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公开(公告)号：US11164768B2
公开(公告)日：2021-11-02
申请号：US16019341
申请日：2018-06-26
Applicant: KLA-Tencor Corporation
Inventor： Pradeep Vukkadala , Mark D. Smith , Ady Levy , Prasanna Dighe , Dieter Mueller
Abstract: A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.
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公开(公告)号：US10475712B2
公开(公告)日：2019-11-12
申请号：US15707927
申请日：2017-09-18
Applicant: KLA-Tencor Corporation
Inventor： Ady Levy , Mark D. Smith
Abstract: A system is disclosed. The system includes a tool cluster. The tool cluster includes a first deposition tool configured to deposit a first layer on a wafer. The tool cluster additionally includes an interferometer tool configured to obtain one or more measurements of the wafer. The tool cluster additionally includes a second deposition tool configured to deposit a second layer on the wafer. The tool cluster additionally includes a vacuum assembly. One or more correctables configured to adjust at least one of the first deposition tool or the second deposition tool are determined based on the one or more measurements. The one or more measurements are obtained between the deposition of the first layer and the deposition of the second layer without breaking the vacuum generated by the vacuum assembly.
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公开(公告)号：US10216096B2
公开(公告)日：2019-02-26
申请号：US15174111
申请日：2016-06-06
Applicant: KLA-Tencor Corporation
Inventor： Myungjun Lee , Mark D. Smith , Sanjay Kapasi , Stilian Pandev , Dzmitry Sanko , Pradeep Subrahmanyan , Ady Levy
Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.
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公开(公告)号：US20180253016A1
公开(公告)日：2018-09-06
申请号：US15843371
申请日：2017-12-15
Applicant: KLA-Tencor Corporation
Inventor： Onur Nihat Demirer , William Pierson , Mark D. Smith , Jeremy S. Nabeth , Miguel Garcia-Medina , Lipkong Yap
IPC: G03F7/20 , H01L21/027
CPC classification number: G03F7/70633 , G03F7/70258 , G03F7/705 , G03F9/7046 , H01L21/0274
Abstract: A process control system includes a controller configured to generate a reference overlay signature based on one or more overlay reference layers of a sample, extrapolate the reference overlay signature to a set of correctable fields for the exposure of a current layer of the sample to generate a full-field reference overlay signature, identify one or more alignment fields of the set of correctable fields, generate an alignment-correctable signature by modeling alignment corrections for the set of correctable fields, subtract the alignment-correctable signature from the full-field reference overlay signature to generate feedforward overlay corrections for the current layer when the one or more overlay reference layers are the same as the one or more alignment reference layers, generate lithography tool corrections based on the feedforward overlay corrections, and provide the lithography tool corrections for the current layer to the lithography tool.
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Patent Agency Ranking
公开(公告)号：US10024654B2
公开(公告)日：2018-07-17
申请号：US15091021
申请日：2016-04-05
Applicant: KLA-Tencor Corporation
Inventor： Mark D. Smith , Jose Solomon , Stuart Sherwin , Walter Mieher , Ady Levy
Abstract: The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.
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公开(公告)号：US20180017873A1
公开(公告)日：2018-01-18
申请号：US15232302
申请日：2016-08-09
Applicant: KLA-Tencor Corporation
Inventor： John J. Biafore , Mark D. Smith , John S. Graves , David A. Blankenship , Alessandro Vaglio Pret
IPC: G03F7/38
CPC classification number: G03F7/705 , G03F7/30 , G03F7/322 , G03F7/325 , G03F7/38 , G03F7/70125 , G03F7/70441 , G03F7/70625
Abstract: In some embodiments, a method may include improving a development process of a photoresist. The method may include simulating a negative-tone development process of a photoresist. The method may include determining a reaction of a developer with a soluble photoresist surface. Determining the reaction of the developer may include applying a reaction rate constant at a power of a reaction order to a blocked polymer concentration to yield a resist dissolution rate of soluble resist comprising the dissolution-limited regime of development. The method may include determining a flux of the developer into exposed and partially soluble resist. Determining the flux of the developer may include applying a vector valued diffusion coefficient of the developer dependent upon the blocked polymer concentration to a gradient of developer concentration to an expansion rate of insoluble resist comprising the expansion-controlled regime of development. The method may include optimizing an illumination source and a mask on a full chip.
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公开(公告)号：US20170045826A1
公开(公告)日：2017-02-16
申请号：US15174111
申请日：2016-06-06
Applicant: KLA-Tencor Corporation
Inventor： Myungjun Lee , Mark D. Smith , Sanjay Kapasi , Stilian Pandev , Dimitry Sanko , Pradeep Subrahmanyan , Ady Levy
IPC: G03F7/20
CPC classification number: G03F7/70558 , G03F7/70091 , G03F7/70641
Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.
Abstract translation: 光刻系统包括照明源和一组投影光学元件。 照明源将来自离轴照明杆的照明光束引导到图案掩模。 图案掩模包括一组图案元件，以生成包括来自照明杆的照明的衍射光束集合。 由该组投影光学器件接收的衍射光束组中的至少两个衍射光束不对称地分布在该组投影光学器件的光瞳平面中。 衍射光束组中的至少两个衍射光束不对称地入射到样品上，以形成一组对应于该组图案元素的图像的制造元件。 样品上的一组制造元件包括样品沿该组投影光学器件的光轴的位置的一个或多个指示器。
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28.发明申请公开(公告)号：US20160290789A1
公开(公告)日：2016-10-06
申请号：US15091021
申请日：2016-04-05
Applicant: KLA-Tencor Corporation
Inventor： Mark D. Smith , Jose Solomon , Stuart Sherwin , Walter Mieher , Ady Levy
IPC: G01B11/16
CPC classification number: G01B11/161 , G01B9/02021 , G01B9/02027 , G01B11/2441 , G01B2210/56 , H01L22/12
Abstract: The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.
Abstract translation: 衬底的平面内失真的确定包括测量处于非夹角状态的衬底的一个或多个面外失真，基于所测量的外延位置来确定衬底上的薄膜在无夹持状态下的有效薄膜应力， 基于在无夹持状态下的基板的平面失真，基于在无夹持状态下的基板上的膜的有效膜应力来确定基板在夹持状态下的面内失真，并且调整处理工具或 基于测量的平面外失真或确定的平面内失真中的至少一个的覆盖工具。
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公开(公告)号：US20160253450A1
公开(公告)日：2016-09-01
申请号：US15082152
申请日：2016-03-28
Applicant: KLA-Tencor Corporation
Inventor： Daniel Kandel , Mark D. Smith , Mark Wagner , Eran Amit , Myungjun Lee
IPC: G06F17/50 , G01N21/93 , G01N21/956
Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.
Abstract translation: 提供了测量方法，其包括在设备设计中识别重叠关键模式，所述重叠关键模式对于取决于设计规范的指定阈值以上的过程变化具有重叠灵敏度; 并使用与所识别的重叠关键模式相对应的度量目标。 替代地或补充地，计量方法包括根据由于指定的过程变化而变窄的对应过程窗口来识别产出关键模式，其中缩小由模式的边缘放置误差（EPE）对过程参数的依赖性来定义。 提供相应的目标和测量。
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