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    Near field metrology
    1.
    发明授权
    Near field metrology 有权

    公开(公告)号：US10261014B2

    公开(公告)日：2019-04-16

    申请号：US14583447

    申请日：2014-12-26

    Applicant: KLA-Tencor Corporation

    Inventor： Noam Sapiens ,  Joel Seligson ,  Vladimir Levinski ,  Daniel Kandel ,  Yoel Feler ,  Barak Bringoltz ,  Amnon Manassen ,  Eliav Benisty

    IPC: G01N21/55 ,  G01N21/47 ,  G02B27/56 ,  G02B27/58

    Abstract: Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed: the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.

    DEVICE METROLOGY TARGETS AND METHODS
    2.
    发明申请
    DEVICE METROLOGY TARGETS AND METHODS 审中-公开

    公开(公告)号：US20190004438A1

    公开(公告)日：2019-01-03

    申请号：US16102424

    申请日：2018-08-13

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

    IPC: G03F7/20 ,  H01L21/66

    Abstract: An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically. The system may further adjust the overlay measurements with the overlay sensitivity calibration parameters.

    DEVICE METROLOGY TARGETS AND METHODS
    4.
    发明申请
    DEVICE METROLOGY TARGETS AND METHODS 审中-公开
    设备计量目标和方法

    公开(公告)号：US20160266505A1

    公开(公告)日：2016-09-15

    申请号：US15159009

    申请日：2016-05-19

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

    IPC: G03F9/00

    CPC classification number: G03F7/70633 ,  H01L22/12 ,  H01L27/0207 ,  H01L27/092

    Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

    Abstract translation: 提供了计量方法和目标，将计量过程超越现有技术扩展到多层目标，准周期目标和设备样目标，而不必沿着设备设计的关键方向引入偏移量。 公开了用于导出诸如来自多层目标的覆盖层的度量数据的几个模型，并且提供了相应的目标配置以实现这种测量。 显示基于设备模式的准周期性目标，以改善目标和设备设计之间的相似性，并且使用基于设备模式的模式来填充目标和目标元素的环境，从而提高了流程兼容性。 偏移仅在非关键方向引入，和/或灵敏度被校准，以便与多层测量和准周期性目标测量的解决方案一起使用直接设备光学测量测量。

    Apodization for Pupil Imaging Scatterometry
    5.
    发明申请
    Apodization for Pupil Imaging Scatterometry 有权
    瞳孔影像散斑测量法

    公开(公告)号：US20150316783A1

    公开(公告)日：2015-11-05

    申请号：US14799132

    申请日：2015-07-14

    Applicant: KLA-Tencor Corporation

    Inventor： Andrew V. Hill ,  Amnon Manassen ,  Barak Bringoltz ,  Ohad Bachar ,  Mark Ghinovker ,  Zeev Bomzon ,  Daniel Kandel

    IPC: G02B27/58 ,  G01B11/00 ,  G01N21/47

    CPC classification number: G02B27/58 ,  G01B11/00 ,  G01N21/47 ,  G01N21/55 ,  G01N2201/06113 ,  G01N2201/068 ,  G03F7/70625 ,  G03F7/70633

    Abstract: The disclosure is directed to various apodization schemes for pupil imaging scatterometry. In some embodiments, the system includes an apodizer disposed within a pupil plane of the illumination path. In some embodiments, the system further includes an illumination scanner configured to scan a surface of the sample with at least a portion of apodized illumination. In some embodiments, the system includes an apodized pupil configured to provide a quadrupole illumination function. In some embodiments, the system further includes an apodized collection field stop. The various embodiments described herein may be combined to achieve certain advantages.

    Abstract translation: 本公开涉及用于瞳孔成像散射测量的各种变迹方案。 在一些实施例中，该系统包括设置在照明路径的光瞳平面内的变迹器。 在一些实施例中，系统还包括照明扫描器，其构造成用至少一部分变迹照明来扫描样品的表面。 在一些实施例中，系统包括配置成提供四极照明功能的变迹瞳孔。 在一些实施例中，系统还包括变迹集合区域停止。 可以组合这里描述的各种实施例以实现某些优点。

    NEAR FIELD METROLOGY
    6.
    发明申请
    NEAR FIELD METROLOGY 审中-公开
    近场计量学

    公开(公告)号：US20150198524A1

    公开(公告)日：2015-07-16

    申请号：US14583447

    申请日：2014-12-26

    Applicant: KLA-Tencor Corporation

    Inventor： Noam Sapiens ,  Joel Seligson ,  Vladimir Levinski ,  Daniel Kandel ,  Yoel Feler ,  Barak Bringoltz ,  Amnon Manassen ,  Eliav Benisty

    IPC: G01N21/47

    CPC classification number: G01N21/4788 ,  G01N2201/06113 ,  G02B27/56 ,  G02B27/58

    Abstract: Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed: the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.

    Abstract translation: 本文提供的计量系统和方法包括位于系统的物镜和目标之间的光学元件。 光学元件布置成增强目标反射的辐射消散模式。 公开了各种配置：光学元件可以包括固体浸没透镜，莫尔元件和固体浸没光学元件的组合，不同设计的介电金属 - 电介质叠层以及用于放大照明辐射的渐逝模式的谐振元件。 计量系统和方法可配置为各种计量类型，包括成像和散射方法。

    Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
    8.
    发明授权
    Multi-layer overlay metrology target and complimentary overlay metrology measurement systems 有权

    公开(公告)号：US10527954B2

    公开(公告)日：2020-01-07

    申请号：US15925325

    申请日：2018-03-19

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

    IPC: G03F7/20

    Abstract: A system for measuring overlay from a multi-layer overlay target for use in imaging based metrology is disclosed. The system is configured for measuring overlay from a multi-layer overly target that includes three or more target structures, wherein a first target structure is disposed in a first process layer, a second target structure is disposed in a second process layer, and at least a third target structure is disposed in at least a third process layer. The system includes an illumination source configured to illuminate the target structures of the multi-layer overlay target, a detector configured to collect light reflected from the target structures, and one or more processors configured to execute a set of program instructions to determine overlay error between two or more structures based on the collected light from the plurality of targets.

    Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology
    9.
    发明授权
    Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology 有权

    公开(公告)号：US10126238B2

    公开(公告)日：2018-11-13

    申请号：US15841219

    申请日：2017-12-13

    Applicant: KLA-Tencor Corporation

    Inventor： Amnon Manassen ,  Andrew Hill ,  Daniel Kandel ,  Ilan Sela ,  Ohad Bachar ,  Barak Bringoltz

    IPC: G01N21/55 ,  G01B11/00 ,  G01N21/956 ,  G01N21/95

    Abstract: Angle-resolved reflectometers and reflectometry methods are provided, which comprise a coherent light source, an optical system arranged to scan a test pattern using a spot of coherent light from the light source to yield realizations of the light distribution in the collected pupil, wherein the spot covers a part of the test pattern and the scanning is carried out optically or mechanically according to a scanning pattern, and a processing unit arranged to generate a composite image of the collected pupil distribution by combining the pupil images. Metrology systems and methods are provided, which reduce diffraction errors by estimating, quantitatively, a functional dependency of measurement parameters on aperture sizes and deriving, from identified diffraction components of the functional dependency which relate to the aperture sizes, correction terms for the measurement parameters with respect to the measurement conditions.

    Self-moiré target design principles for measuring unresolved device-like pitches
    10.
    发明授权
    Self-moiré target design principles for measuring unresolved device-like pitches 有权

    公开(公告)号：US10101592B2

    公开(公告)日：2018-10-16

    申请号：US15829111

    申请日：2017-12-01

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Yuri Paskover ,  Daniel Kandel

    IPC: G02B27/60 ,  G01B11/02 ,  G01B11/25

    Abstract: Metrology targets and methods are provided, which provide self-Moiré measurements of unresolved target features, i.e., interaction of electromagnetic fields re-scattered off elements within a single target layer provides signals with Moiré pitches that are measurable, although the actual target pitches are unresolved and possibly device-like. Targets comprise cell(s) with interlaced lines of elements having different device-like pitches which are selected to yield resolved Moiré pitch(es). Different target designs are presented for scatterometry and imaging metrology measurements, as well as for critical dimension, dose and focus, and pitch walk measurements—of device-like targets.

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