Abstract:
The display substrate may include a base substrate (1), a display structure (20) on a display area (B) of the base substrate (1), at least one blocking structure on a peripheral area around the display area (B) of the base substrate (1), and a first water-blocking layer (10) on the substrate (1). The first water-blocking layer (10) may cover the display structure (20) and the at least one blocking structure. The blocking structure may be configured to block cracks generated on the first water-blocking layer (10) at a side of the blocking structure opposite from the display area (B) from propagating to the display area (B).
Abstract:
The display substrate may include a base substrate (1), a display structure (20) on a display area (B) of the base substrate (1), at least one blocking structure on a peripheral area around the display area (B) of the base substrate (1), and a first water-blocking layer (10) on the substrate (1). The first water-blocking layer (10) may cover the display structure (20) and the at least one blocking structure. The blocking structure may be configured to block cracks generated on the first water-blocking layer (10) at a side of the blocking structure opposite from the display area (B) from propagating to the display area (B).
Abstract:
A vacuum adsorbing workbench and a vacuum adsorbing device are provided. The vacuum adsorbing workbench includes a workbench body, a first suction tube and an occluder. The workbench body is provided with multiple suction holes. Each suction hole is in communication with the first suction tube. The occluder is able to be connected with the first suction tube cooperatively to cut off communication between each suction hole and the first suction tube.
Abstract:
A transfer apparatus includes a supporting member, a free electron excitation device and a detection device; the free electrons excitation device is configured to excite semiconductor material of an object to be transferred to generate free electrons, and the detection device is configured to detect whether material of a surface of the transferred object in contact with the support surface of the supporting member is conductive under excitation by the free electron excitation device. A laser annealing apparatus comprising the transfer apparatus is further provided.
Abstract:
Embodiments of the disclosure disclose a transistor with floating gate electrode, a manufacturing method thereof, an application method thereof and a display driving circuit. The transistor with floating gate electrode includes a substrate (1), and a floating gate electrode (3), a source electrode (4), a drain electrode (5) and a control gate electrode (6) disposed on the substrate (1). The transistor with floating gate electrode further comprises a first insulating film (7) and a polysilicon film (8) that are sequentially disposed on the substrate (1), and a channel region (2) is formed in the polysilicon film (8) at a position corresponding to the floating gate electrode (3).
Abstract:
A display panel includes a plurality of driving base plates stacked, each of the driving base plates includes a substrate and a driving unit located on the substrate, orientations of the driving base plates are the same; a plurality of pixel units arranged in an array, each of the pixel units includes a plurality of sub-pixels, and orthographic projections on the substrate of light emitting regions of the sub-pixels in the same pixel unit do not overlap with each other; and each of the driving base plates is provided with at least one sub-pixel on one side away from the substrate, and the driving unit on each of the driving base plates is electrically connected to the at least one sub-pixel; and a quantity of the driving base plates is less than or equal to a quantity of the sub-pixels in one of the pixel units.
Abstract:
A vacuum adsorbing workbench and a vacuum adsorbing device are provided. The vacuum adsorbing workbench includes a workbench body, a first suction tube and an occluder. The workbench body is provided with multiple suction holes. Each suction hole is in communication with the first suction tube. The occluder is able to be connected with the first suction tube cooperatively to cut off communication between each suction hole and the first suction tube.
Abstract:
The embodiments of the invention disclose a device for film thickness measurement and a method for film thickness measurement. The device comprises a planar indenter, a collecting unit and a processing unit. The planar indenter comprises a base plate and a piezoelectric film layer. The collecting unit comprises a plurality of collecting circuits evenly distributed above the piezoelectric film layer and spaced from each other. The collecting circuits are used for collecting current signals generated when the piezoelectric film layer deforms at positions corresponding to the collecting circuits. The processing unit is used for calculating a film thickness of the film sample to be measured based on the current signals collected by each of the collecting circuits.
Abstract:
The present disclosure provides a silicon-based mask, a manufacturing method, and a display panel. The silicon-based mask includes a first silicon wafer and a second silicon wafer laminated one on another. The first silicon wafer includes a first via hole, the second silicon wafer includes a second via hole, an orthogonal projection of a wall of the first via hole onto the second silicon wafer surrounds the second via hole, and under a same etching condition, an etching rate of the second silicon wafer is smaller than an etching rate of the first silicon wafer.
Abstract:
An array substrate is provided. The array substrate includes a plurality of subpixels. A respective subpixel of the plurality of subpixels includes a first transistor. The first transistor includes a gate electrode; a first electrode on the gate electrode; a semiconductor material layer on a side of the first electrode away from the gate electrode; a second electrode on a side of the semiconductor material layer away from the first electrode; an organic layer on a side of the second electrode away from the semiconductor material layer; and a third electrode on a side of the organic layer away from the second electrode. An orthographic projection of the second electrode on a base substrate at least partially overlaps with an orthographic projection of the organic layer on the base substrate.