公开(公告)号：US09777366B2

公开(公告)日：2017-10-03

申请号：US14730530

申请日：2015-06-04

申请人： TOKYO ELECTRON LIMITED

发明人： Akinobu Kakimoto ,  Atsushi Endo ,  Takahiro Miyahara ,  Shigeru Nakajima ,  Satoshi Takagi ,  Kazumasa Igarashi

IPC分类号： H01L21/479 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

CPC分类号： C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

摘要： A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

公开(公告)号：US20170268102A1

公开(公告)日：2017-09-21

申请号：US15075481

申请日：2016-03-21

申请人： Goodrich Corporation

发明人： Ying She ,  Brian St. Rock

IPC分类号： C23C16/04 ,  C23C16/455 ,  C23C16/458 ,  C23C16/26

CPC分类号： C23C16/045 ,  C04B35/83 ,  C04B2235/614 ,  C23C16/26 ,  C23C16/45502 ,  C23C16/45523 ,  C23C16/4557 ,  C23C16/4581 ,  C23C16/4583 ,  C23C16/52 ,  F16D65/126

摘要： A system and method for enhancing a diffusion limited CVI/CVD process is provided. The system may densify a porous structure by flowing a reactant gas around the porous structure. A mass flow controller may be configured to pulse the flow rate of the reactant gas around the porous structure. The mass flow controller may pulse the flow rate from a nominal flow rate to a first flow rate. The mass flow controller may pulse the first flow rate back to the nominal flow rate or to a second flow rate. The mass flow controller may pulse the flow rate between the nominal flow rate, the first flow rate, and the second flow rate, as desired.

公开(公告)号：US20170250072A1

公开(公告)日：2017-08-31

申请号：US15437594

申请日：2017-02-21

申请人： Tokyo Electron Limited

发明人： Yuya Takamura

IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/02211 ,  H01L21/0228

摘要： A film forming method of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate accommodated in a processing container. The film forming method includes: storing the raw material gas in a reservoir; adsorbing the raw material gas on the substrate by supplying the raw material gas stored in the reservoir to the substrate; and reacting the raw material gas and the reactive gas with each other by supplying the reactive gas to the substrate on which the raw material gas is adsorbed to generate the reaction product; wherein the storing, the adsorbing, and the reacting are repeated a plurality of times, while a condition for the storing is changed at least once.

公开(公告)号：US20170213727A1

公开(公告)日：2017-07-27

申请号：US15468966

申请日：2017-03-24

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Atsushi MORIYA ,  Naoharu NAKAISO ,  Yugo ORIHASHI ,  Kotaro MURAKAMI

IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/46 ,  C23C16/24 ,  C23C16/56 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44

CPC分类号： H01L21/02609 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  C30B25/04 ,  C30B25/165 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02694 ,  H01L21/32055 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/67115 ,  H01L27/0688 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/10873 ,  H01L27/10891 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

摘要： A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

公开(公告)号：US20170198393A1

公开(公告)日：2017-07-13

申请号：US15304850

申请日：2015-04-29

申请人： IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

发明人： Ivo Stassen ,  Rob Ameloot ,  Dirk De Vos ,  Philippe M. Vereecken

IPC分类号： C23C16/455 ,  H01L21/02 ,  C23C16/44

CPC分类号： C23C16/45553 ,  C23C16/407 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45527 ,  C23C16/4554 ,  H01L21/02172 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/0228

摘要： A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of said organometallic compound precursor and said at least one organic ligand is provided only in vapour phase.

公开(公告)号：US09702039B2

公开(公告)日：2017-07-11

申请号：US14819038

申请日：2015-08-05

申请人： TOKYO ELECTRON LIMITED

发明人： Daisuke Nishide ,  Takashi Matsumoto ,  Munehito Kagaya ,  Ryota Ifuku

IPC分类号： C23C16/18 ,  C23C16/26 ,  C23C16/46 ,  C23C16/455 ,  H01L21/687 ,  C23C16/02 ,  C23C16/56 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C01B31/04 ,  H01L21/67

CPC分类号： C23C16/26 ,  C01B31/0453 ,  C01B32/186 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/45523 ,  C23C16/46 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/67103 ,  H01L21/68742 ,  H01L21/76864 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

公开(公告)号：US09698007B2

公开(公告)日：2017-07-04

申请号：US14807670

申请日：2015-07-23

申请人： Hitachi Kokusai Electric Inc.

发明人： Takaaki Noda ,  Satoshi Shimamoto ,  Shingo Nohara ,  Yoshiro Hirose ,  Kiyohiko Maeda

IPC分类号： C23C16/00 ,  H01L21/02 ,  C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C16/36 ,  C23C16/40

CPC分类号： H01L21/02126 ,  C23C16/36 ,  C23C16/401 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45578 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32559 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234

摘要： A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.

公开(公告)号：US20170183776A1

公开(公告)日：2017-06-29

申请号：US15117014

申请日：2015-01-28

申请人： Kenneth Scott Alexander Butcher

发明人： Kenneth Scott Alexander Butcher

IPC分类号： C23C16/50 ,  C23C16/455 ,  H01L21/02 ,  C23C16/06

CPC分类号： C23C16/50 ,  C23C16/06 ,  C23C16/303 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/515 ,  C30B25/16 ,  C30B29/406 ,  C30B30/02 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02653

摘要： There is disclosed a system for the electrostatic control of a metal wetting layer during deposition and a method of electrostatically controlling a metal wetting layer during deposition using a deposition system. In one example, control of the metal wetting layer is provided by changing or applying an electrostatic field acting on a deposited material or acting on a substrate on which a material is deposited. In another example, control is of the thickness of the metal wetting layer. In another example, control is of the presence or absence of the metal wetting layer. The metal wetting layer can be a liquid metal or liquid metal alloy, for example the metal wetting layer could be Boron, Aluminium, Indium, Gallium or Thallium. In another example, control is of the thickness, or presence, of a Gallium wetting layer during GaN film growth.

公开(公告)号：US20170183770A1

公开(公告)日：2017-06-29

申请号：US15459772

申请日：2017-03-15

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yasuaki KOMAE ,  Takashi NOGAMI ,  Hidenari YOSHIDA ,  Tomoshi TANIYAMA ,  Shigeru ODAKE

IPC分类号： C23C16/44 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/4412 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271

摘要： There is provided a substrate processing apparatus including a first exhaust system which is connected to a first pump and a second pump of a type different from the first pump and is configured to exhaust the interior of a process chamber, a second exhaust system which is connected to the second pump and is configured to exhaust the interior of the process chamber and a control part configured to control the first exhaust system and the second exhaust system such that, when the processing gas is exhausted from the interior of the process chamber, the interior of the process chamber is first exhausted by the second exhaust system, and then an exhaust path is switched from the second exhaust system to the first exhaust system after an internal pressure of the process chamber reaches a predetermined pressure, to exhaust the process chamber by the first exhaust system.

公开(公告)号：US09691609B2

公开(公告)日：2017-06-27

申请号：US15368337

申请日：2016-12-02

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Atsushi Moriya ,  Naoharu Nakaiso ,  Yugo Orihashi ,  Kotaro Murakami

IPC分类号： H01L21/20 ,  H01L21/02 ,  C23C16/24 ,  C23C16/455 ,  C30B25/04 ,  C30B25/18 ,  C30B25/16 ,  C30B25/20 ,  C30B29/06 ,  H01L21/324 ,  H01L27/108 ,  H01L27/06 ,  H01L27/11556 ,  H01L27/11582

CPC分类号： H01L21/02609 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  C30B25/04 ,  C30B25/165 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02694 ,  H01L21/32055 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/67115 ,  H01L27/0688 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/10873 ,  H01L27/10891 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

摘要： A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.