公开(公告)号：US20090262467A1

公开(公告)日：2009-10-22

申请号：US12106363

申请日：2008-04-21

Applicant: Haiwen Xi ,  Song S. Xue

Inventor： Haiwen Xi ,  Song S. Xue

IPC: G11B5/33

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1673

Abstract: A magnetic junction memory array and methods of using the same are described. The magnetic junction memory array includes a plurality of electrically conductive word lines extending in a first direction, a plurality of electrically conductive bit lines extending in a second direction and forming a cross-point array with the plurality of electrically conductive word lines, and a memory cell proximate to, at least selected, cross-points forming a magnetic junction memory array. Each memory cell includes a magnetic pinned layer electrically between a magnetic bit and an isolation transistor. The isolation transistor has a current source and a gate. The current source is electrically coupled to the cross-point bit line and the gate is electrically coupled to the cross-point word line. An electrically conductive cover layer is disposed on and in electrical communication with the magnetic bits.

Abstract translation: 描述了磁结存储器阵列及其使用方法。 磁结存储器阵列包括沿第一方向延伸的多个导电字线，沿第二方向延伸的多个导电位线，并与多个导电字线形成交叉点阵列，以及存储器 靠近，至少选择的形成磁结存储器阵列的交叉点的单元。 每个存储单元包括在磁性位和隔离晶体管之间电气的磁性固定层。 隔离晶体管具有电流源和栅极。 电流源电耦合到交叉点位线，并且栅极电耦合到交叉点字线。 导电覆盖层设置在与磁头电气连接的位置上。

公开(公告)号：US08519498B2

公开(公告)日：2013-08-27

申请号：US13613002

申请日：2012-09-13

Applicant: Yuankai Zheng ,  Zheng Gao ,  Wenzhong Zhu ,  Wonjoon Jung ,  Haiwen Xi

Inventor： Yuankai Zheng ,  Zheng Gao ,  Wenzhong Zhu ,  Wonjoon Jung ,  Haiwen Xi

IPC: H01L29/82 ,  G11C11/02

CPC classification number: H01F10/329 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

Abstract: A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

Abstract translation: 磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。 第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

公开(公告)号：US08495118B2

公开(公告)日：2013-07-23

申请号：US12399127

申请日：2009-03-06

Applicant: Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

Inventor： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

IPC: G06F7/58 ,  G11C11/00 ,  G11C7/00

CPC classification number: G11C11/1675 ,  G01R33/098 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1697

Abstract: A random number generator device that utilizes a magnetic tunnel junction. An AC current source is in electrical connection to the magnetic tunnel junction to provide an AC current having an amplitude and a frequency through the free layer of the magnetic tunnel junction, the AC current configured to switch the magnetization orientation of the free layer via thermal magnetization. A read circuit is used to determine the relative orientation of the free layer magnetization in relation to the reference layer magnetization orientation.

Abstract translation: 利用磁性隧道结的随机数发生装置。 AC电流源与磁性隧道结电连接以提供具有通过磁性隧道结的自由层的振幅和频率的AC电流，AC电流被配置为通过热磁化来切换自由层的磁化取向 。 读取电路用于确定自由层磁化相对于参考层磁化取向的相对取向。

公开(公告)号：US08466525B2

公开(公告)日：2013-06-18

申请号：US13040163

申请日：2011-03-03

Applicant: Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

Inventor： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

IPC: H01L29/82 ,  G11C11/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

Abstract translation: 用于将数据写入非易失性存储单元的装置和相关方法，例如自旋转矩传递随机存取存储器（STRAM）。 根据一些实施例，电阻感测元件（RSE）具有热辅助区域，磁性隧道结（MTJ）和固定区域。 当以旋转极化电流将第一逻辑状态写入MTJ时，固定和热辅助区域各自具有基本为零的净磁矩。 当第二逻辑状态被写入具有静态磁场的MTJ时，被钉扎区域具有基本为零的净磁矩，并且热辅助区域具有非零净磁矩。

公开(公告)号：US08455117B2

公开(公告)日：2013-06-04

申请号：US12397457

申请日：2009-03-04

Applicant: Kaizhong Gao ,  Haiwen Xi ,  Song Xue

Inventor： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

IPC: H01L29/82 ,  H01F10/32 ,  G11B5/74 ,  H01F10/00 ,  H01L21/02

CPC classification number: G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  H01F10/002 ,  H01L21/02112 ,  H01L29/82 ,  Y10T428/115

Abstract: A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.

Abstract translation: 提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。 壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。 因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

公开(公告)号：US08405171B2

公开(公告)日：2013-03-26

申请号：US12947516

申请日：2010-11-16

Applicant: Yuankai Zheng ,  Xiaohua Lou ,  Wei Tian ,  Zheng Gao ,  Haiwen Xi

Inventor： Yuankai Zheng ,  Xiaohua Lou ,  Wei Tian ,  Zheng Gao ,  Haiwen Xi

IPC: H01L29/82

CPC classification number: H01L43/02 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.

Abstract translation: 一种具有声阻隔绝缘层的非易失性存储单元的装置和相关方法。 根据各种实施例，磁性堆叠具有隧道结，铁磁自由层，被钉扎层和由电绝缘材料和热绝缘材料构成的绝缘层，其阻挡声子同时允许通过至少一个导电特征的电传输。

公开(公告)号：US08400867B2

公开(公告)日：2013-03-19

申请号：US13316972

申请日：2011-12-12

Applicant: Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

Inventor： Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

IPC: G11C8/00

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

Abstract translation: 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

公开(公告)号：US08400825B2

公开(公告)日：2013-03-19

申请号：US13491891

申请日：2012-06-08

Applicant: Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

Inventor： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  G11C11/1659

Abstract: Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

Abstract translation: 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US20130015543A1

公开(公告)日：2013-01-17

申请号：US13611029

申请日：2012-09-12

Applicant: Kaizhong Gao ,  Haiwen Xi

Inventor： Kaizhong Gao ,  Haiwen Xi

IPC: H01L29/82

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.

Abstract translation: 具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。 自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。 该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向在堆叠膜之外的面外磁性存储单元 平面，例如垂直于堆叠平面。

公开(公告)号：US08320169B2

公开(公告)日：2012-11-27

申请号：US13333598

申请日：2011-12-21

Applicant: Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

Inventor： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C11/1659 ,  G11C11/1675

Abstract: An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

Abstract translation: 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格