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公开(公告)号：US20220216052A1
公开(公告)日：2022-07-07
申请号：US17655638
申请日：2022-03-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Xin-Hua Huang , Ping-Yin Liu , Hung-Hua Lin , Hsun-Chung Kuang , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai , Xiaomeng Chen
Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.
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公开(公告)号：US20190155164A1
公开(公告)日：2019-05-23
申请号：US15939311
申请日：2018-03-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chien-Huei Chen , Hung-Yi Chung , Chao-Ting Hong , Cheng-Kuang Lee , Xiaomeng Chen , Teng-Cheng Hsu
IPC: G03F7/20 , G06T7/00 , H01J37/28 , G01N21/956 , G01N21/95
Abstract: A defect inspection method and a defect inspection system are provided. In the method, a plurality of candidate defect images are retrieved from inspection images obtained by at least one optical inspection tool performing hot scans on at least one wafer and a plurality of attributes are extracted from the inspection images. A random forest classifier including a plurality of decision trees for classifying the candidate defect images is created, wherein the decision trees are built with different subset of the attributes and the candidate defect images. A plurality of candidate defect images are retrieved from the optical inspection tool in runtime and applied to the decision trees, and classified into nuisance images and real defect images according to votes of the decision trees in which the nuisance images are filtered out. The real defect images with the votes over a confidence value are sampled for microscopic review.
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Patent Agency Ranking
公开(公告)号：US09130026B2
公开(公告)日：2015-09-08
申请号：US14016302
申请日：2013-09-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Han-Chin Chiu , Trinh Hai Dang , Hsing-Lien Lin , Cheng-Yuan Tsai , Chia-Shiung Tsai , Xiaomeng Chen
IPC: H01L29/778 , H01L29/66
CPC classification number: H01L29/778 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7785 , H01L29/7787
Abstract: Some embodiments of the present disclosure relates to a crystalline passivation layer for effectively passivating III-N surfaces. Surface passivation of HEMTs reduces or eliminates the surface effects that can otherwise degrade device performance. The crystalline passivation layer reduces the degrading effects of surface traps and provides a good interface between a III-nitride surface and an insulator (e.g., gate dielectric formed over the passivation layer).
Abstract translation: 本公开的一些实施方案涉及用于有效钝化III-N表面的晶体钝化层。 HEMT的表面钝化减少或消除了否则会降低器件性能的表面效应。 结晶钝化层降低了表面陷阱的降解效应，并且在III族氮化物表面和绝缘体之间提供良好的界面（例如，在钝化层上形成的栅极电介质）。
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24.发明申请Perpendicular Magnetic Random-Access Memory (MRAM) Formation by Direct Self-Assembly Method 有权通过直接自组装方法形成垂直磁性随机存取存储器（MRAM）公开(公告)号：US20150069541A1
公开(公告)日：2015-03-12
申请号：US14023552
申请日：2013-09-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Ming Chen , Chern-Yow Hsu , Szu-Yu Wang , Chung-Yi Yu , Chia-Shiung Tsai , Xiaomeng Chen
CPC classification number: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of magnetic random access memory (MRAM) cells with a minimum dimension below the lower resolution limit of some optical lithography techniques. A copolymer solution comprising first and second polymer species is spin-coated over a heterostructure which resides over a surface of a substrate. The heterostructure comprises first and second ferromagnetic layers which are separated by an insulating layer. The copolymer solution is subjected to self-assembly into a phase-separated material comprising a pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first polymer species is then removed, leaving a pattern of micro-domains of the second polymer species. A pattern of magnetic memory cells within the heterostructure is formed by etching through the heterostructure while utilizing the pattern of micro-domains as a hardmask.
Abstract translation: 本公开的一些实施例涉及一种实现具有低于某些光刻技术的较低分辨率极限的最小尺寸的磁性随机存取存储器（MRAM）单元的基本均匀图案的方法。 将包含第一和第二聚合物种类的共聚物溶液旋涂在位于基材表面上的异质结构上。 异质结构包括由绝缘层分开的第一和第二铁磁层。 将共聚物溶液自组装成包含第二聚合物种类的微畴图案的相分离材料在包含第一聚合物种类的聚合物基质内。 然后除去第一聚合物物质，留下第二聚合物物质的微畴图案。 通过在利用微畴图案作为硬掩模的同时蚀刻异质结构来形成异质结构内的磁记忆单元的图案。
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公开(公告)号：US08816358B1
公开(公告)日：2014-08-26
申请号：US13934296
申请日：2013-07-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shu-Ju Tsai , Yeur-Luen Tu , Cheng-Ta Wu , Cheng-Yuan Tsai , Chia-Shiung Tsai , Xiaomeng Chen
CPC classification number: H01L51/44 , H01L27/307 , H01L51/0037 , H01L51/4213
Abstract: Some embodiments of the present disclosure relate to an optical sensor. The optical sensor includes a first electrode disposed over a semiconductor substrate. A photoelectrical conversion element, which includes a p-type layer and an n-type layer, is arranged over the first electrode to convert one or more photons having wavelength falling within a predetermined wavelength range into an electrical signal. A second electrode is disposed over the photoelectrical conversion element. The second electrode is transparent in the predetermined wavelength range. A color filter element, which is made up of plasmonic nanostructures, is disposed over the second electrode.
Abstract translation: 本公开的一些实施例涉及光学传感器。 光学传感器包括设置在半导体衬底上的第一电极。 包括p型层和n型层的光电转换元件布置在第一电极上方，以将具有落入预定波长范围内的波长的一个或多个光子转换成电信号。 第二电极设置在光电转换元件上。 第二电极在预定波长范围内是透明的。 由等离子体激元纳米结构构成的滤色器元件设置在第二电极上。
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26.发明授权公开(公告)号：US10998494B2
公开(公告)日：2021-05-04
申请号：US16587499
申请日：2019-09-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Ming Chen , Chern-Yow Hsu , Szu-Yu Wang , Chung-Yi Yu , Chia-Shiung Tsai , Xiaomeng Chen
Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of magnetic random access memory (MRAM) cells with a minimum dimension below the lower resolution limit of some optical lithography techniques. A copolymer solution comprising first and second polymer species is spin-coated over a heterostructure which resides over a surface of a substrate. The heterostructure comprises first and second ferromagnetic layers which are separated by an insulating layer. The copolymer solution is subjected to self-assembly into a phase-separated material comprising a pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first polymer species is then removed, leaving a pattern of micro-domains of the second polymer species. A pattern of magnetic memory cells within the heterostructure is formed by etching through the heterostructure while utilizing the pattern of micro-domains as a hardmask.
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公开(公告)号：US20150060873A1
公开(公告)日：2015-03-05
申请号：US14016302
申请日：2013-09-03
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Han-Chin Chiu , Trinh Hai Dang , Hsing-Lien Lin , Cheng-Yuan Tsai , Chia-Shiung Tsai , Xiaomeng Chen
IPC: H01L29/778 , H01L29/66
CPC classification number: H01L29/778 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7785 , H01L29/7787
Abstract: Some embodiments of the present disclosure relates to a crystalline passivation layer for effectively passivating III-N surfaces. Surface passivation of HEMTs reduces or eliminates the surface effects that can otherwise degrade device performance. The crystalline passivation layer reduces the degrading effects of surface traps and provides a good interface between a III-nitride surface and an insulator (e.g., gate dielectric formed over the passivation layer).
Abstract translation: 本公开的一些实施方案涉及用于有效钝化III-N表面的晶体钝化层。 HEMT的表面钝化减少或消除了否则会降低器件性能的表面效应。 结晶钝化层降低了表面陷阱的降解效应，并且在III族氮化物表面和绝缘体之间提供良好的界面（例如，在钝化层上形成的栅极电介质）。
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