Photoresist Simulation
    1.
    发明申请
    Photoresist Simulation 审中-公开
    光刻胶仿真

    公开(公告)号:US20140067346A1

    公开(公告)日:2014-03-06

    申请号:US14011989

    申请日:2013-08-28

    CPC classification number: G06F19/702 G03F7/0045

    Abstract: A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile.

    Abstract translation: 一种基于处理器的方法,用于通过确定光致抗蚀剂体积内的数量的酸产生剂和猝灭剂来测量光致抗蚀剂轮廓的尺寸性质,确定由光致抗蚀剂体积吸收的光子数量,确定转化为酸的酸数发生器的数量, 在光致抗蚀剂体积内的酸和猝灭反应,计算光致抗蚀剂体积的发展,用处理器产生通过光刻胶体积的发展产生的光致抗蚀剂轮廓的三维模拟扫描电子显微镜图像,并且测量光致抗蚀剂体积的尺寸特性 光致抗蚀剂轮廓。

    Stochastically-Aware Metrology and Fabrication

    公开(公告)号:US20180275523A1

    公开(公告)日:2018-09-27

    申请号:US15612279

    申请日:2017-06-02

    Abstract: A system for stochastically-aware metrology includes a controller to be communicatively coupled to a fabrication tool. The controller receives a production recipe including at least a pattern of elements to be fabricated on a sample and one or more exposure parameters for exposing the pattern of elements, identifies candidate care areas of the pattern of elements susceptible to stochastic repeaters including fabrication defects predicted to occur stochastically when fabricated according to the production recipe, selects one or more care areas from the candidate care areas by comparing one or more predicted likelihoods of the one or more stochastic repeaters to a defect likelihood threshold, modifies the production recipe to mitigate the stochastic repeaters within the one or more care areas within a selected tolerance, and directs the fabrication tool to fabricate at least one sample according to the modified production recipe.

    METHOD FOR COMPUTER MODELING AND SIMULATION OF NEGATIVE-TONE-DEVELOPABLE PHOTORESISTS

    公开(公告)号:US20180017873A1

    公开(公告)日:2018-01-18

    申请号:US15232302

    申请日:2016-08-09

    Abstract: In some embodiments, a method may include improving a development process of a photoresist. The method may include simulating a negative-tone development process of a photoresist. The method may include determining a reaction of a developer with a soluble photoresist surface. Determining the reaction of the developer may include applying a reaction rate constant at a power of a reaction order to a blocked polymer concentration to yield a resist dissolution rate of soluble resist comprising the dissolution-limited regime of development. The method may include determining a flux of the developer into exposed and partially soluble resist. Determining the flux of the developer may include applying a vector valued diffusion coefficient of the developer dependent upon the blocked polymer concentration to a gradient of developer concentration to an expansion rate of insoluble resist comprising the expansion-controlled regime of development. The method may include optimizing an illumination source and a mask on a full chip.

    Stochastically-aware metrology and fabrication

    公开(公告)号:US10474042B2

    公开(公告)日:2019-11-12

    申请号:US15612279

    申请日:2017-06-02

    Abstract: A system for stochastically-aware metrology includes a controller to be communicatively coupled to a fabrication tool. The controller receives a production recipe including at least a pattern of elements to be fabricated on a sample and one or more exposure parameters for exposing the pattern of elements, identifies candidate care areas of the pattern of elements susceptible to stochastic repeaters including fabrication defects predicted to occur stochastically when fabricated according to the production recipe, selects one or more care areas from the candidate care areas by comparing one or more predicted likelihoods of the one or more stochastic repeaters to a defect likelihood threshold, modifies the production recipe to mitigate the stochastic repeaters within the one or more care areas within a selected tolerance, and directs the fabrication tool to fabricate at least one sample according to the modified production recipe.

    Photoresist simulation
    6.
    发明授权

    公开(公告)号:US09679116B2

    公开(公告)日:2017-06-13

    申请号:US14011989

    申请日:2013-08-28

    CPC classification number: G06F19/702 G03F7/0045

    Abstract: A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile.

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