公开(公告)号：US20160327605A1

公开(公告)日：2016-11-10

申请号：US15148116

申请日：2016-05-06

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Sanjay Kapasi ,  Mark D. Smith ,  Ady Levy

IPC: G01R31/26 ,  G01B11/00

CPC classification number: G01B11/00 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.

Abstract translation: 本文提供了用于监测表征在半导体晶片上的不同位置处制造的一组热点结构的参数的方法和系统。 热点结构是对工艺变化表现出敏感性并且对必须执行的允许的工艺变化产生限制以防止器件故障和低产量的器件结构。 采用经过训练的热点测量模型来接收由一个或多个测量系统在一个或多个测量目标产生的测量数据，并直接确定一个或多个热点参数的值。 对热点测量模型进行训练，以建立所考虑的热点结构的一个或多个特征与相同测量结果相关联的测量数据与相同晶片上的至少一个测量目标的测量数据之间的功能关系。 基于测量的热点参数的值来调整制造工艺参数。

公开(公告)号：US10030965B2

公开(公告)日：2018-07-24

申请号：US15148116

申请日：2016-05-06

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Sanjay Kapasi ,  Mark D. Smith ,  Ady Levy

IPC: G01B11/00 ,  H01L21/66

Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.

公开(公告)号：US10216096B2

公开(公告)日：2019-02-26

申请号：US15174111

申请日：2016-06-06

Applicant: KLA-Tencor Corporation

Inventor： Myungjun Lee ,  Mark D. Smith ,  Sanjay Kapasi ,  Stilian Pandev ,  Dzmitry Sanko ,  Pradeep Subrahmanyan ,  Ady Levy

IPC: G03B27/54 ,  G03F7/20

Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.

公开(公告)号：US20170045826A1

公开(公告)日：2017-02-16

申请号：US15174111

申请日：2016-06-06

Applicant: KLA-Tencor Corporation

Inventor： Myungjun Lee ,  Mark D. Smith ,  Sanjay Kapasi ,  Stilian Pandev ,  Dimitry Sanko ,  Pradeep Subrahmanyan ,  Ady Levy

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/70091 ,  G03F7/70641

Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.

Abstract translation: 光刻系统包括照明源和一组投影光学元件。 照明源将来自离轴照明杆的照明光束引导到图案掩模。 图案掩模包括一组图案元件，以生成包括来自照明杆的照明的衍射光束集合。 由该组投影光学器件接收的衍射光束组中的至少两个衍射光束不对称地分布在该组投影光学器件的光瞳平面中。 衍射光束组中的至少两个衍射光束不对称地入射到样品上，以形成一组对应于该组图案元素的图像的制造元件。 样品上的一组制造元件包括样品沿该组投影光学器件的光轴的位置的一个或多个指示器。