公开(公告)号：US08816358B1

公开(公告)日：2014-08-26

申请号：US13934296

申请日：2013-07-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Ju Tsai ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Cheng-Yuan Tsai ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L27/15 ,  H01L31/12 ,  H01L33/00 ,  H01L51/42 ,  H01L51/44 ,  H01L31/0232

CPC classification number: H01L51/44 ,  H01L27/307 ,  H01L51/0037 ,  H01L51/4213

Abstract: Some embodiments of the present disclosure relate to an optical sensor. The optical sensor includes a first electrode disposed over a semiconductor substrate. A photoelectrical conversion element, which includes a p-type layer and an n-type layer, is arranged over the first electrode to convert one or more photons having wavelength falling within a predetermined wavelength range into an electrical signal. A second electrode is disposed over the photoelectrical conversion element. The second electrode is transparent in the predetermined wavelength range. A color filter element, which is made up of plasmonic nanostructures, is disposed over the second electrode.

Abstract translation: 本公开的一些实施例涉及光学传感器。 光学传感器包括设置在半导体衬底上的第一电极。 包括p型层和n型层的光电转换元件布置在第一电极上方，以将具有落入预定波长范围内的波长的一个或多个光子转换成电信号。 第二电极设置在光电转换元件上。 第二电极在预定波长范围内是透明的。 由等离子体激元纳米结构构成的滤色器元件设置在第二电极上。