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75 条记录 (耗时 0.022 秒)

    Junction field-effect quantum dot memory switch
    21.
    发明授权
    Junction field-effect quantum dot memory switch 有权
    交界场效应量子点存储开关

    公开(公告)号：US09246113B2

    公开(公告)日：2016-01-26

    申请号：US14181302

    申请日：2014-02-14

    申请人： International Business Machines Corporation

    发明人： Kevin K. Chan ,  Tze-Chiang Chen ,  Kailash Gopalakrishnan ,  Wilfried Ernst-August Haensch ,  Bahman Hekmatshoartabari

    IPC分类号： H01L29/76 ,  H01L51/05 ,  G11C11/40

    CPC分类号： H01L51/0562 ,  G11C11/40 ,  G11C16/0466 ,  G11C2216/06 ,  H01L29/78675 ,  H01L51/0541 ,  H01L51/0558

    摘要： A dense binary memory switch device combines the function of a pass transistor and a memory cell and has low programming and operation voltages. The device includes a charge storage region coupled to a gate electrode through a gate dielectric layer and directly contacting a channel region. The charge storage region contains quantum structures, deep traps or combinations thereof and is charged by carriers injected from injection regions that are in direct contact with the charge storage region. Fabrication of the device at low temperatures compatible with back-end-of-line processing is further disclosed.

    摘要翻译： 密集的二进制存储器开关器件结合了传输晶体管和存储单元的功能，并且具有低编程和操作电压。 该器件包括电荷存储区域，其通过栅极电介质层耦合到栅电极并直接接触沟道区域。 电荷存储区域包含量子结构，深陷阱或其组合，并且由与电荷存储区域直接接触的注入区域注入的载流子充电。 进一步公开了与后端处理相兼容的在低温下的器件的制造。

    Co-integration of elemental semiconductor devices and compound semiconductor devices
    24.
    发明授权
    Co-integration of elemental semiconductor devices and compound semiconductor devices 有权
    元素半导体器件和化合物半导体器件的协整

    公开(公告)号：US08841177B2

    公开(公告)日：2014-09-23

    申请号：US13677647

    申请日：2012-11-15

    申请人： International Business Machines Corporation

    发明人： Tze-Chiang Chen ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu

    IPC分类号： H01L21/20 ,  H01L21/46 ,  H01L21/8238 ,  H01L29/78 ,  H01L27/12 ,  C30B25/18 ,  H01L21/84 ,  H01L21/02 ,  H01L21/8258

    CPC分类号： H01L27/088 ,  C30B25/183 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/823807 ,  H01L21/823885 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/1266 ,  H01L29/16 ,  H01L29/20 ,  H01L29/78

    摘要： First and second template epitaxial semiconductor material portions including different semiconductor materials are formed within a dielectric template material layer on a single crystalline substrate. Heteroepitaxy is performed to form first and second epitaxial semiconductor portions on the first and second template epitaxial semiconductor material portions, respectively. At least one dielectric bonding material layer is deposited, and a handle substrate is bonded to the at least one dielectric bonding material layer. The single crystalline substrate, the dielectric template material layer, and the first and second template epitaxial semiconductor material portions are subsequently removed. Elemental semiconductor devices and compound semiconductor devices can be formed on the first and second semiconductor portions, which are embedded within the at least one dielectric bonding material layer on the handle substrate.

    摘要翻译： 包含不同半导体材料的第一和第二模板外延半导体材料部分形成在单晶衬底上的电介质模板材料层内。 进行杂交外延分别在第一和第二模板外延半导体材料部分上形成第一和第二外延半导体部分。 沉积至少一个介电接合材料层，并且把手基板结合到至少一个介电接合材料层。 随后去除单晶衬底，电介质模板材料层以及第一和第二模板外延半导体材料部分。 元件半导体器件和化合物半导体器件可以形成在第一和第二半导体部分上，第一半导体部件和第二半导体部件嵌入到处理基板上的至少一个介电接合材料层内。