公开(公告)号：US20240087879A1

公开(公告)日：2024-03-14

申请号：US18509053

申请日：2023-11-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Xin-Hua Huang ,  Ping-Yin Liu ,  Hung-Hua Lin ,  Hsun-Chung Kuang ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L21/02 ,  B23K1/00 ,  B23K1/20 ,  B23K20/02 ,  B23K20/233 ,  B23K20/24 ,  H01L23/00

CPC classification number: H01L21/02068 ,  B23K1/0016 ,  B23K1/206 ,  B23K20/026 ,  B23K20/233 ,  B23K20/24 ,  H01L24/89 ,  B23K2101/40

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

公开(公告)号：US10809635B2

公开(公告)日：2020-10-20

申请号：US15939311

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Huei Chen ,  Hung-Yi Chung ,  Chao-Ting Hong ,  Cheng-Kuang Lee ,  Xiaomeng Chen ,  Teng-Cheng Hsu

IPC: G01N21/88 ,  G03F7/20 ,  G06T7/00 ,  G01N21/95 ,  G01N21/956 ,  H01J37/28

Abstract: A defect inspection method and a defect inspection system are provided. In the method, a plurality of candidate defect images are retrieved from inspection images obtained by at least one optical inspection tool performing hot scans on at least one wafer and a plurality of attributes are extracted from the inspection images. A random forest classifier including a plurality of decision trees for classifying the candidate defect images is created, wherein the decision trees are built with different subset of the attributes and the candidate defect images. A plurality of candidate defect images are retrieved from the optical inspection tool in runtime and applied to the decision trees, and classified into nuisance images and real defect images according to votes of the decision trees in which the nuisance images are filtered out. The real defect images with the votes over a confidence value are sampled for microscopic review.

公开(公告)号：US20150287737A1

公开(公告)日：2015-10-08

申请号：US14745568

申请日：2015-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Tsung-Yu Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L27/115 ,  H01L29/51 ,  H01L29/423 ,  H01L29/792 ,  H01L29/06

CPC classification number: H01L27/11568 ,  H01L21/02118 ,  H01L21/28273 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32055 ,  H01L21/32139 ,  H01L21/8239 ,  H01L27/11521 ,  H01L27/11565 ,  H01L29/0665 ,  H01L29/0692 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/51 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/792 ,  Y10S977/774

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract translation: 本公开的一些实施例涉及实现存储器单元内的离散存储元件的基本上均匀的图案的方法。 将具有第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并在具有第二聚合物物质的聚合物基质的具有规则形式的第二聚合物物质的相分离材料中进行自组装， 第一种聚合物种类。 然后除去聚合物基质中的第二种聚合物物质，形成孔。 然后通过孔进行蚀刻，利用聚合物基质作为硬掩模，以在设置在衬底表面上的种子层上的电介质层中形成基本上相同的孔的图案。 然后将种子层上的外延沉积物用于在介电层内生长基本上均匀的离散存储元件图案。

公开(公告)号：US09064821B2

公开(公告)日：2015-06-23

申请号：US13974137

申请日：2013-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Tsung-Yu Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L21/32 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8239 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/02

CPC classification number: H01L27/11568 ,  H01L21/02118 ,  H01L21/28273 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32055 ,  H01L21/32139 ,  H01L21/8239 ,  H01L27/11521 ,  H01L27/11565 ,  H01L29/0665 ,  H01L29/0692 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/51 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/792 ,  Y10S977/774

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract translation: 本公开的一些实施例涉及实现存储器单元内的离散存储元件的基本上均匀的图案的方法。 将包含第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并进行自组装成相分离的材料，该相分离材料包含第二聚合物物质的规则形式的第二聚合物种类的聚合物基质， 第一种聚合物种类。 然后除去聚合物基质中的第二种聚合物物质，形成孔。 然后通过孔进行蚀刻，利用聚合物基质作为硬掩模，以在设置在衬底表面上的种子层上的电介质层中形成基本上相同的孔的图案。 然后将种子层上的外延沉积物用于在介电层内生长基本上均匀的离散存储元件图案。

公开(公告)号：US20150054059A1

公开(公告)日：2015-02-26

申请号：US13974155

申请日：2013-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L29/792 ,  H01L29/66

CPC classification number: H01L21/28273 ,  H01L21/31155 ,  H01L21/32105 ,  H01L21/32139 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements comprising a substantially equal size within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first or second polymer species is then removed resulting with a pattern of micro-domains or the polymer matrix with a pattern of holes, which may be utilized as a hard-mask to form a substantially identical pattern of discrete storage elements through an etch, ion implant technique, or a combination thereof.

Abstract translation: 本公开的一些实施例涉及一种实现在存储器单元内包括基本上相等尺寸的离散存储元件的基本上均匀的图案的方法。 将包含第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并进行自组装成相分离的材料，该相分离材料包含第二聚合物物质的规则形式的第二聚合物种类的聚合物基质， 第一种聚合物种类。 然后去除第一或第二聚合物物质，其具有微畴图案或具有空穴图案的聚合物基质，其可以用作硬掩模，以通过蚀刻形成基本相同的离散存储元件图案， 离子注入技术或其组合。

公开(公告)号：US20220310449A1

公开(公告)日：2022-09-29

申请号：US17842392

申请日：2022-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsun-Chung Kuang ,  Yen-Chang Chu ,  Cheng-Tai Hsiao ,  Ping-Yin Liu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L21/768 ,  H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L25/075 ,  H01L25/04 ,  H01L23/29 ,  H01L25/065

Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

公开(公告)号：US20210013098A1

公开(公告)日：2021-01-14

申请号：US17034526

申请日：2020-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsun-Chung Kuang ,  Yen-Chang Chu ,  Cheng-Tai Hsiao ,  Ping-Yin Liu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L25/04 ,  H01L25/075 ,  H01L23/538 ,  H01L25/065 ,  H01L23/29 ,  H01L25/00

Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

公开(公告)号：US20200028070A1

公开(公告)日：2020-01-23

申请号：US16587499

申请日：2019-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Chern-Yow Hsu ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of magnetic random access memory (MRAM) cells with a minimum dimension below the lower resolution limit of some optical lithography techniques. A copolymer solution comprising first and second polymer species is spin-coated over a heterostructure which resides over a surface of a substrate. The heterostructure comprises first and second ferromagnetic layers which are separated by an insulating layer. The copolymer solution is subjected to self-assembly into a phase-separated material comprising a pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first polymer species is then removed, leaving a pattern of micro-domains of the second polymer species. A pattern of magnetic memory cells within the heterostructure is formed by etching through the heterostructure while utilizing the pattern of micro-domains as a hardmask.

公开(公告)号：US20190318471A1

公开(公告)日：2019-10-17

申请号：US16116899

申请日：2018-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Huei Chen ,  Pei-Chao Su ,  Xiaomeng Chen ,  Chan-Ming Chang ,  Shih-Yung Chen ,  Hung-Yi Chung ,  Kuang-Shing Chen ,  Li-Jou Lee ,  Yung-Cheng Lin ,  Wei-Chen Wu ,  Shih-Chang Wang ,  Chien-An Lin

IPC: G06T7/00

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

公开(公告)号：US09385136B2

公开(公告)日：2016-07-05

申请号：US14745568

申请日：2015-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Tsung-Yu Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L29/788 ,  H01L27/115 ,  H01L21/32 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8239 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/02 ,  H01L29/423 ,  H01L21/308 ,  H01L21/311 ,  H01L29/06 ,  H01L29/51 ,  H01L29/792

CPC classification number: H01L27/11568 ,  H01L21/02118 ,  H01L21/28273 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32055 ,  H01L21/32139 ,  H01L21/8239 ,  H01L27/11521 ,  H01L27/11565 ,  H01L29/0665 ,  H01L29/0692 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/51 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/792 ,  Y10S977/774

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract translation: 本公开的一些实施例涉及实现存储器单元内的离散存储元件的基本上均匀的图案的方法。 将具有第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并在具有第二聚合物物质的聚合物基质的具有规则形式的第二聚合物物质的相分离材料中进行自组装， 第一种聚合物种类。 然后除去聚合物基质中的第二种聚合物物质，形成孔。 然后通过孔进行蚀刻，利用聚合物基质作为硬掩模，以在设置在衬底表面上的种子层上的电介质层中形成基本上相同的孔的图案。 然后将种子层上的外延沉积物用于在介电层内生长基本上均匀的离散存储元件图案。