公开(公告)号：US11903328B2

公开(公告)日：2024-02-13

申请号：US16784872

申请日：2020-02-07

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Richard Alan Haight ,  Martin O. Sandberg ,  Vivekananda P. Adiga

IPC: H10N60/01 ,  H10N60/80 ,  H10N60/12

CPC classification number: H10N60/0156 ,  H10N60/0912 ,  H10N60/12 ,  H10N60/805

Abstract: Devices, methods, and/or computer-implemented methods that can facilitate formation of a self assembled monolayer on a quantum device are provided. According to an embodiment, a device can comprise a qubit formed on a substrate. The device can further comprise a self assembled monolayer formed on the qubit.

公开(公告)号：US11437614B2

公开(公告)日：2022-09-06

申请号：US16707739

申请日：2019-12-09

Applicant: International Business Machines Corporation

Inventor： John Collins ,  Ali Afzali-Ardakani ,  Joel P. de Souza ,  Devendra K. Sadana

IPC: H01M4/36 ,  H01M4/38 ,  H01M4/587 ,  H01M4/62 ,  H01M10/0568 ,  H01M10/0569 ,  H01M10/052 ,  H01M10/0567

Abstract: An energy storage device is provided that includes a pre-lithiated silicon based anode and a carbon nanotube based cathode. The pre-lithiated silicon anode has a porous region and a non-porous region. The full cell energy storage device has high electrochemical performance which exhibits greater 200 rechargeable cycles with less than 25% after 10 charge discharge cycles relative to the first discharge cycle, a maximum specific discharge capacity greater than 300 mAh/g and a specific capacity of greater than 100 mAh/g for over 130 cycles. Such an energy storage device is scalable for a wide array of applications due to its wafer level processing and silicon-based substrate integrability.

公开(公告)号：US20210351169A1

公开(公告)日：2021-11-11

申请号：US16867695

申请日：2020-05-06

Applicant: International Business Machines Corporation

Inventor： Frank Robert Libsch ,  Ali Afzali-Ardakani ,  James B. Hannon

IPC: H01L25/16 ,  H01L23/538 ,  H01L23/66 ,  H01L23/00 ,  H01L23/367 ,  H01L33/62 ,  H01L33/64 ,  H01L33/48 ,  H01L33/58 ,  G11C16/04 ,  G02B6/42

Abstract: An interconnect for a semiconductor device includes: a carrier; a UV programmable chip mounted on the carrier using a first array of solder connections; a UV light source mounted on the carrier using a second array of solder connections, the UV light source being in optical communication with the UV programmable chip; and a plurality of transmission lines extending on or through the carrier and providing electrical communication between the UV programmable chip and the UV light source.

公开(公告)号：US20210175495A1

公开(公告)日：2021-06-10

申请号：US16707739

申请日：2019-12-09

Applicant: International Business Machines Corporation

Inventor： John Collins ,  Ali Afzali-Ardakani ,  Joel P. de Souza ,  Devendra K. Sadana

IPC: H01M4/36 ,  H01M4/38 ,  H01M4/587 ,  H01M4/62 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/0569 ,  H01M10/052

Abstract: An energy storage device is provided that includes a pre-lithiated silicon based anode and a carbon nanotube based cathode. The pre-lithiated silicon anode has a porous region and a non-porous region. The full cell energy storage device has high electrochemical performance which exhibits greater 200 rechargeable cycles with less than 25% after 10 charge discharge cycles relative to the first discharge cycle, a maximum specific discharge capacity greater than 300 mAh/g and a specific capacity of greater than 100 mAh/g for over 130 cycles. Such an energy storage device is scalable for a wide array of applications due to its wafer level processing and silicon-based substrate integrability.

公开(公告)号：US20210143309A1

公开(公告)日：2021-05-13

申请号：US16681295

申请日：2019-11-12

Applicant: International Business Machines Corporation

Inventor： Richard Alan Haight ,  Ali Afzali-Ardakani ,  Vivekananda P. Adiga ,  Martin O. Sandberg ,  Hanhee Paik

IPC: H01L39/02 ,  H01L39/22 ,  H01L39/24 ,  G06N10/00

Abstract: Techniques regarding encapsulating one or more superconducting devices of a quantum processor are provided. For example, one or more embodiments described herein can regard a method that can comprise depositing an adhesion layer onto a superconducting resonator and a silicon substrate that are comprised within a quantum processor. The superconducting resonator can be positioned on the silicon substrate. Also, the adhesion layer can comprise a chemical compound having a thiol functional group.

公开(公告)号：US11002730B2

公开(公告)日：2021-05-11

申请号：US15986960

申请日：2018-05-23

Applicant: International Business Machines Corporation

Inventor： Bharat Kumar ,  Sufi Zafar ,  Ali Afzali-Ardakani

IPC: B01J20/286 ,  G01N33/53 ,  G01N33/68 ,  G01N33/82 ,  G01N33/553 ,  G01N33/543 ,  C12N15/115 ,  G01N33/566

Abstract: The compositions described herein include a substrate, wherein the substrate is a metal, metal oxide, metal nitride or a silicon containing material; a self-assembled monolayer (SAM) bonded to the substrate, wherein the self-assembled monolayer comprises: a surface binding unit bonded to the substrate, wherein the surface binding unit is selected from the group consisting of hydroxamates, phosphonates, catechols, halosilanes, alkoxysilanes, phosphonic acids, alkenes, alkynes, alcohols, 1,2-diols, and thiols; a separator unit bonded to the surface binding unit; a mass altering unit bonded to the separator unit; and a detector unit bonded to the separator unit.

公开(公告)号：US20200335819A1

公开(公告)日：2020-10-22

申请号：US16389012

申请日：2019-04-19

Applicant: International Business Machines Corporation

Inventor： John Collins ,  Ali Afzali-Ardakani ,  Teodor K. Todorov ,  Joel P. de Souza ,  Devendra K. Sadana

IPC: H01M10/0565 ,  H01M4/134 ,  H01M4/38 ,  H01M10/0563 ,  H01C1/14 ,  H01C7/00 ,  H01C17/065

Abstract: A device such as, for example, an energy storage device or a micro-resistor, is disclosed which includes a silicon based electrode in which decreased interfacial resistance/impedance throughout the charge-mobile region of the device is provided. The decreased interfacial resistance/impedance is provided by forming an interfacial additive composite layer composed of a molten lithium containing salt layer and a layer of a Li-salt containing conductive polymeric adhesive material between the silicon based electrode and a solid polymer electrolyte layer. The presence of such an interfacial additive composite layer increases the ion and electron mobile dependent performances at the silicon based electrode interface due to significant decrease in the resistance/impedance that is observed at the respective interface as well as the impedance observed in the bulk of the device.

公开(公告)号：US10585063B2

公开(公告)日：2020-03-10

申请号：US16219208

申请日：2018-12-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ali Afzali-Ardakani ,  Karthik Balakrishnan ,  Stephen W. Bedell ,  Pouya Hashemi ,  Bahman Hekmatshoartabari ,  Alexander Reznicek

IPC: H01L29/417 ,  G01N27/414 ,  G01N27/30 ,  H01L29/06 ,  H01L29/20 ,  H01L29/16 ,  G01N27/327

Abstract: A method for making a hydrophobic biosensing device includes forming alternating layers over a top and sides of a fin on a dielectric layer to form a stack of layers. The stack of layers are planarized to expose the top of the fin. The fin and every other layer are removed to form a cathode group of fins and an anode group of fins. A hydrophobic surface on the two groups of fins.

公开(公告)号：US10578577B2

公开(公告)日：2020-03-03

申请号：US15635447

申请日：2017-06-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ali Afzali-Ardakani ,  Abram L. Falk ,  Bharat Kumar

IPC: G01N33/84 ,  G01N27/414 ,  H01L29/06 ,  H01L29/66 ,  G01N33/487

Abstract: Embodiments of the invention are directed to a solid-state zinc sensor. A non-limiting example of the sensor includes a semiconductor substrate. The sensor can also include an assembly surface on the semiconductor substrate. The sensor can also include a zinc detection monolayer chemically bound to the assembly surface. The sensor can also include a power supply electrically connected to the semiconductor substrate.

公开(公告)号：US20190288211A1

公开(公告)日：2019-09-19

申请号：US16425434

申请日：2019-05-29

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Bharat Kumar ,  George S. Tulevski

IPC: H01L51/00 ,  C01B32/158 ,  H01L51/05

Abstract: A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.