其操作方法

    公开(公告)号:US20160247457A1

    公开(公告)日:2016-08-25

    申请号:US15047357

    申请日:2016-02-18

    Abstract: A display panel includes pixels, the pixels being configured to be driven in either a reflection mode or a light emission mode, the pixels comprises a first substrate comprising a light-transmitting material, a second substrate opposite to the first substrate, a light emitting element layer on the first electrode, the light emitting element layer comprising a light emitting material, the light emitting material being configured to emit light in the light emission mode by an oxidation of the light emitting material and a reduction of the light emitting material, a second electrode on a surface of the second substrate in a direction of the first substrate, a reflective element layer on the second electrode, the reflective element layer comprising a reflective material, the reflective material being configured to be colored or bleached in the reflection mode by an oxidation of the reflective material and a reduction of the reflective material.

    Abstract translation: 显示面板包括像素,像素被配置为以反射模式或发光模式被驱动,像素包括第一衬底,其包括透光材料,与第一衬底相对的第二衬底,发光元件 所述发光元件层包括发光材料,所述发光材料被配置为通过所述发光材料的氧化和所述发光材料的减少在所述发光模式中发光,第二 在第二基板的表面上在第一基板的方向上的反射元件层,在第二电极上的反射元件层,反射元件层包括反射材料,反射材料被配置为以反射模式被着色或漂白 反射材料的氧化和反射材料的减少。

    ORGANIC LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    40.
    发明申请
    ORGANIC LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光二极管及其制造方法

    公开(公告)号:US20150340659A1

    公开(公告)日:2015-11-26

    申请号:US14662653

    申请日:2015-03-19

    CPC classification number: H01L51/56 H01L51/5203 H01L51/5268

    Abstract: Provided is an organic light emitting diodes (OLED) and method of manufacturing the OLED. The OLED includes: a substrate; a light scattering layer having an uneven shape on the substrate; a transparent electrode film provided directly on and in contact with the light scattering layer; an organic light emitting layer on the transparent electrode film; and an electrode on the organic light emitting layer.The method of manufacturing the OLED includes: disposing a light scattering layer on a substrate; providing a transparent electrode film on the light scattering layer; and transferring the transparent electrode film to be directly on and in contact with the light scattering layer.

    Abstract translation: 提供了一种有机发光二极管(OLED)和OLED的制造方法。 OLED包括:基底; 在基板上具有不均匀形状的光散射层; 直接设置在光散射层上并与光散射层接触的透明电极膜; 透明电极膜上的有机发光层; 和有机发光层上的电极。 制造OLED的方法包括:在基板上设置光散射层; 在光散射层上提供透明电极膜; 并且将透明电极膜转印成与光散射层直接接触并接触。

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