公开(公告)号：US10345095B1

公开(公告)日：2019-07-09

申请号：US14947510

申请日：2015-11-20

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Leonid Poslavsky ,  Dzmitry Sanko ,  Andrei V. Shchegrov

IPC: G01B11/06 ,  G01B11/02 ,  G01B21/08 ,  H01L21/66 ,  G01N21/95 ,  G01N21/88 ,  G01N21/64

Abstract: Methods and systems for solving measurement models of complex device structures with reduced computational effort are presented. In some embodiments, a measurement signal transformation model is employed to compute transformed measurement signals from coarse measurement signals. The transformed measurement signals more closely approximate a set of measured signals than the coarse measurement signals. However, the coarse set of measured signals are computed with less computational effort than would be required to directly compute measurement signals that closely approximate the set of measured signals. In other embodiments, a measurement signal transformation model is employed to compute transformed measurement signals from actual measured signals. The transformed measurement signals more closely approximate the coarse measurement signals than the actual measured signals. Transformed measurement signals are subsequently used for regression, library generation, or other analyses typically employed as part of an effort to characterize structural, material, and process parameters in semiconductor manufacturing.

公开(公告)号：US10215559B2

公开(公告)日：2019-02-26

申请号：US14879534

申请日：2015-10-09

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko ,  Alexander Kuznetsov

IPC: G01B11/00 ,  G01B11/27 ,  G01B11/14 ,  G01B11/24

Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a primary, multiple patterned target is measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target and an assist target are measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target is measured at different process steps and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model.

公开(公告)号：US10210606B2

公开(公告)日：2019-02-19

申请号：US14880077

申请日：2015-10-09

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko ,  Wei Lu ,  Siddharth Srivastava

IPC: G06T7/00 ,  G01N21/956 ,  G03F7/20 ,  G06T7/33 ,  H04N5/225

Abstract: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.

公开(公告)号：US20170045356A1

公开(公告)日：2017-02-16

申请号：US15236334

申请日：2016-08-12

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko

IPC: G01B21/00

CPC classification number: G01B21/042 ,  G01B2210/56

Abstract: A system, method and computer program product are provided for calibrating metrology tools. One or more design-of-experiments wafers is received for calibrating a metrology tool. A set of signals is collected by measuring the one or more wafers utilizing the metrology tool. A first transformation is determined to convert the set of signals to components, and a second transformation is determined to convert a set of reference signals to reference components. The set of reference signals is collected by measuring the one or more wafers utilizing a well-calibrated reference tool. A model is trained based on the reference components that maps the components to converted components, and the model, first transformation, and second transformation are stored in a memory associated with the metrology tool.

Abstract translation: 提供了一种用于校准计量工具的系统，方法和计算机程序产品。 接收一个或多个实验设计的晶片来校准测量工具。 通过使用计量工具测量一个或多个晶片来收集一组信号。 确定第一变换以将该组信号转换成分量，并且确定第二变换以将一组参考信号转换为参考分量。 通过使用精确校准的参考工具测量一个或多个晶片来收集参考信号组。 基于将组件映射到转换的组件的参考组件来训练模型，并且模型，第一变换和第二变换被存储在与计量工具相关联的存储器中。

公开(公告)号：US20180108578A1

公开(公告)日：2018-04-19

申请号：US15782542

申请日：2017-10-12

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko ,  Andrei V. Shchegrov

IPC: H01L21/66 ,  G01N21/95 ,  G01B11/06 ,  G01N21/25 ,  G03F7/20

CPC classification number: H01L22/12 ,  G01B11/0625 ,  G01B11/24 ,  G01B2210/56 ,  G01N21/255 ,  G01N21/9503 ,  G01N2021/213 ,  G03F7/705 ,  G03F7/70625 ,  H01L22/26

Abstract: Methods and systems for estimating values of parameters of interest based on repeated measurements of a wafer during a process interval are presented herein. In one aspect, one or more optical metrology subsystems are integrated with a process tool, such as an etch tool or a deposition tool. Values of one or more parameters of interest measured while the wafer is being processed are used to control the process itself. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of a semiconductor fabrication process flow. In one aspect, values of one or more parameters of interest are estimated based on spectral measurements of wafers under process using a trained signal response metrology (SRM) measurement model. In another aspect, a trained signal decontamination model is employed to generate decontaminated optical spectra from measured optical spectra while the wafer is being processed.

公开(公告)号：US10295342B2

公开(公告)日：2019-05-21

申请号：US15236334

申请日：2016-08-12

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko

IPC: G01B21/04

Abstract: A system, method and computer program product are provided for calibrating metrology tools. One or more design-of-experiments wafers is received for calibrating a metrology tool. A set of signals is collected by measuring the one or more wafers utilizing the metrology tool. A first transformation is determined to convert the set of signals to components, and a second transformation is determined to convert a set of reference signals to reference components. The set of reference signals is collected by measuring the one or more wafers utilizing a well-calibrated reference tool. A model is trained based on the reference components that maps the components to converted components, and the model, first transformation, and second transformation are stored in a memory associated with the metrology tool.

公开(公告)号：US20160109230A1

公开(公告)日：2016-04-21

申请号：US14879534

申请日：2015-10-09

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko ,  Alexander Kuznetsov

IPC: G01B11/27 ,  G01B11/14

CPC classification number: G01B11/272 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56

Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a primary, multiple patterned target is measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target and an assist target are measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target is measured at different process steps and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model.

Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量主要的多个图案化靶，并且通过信号响应计量（SRM）测量模型从测量数据直接确定感兴趣的参数的值。 在一些其他示例中，测量主要，多重图案化目标和辅助目标，并且通过信号响应计量（SRM）测量模型从所测量的数据直接确定感兴趣参数的值。 在一些其他示例中，在不同的工艺步骤测量主要的多重图案化靶，并且通过信号响应计量（SRM）测量模型从所测量的数据直接确定感兴趣的参数的值。

公开(公告)号：US10216096B2

公开(公告)日：2019-02-26

申请号：US15174111

申请日：2016-06-06

Applicant: KLA-Tencor Corporation

Inventor： Myungjun Lee ,  Mark D. Smith ,  Sanjay Kapasi ,  Stilian Pandev ,  Dzmitry Sanko ,  Pradeep Subrahmanyan ,  Ady Levy

IPC: G03B27/54 ,  G03F7/20

Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.

公开(公告)号：US20160117847A1

公开(公告)日：2016-04-28

申请号：US14880077

申请日：2015-10-09

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko ,  Wei Lu ,  Siddharth Srivastava

IPC: G06T7/60 ,  G06K9/46 ,  G06K9/62 ,  H04N5/225 ,  G06T7/00 ,  G06K9/52

CPC classification number: G06T7/001 ,  G01N21/956 ,  G03F7/70633 ,  G06T7/33 ,  G06T2207/10056 ,  G06T2207/20081 ,  G06T2207/30148 ,  H04N5/2256

Abstract: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.

Abstract translation: 本文介绍了通过连续光刻过程测量在基底上形成的结构之间的重叠误差的方法和系统。 采用两个覆盖目标，每个具有相反方向的编程偏移量来执行覆盖测量。 覆盖误差是基于零阶散射测量信号测量的，并且从两个不同方位角的每个目标采集散射测量数据。 另外，提出了基于测量的基于图像的训练数据创建基于图像的测量模型的方法和系统。 然后使用经过训练的基于图像的测量模型来从其他晶片收集的测量图像数据直接计算一个或多个感兴趣的参数的值。 本文描述的基于图像的测量的方法和系统适用于计量和检验应用。