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公开(公告)号：US10216096B2
公开(公告)日：2019-02-26
申请号：US15174111
申请日：2016-06-06
Applicant: KLA-Tencor Corporation
Inventor： Myungjun Lee , Mark D. Smith , Sanjay Kapasi , Stilian Pandev , Dzmitry Sanko , Pradeep Subrahmanyan , Ady Levy
Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.
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公开(公告)号：US20170045826A1
公开(公告)日：2017-02-16
申请号：US15174111
申请日：2016-06-06
Applicant: KLA-Tencor Corporation
Inventor： Myungjun Lee , Mark D. Smith , Sanjay Kapasi , Stilian Pandev , Dimitry Sanko , Pradeep Subrahmanyan , Ady Levy
IPC: G03F7/20
CPC classification number: G03F7/70558 , G03F7/70091 , G03F7/70641
Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.
Abstract translation: 光刻系统包括照明源和一组投影光学元件。 照明源将来自离轴照明杆的照明光束引导到图案掩模。 图案掩模包括一组图案元件，以生成包括来自照明杆的照明的衍射光束集合。 由该组投影光学器件接收的衍射光束组中的至少两个衍射光束不对称地分布在该组投影光学器件的光瞳平面中。 衍射光束组中的至少两个衍射光束不对称地入射到样品上，以形成一组对应于该组图案元素的图像的制造元件。 样品上的一组制造元件包括样品沿该组投影光学器件的光轴的位置的一个或多个指示器。
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公开(公告)号：US20160253450A1
公开(公告)日：2016-09-01
申请号：US15082152
申请日：2016-03-28
Applicant: KLA-Tencor Corporation
Inventor： Daniel Kandel , Mark D. Smith , Mark Wagner , Eran Amit , Myungjun Lee
IPC: G06F17/50 , G01N21/93 , G01N21/956
Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.
Abstract translation: 提供了测量方法，其包括在设备设计中识别重叠关键模式，所述重叠关键模式对于取决于设计规范的指定阈值以上的过程变化具有重叠灵敏度; 并使用与所识别的重叠关键模式相对应的度量目标。 替代地或补充地，计量方法包括根据由于指定的过程变化而变窄的对应过程窗口来识别产出关键模式，其中缩小由模式的边缘放置误差（EPE）对过程参数的依赖性来定义。 提供相应的目标和测量。
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公开(公告)号：US10685165B2
公开(公告)日：2020-06-16
申请号：US15082152
申请日：2016-03-28
Applicant: KLA-Tencor Corporation
Inventor： Daniel Kandel , Mark D. Smith , Mark Wagner , Eran Amit , Myungjun Lee
IPC: G01R31/14 , G06F30/398 , H01L21/66 , G01N21/93 , G01N21/956 , G06F119/18
Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.
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公开(公告)号：US20180157784A1
公开(公告)日：2018-06-07
申请号：US15502950
申请日：2016-11-04
Applicant: KLA-Tencor Corporation
Inventor： Vladimir Levinski , Eitan Hajaj , Tal Itzkovich , Sharon Aharon , Michael E. Adel , Yuri Paskover , Daria Negri , Yuval Lubashevsky , Amnon Manassen , Myungjun Lee , Mark D. Smith
Abstract: Metrology targets and target design methods are provided, in which target elements are defined by replacing elements from a periodic pattern having a pitch p, by assist elements having at least one geometric difference from the replaced elements, to form a composite periodic structure that maintains the pitch p as a single pitch. Constructing targets within the bounds of compatibility with advanced multiple patterning techniques improves the fidelity of the targets and fill factor modulation enables adjustment of the targets to produce sufficient metrology sensitivity for extracting the overlay while achieving process compatibility of the targets.
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Patent Agency Ranking
公开(公告)号：US20170023358A1
公开(公告)日：2017-01-26
申请号：US15287388
申请日：2016-10-06
Applicant: KLA-Tencor Corporation
Inventor： Myungjun Lee , Mark D. Smith , Michael E. Adel , Eran Amit , Daniel Kandel
CPC classification number: G01J9/00 , G03F7/705 , G03F7/70683 , H01L22/30
Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.
Abstract translation: 提供了测量方法，模块和目标，用于测量倾斜的设备设计。 该方法针对目标候选者和设备设计之间的图案布局错误（PPEs）的泽尔尼克敏感度的关系，分析和优化目标设计。 可以应用蒙特卡洛方法来增强所选择的目标候选者对透镜像差和/或装置设计中的变化的鲁棒性。 此外，还提供了考虑到明确地修改Zernike敏感度的目标参数，以提高计量测量质量并减少不准确度。
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公开(公告)号：US10579768B2
公开(公告)日：2020-03-03
申请号：US15502950
申请日：2016-11-04
Applicant: KLA-Tencor Corporation
Inventor： Vladimir Levinski , Eitan Hajaj , Tal Itzkovich , Sharon Aharon , Michael E. Adel , Yuri Paskover , Daria Negri , Yuval Lubashevsky , Amnon Manassen , Myungjun Lee , Mark D. Smith
IPC: G06F17/50 , H01L21/027 , G03F7/20
Abstract: Metrology targets and target design methods are provided, in which target elements are defined by replacing elements from a periodic pattern having a pitch p, by assist elements having at least one geometric difference from the replaced elements, to form a composite periodic structure that maintains the pitch p as a single pitch. Constructing targets within the bounds of compatibility with advanced multiple patterning techniques improves the fidelity of the targets and fill factor modulation enables adjustment of the targets to produce sufficient metrology sensitivity for extracting the overlay while achieving process compatibility of the targets.
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公开(公告)号：US20180196358A1
公开(公告)日：2018-07-12
申请号：US15413628
申请日：2017-01-24
Applicant: KLA-Tencor Corporation
Inventor： Myungjun Lee , Stewart Robertson , Mark D. Smith , Pradeep Subrahmanyan
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F1/44 , G03F7/70091
Abstract: A lithography system includes an illumination source, one or more projection optical elements, and a pattern mask. The illumination source includes one or more illumination poles. The pattern mask includes a set of focus-sensitive mask elements periodically distributed with a pitch, wherein the set of focus-sensitive mask elements is configured to diffract illumination from the one or more illumination poles. The pitch is selected such that two diffraction orders of illumination associated with each of the one or more illumination poles are asymmetrically distributed in a pupil plane of the one or more projection optical elements. Further, the one or more projection optical elements are configured to expose a sample with an image of the set of focus-sensitive pattern mask elements based on the two diffraction orders of illumination associated with each of the one or more illumination poles. Additionally, one or more printing characteristics of the image of the set of focus-sensitive pattern mask elements on the sample is indicative of a position of the sample within a focal volume of the one or more projection optical elements.
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公开(公告)号：US10209627B2
公开(公告)日：2019-02-19
申请号：US15413628
申请日：2017-01-24
Applicant: KLA-Tencor Corporation
Inventor： Myungjun Lee , Stewart Robertson , Mark D. Smith , Pradeep Subrahmanyan
Abstract: A lithography system includes an illumination source, projection optical elements, and a pattern mask. The illumination source includes one or more illumination poles. The pattern mask includes a set of focus-sensitive mask elements distributed with a pitch and, is configured to diffract illumination from the one or more illumination poles. The pitch may be selected such that two diffraction orders of illumination associated with each of the one or more illumination poles are asymmetrically distributed in a pupil plane of the projection optical elements. Further, the projection optical elements may expose a sample with an image of the set of focus-sensitive pattern mask elements based on the two diffraction orders of illumination associated with each of the one or more illumination poles such that one or more printing characteristics is indicative of a position of the sample within a focal volume of the projection optical elements.
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公开(公告)号：US10095122B1
公开(公告)日：2018-10-09
申请号：US15289590
申请日：2016-10-10
Applicant: KLA-Tencor Corporation
Inventor： Myungjun Lee , Mark D. Smith
Abstract: A lithography system includes an illumination source, a pattern mask, and an optical element configured to expose a sample with an image of the pattern mask for the fabrication of one or more printed device structures and one or more metrology target structures. The pattern mask includes a device pattern mask area and a metrology target pattern mask area. The device pattern mask area includes a set of device pattern elements distributed with a device pitch. The metrology target pattern mask area includes a set of metrology target pattern elements. The one or more printed metrology target structures include a set of metrology target elements distributed with a metrology target pitch. Regions of the metrology target pattern mask area include sub-resolution features having widths smaller than the resolution of the optical element such that the sub-resolution pattern elements are not included on the one or more printed metrology target structures.
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